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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.GAAS

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Now showing 1 - 5 of 5
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    OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER
    (1991-07-15)
    LOONG, WA
    ;
    CHANG, HL
    ;
    交大名義發表
    ;
    應用化學系
    ;
    National Chiao Tung University
    The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300-degrees-C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.
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    PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
    (1994-04-01)
    HUANG, WC
    ;
    LEI, TF
    ;
    LEE, CL
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n=GaAs contact system. A value of 1.45 x 10(-6) OMEGA-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425-degrees-C for 90 s. It can withstand a thermal aging at 350-degrees-C for 40 h with its pc increasing to 2.94 x 10(-6) OMEGA-CM2 and for an aging at 410-degrees-C for 40 h with its p. increasing to 1.38 x 10(-5) OMEGA-cm2.
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    LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1994-08-01)
    CHEN, WK
    ;
    CHANG, CS
    ;
    CHEN, WC
    ;
    電子物理學系
    ;
    光電工程學系
    The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350-degrees-C in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425-degrees-C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1 X 10(-7) A/cm2, comparable to that of a normal GaAs Schottky diode.
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    PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
    (1994-12-01)
    CHANG, EY
    ;
    LIN, KC
    ;
    WU, JW
    ;
    CHEN, TH
    ;
    CHEN, JS
    Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET's after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET's passivated using ECR-CVD silicon nitride are also reported in this paper.
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    BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
    (1995-11-15)
    FENG, MS
    ;
    FANG, CSA
    ;
    CHEN, HD
    ;
    材料科學與工程學系
    ;
    電控工程研究所
    Photoluminescence characteristics of heavily carbon-, beryllium- and zinc-doped GaAs were studied in this investigation. The band-to-acceptor (e,A) transition was identified via various doping concentrations from 10(17) to 10(20) cm(-3) and the temperature from 20 to 300 K. As a result the (e,A) peak was found to be a dominant peak at 20 K instead of the band-to-band (B,B) peak at p> 1 x 10(19) cm(-3). The (e,A) peak was also observed at 300 K and enhanced with the increasing carrier concentration at p> 2.8 x 10(18) cm(-3). Bandgap shrinkage of these samples was qualitatively obtained. When p> 1 x 10(19) cm(-3), the impurity band merges with the valence band and the binding energy of the acceptor is equal to zero. Consequently, the bandgap can be taken as the energy between the conduction-band minimum and the top of the impurity band.