<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Subject: search.filters.subject.GaN HEMT

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
    (2017-02-01)
    Chou, Po-Chien
    ;
    Chen, Szu-Hao
    ;
    Hsieh, Ting-En
    ;
    Cheng, Stone
    ;
    del Alamo, Jesus A.
    This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: V-DS = 0 V, off, and off (cascode-connection) states. Changes of direct current (DC) figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk) and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments.
  • Thumbnail Image
    Item type:Item,
    Reliability improvement in GaN HEMT power device using a field plate approach
    (2017-07-01)
    Wu, Wen-Hao
    ;
    Lin, Yueh-Chin
    ;
    Chin, Ping-Chieh
    ;
    Hsu, Chia-Chieh
    ;
    Lee, Jin-Hwa
    This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach. (C) 2017 Elsevier Ltd. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
    (2016-07)
    Hsieh, Ting-En
    ;
    Lin, Yueh-Chin
    ;
    Chu, Chung-Ming
    ;
    Chuang, Yu-Lin
    ;
    Huang, Yu-Xiang
    In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400A degrees C. Thus, the Ti/Al/W ohmic and WN (X) Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.
  • Thumbnail Image
    Item type:Item,
    GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
    (2015-12-01)
    Hsieh, Ting-En
    ;
    Lin, Yueh-Chin
    ;
    Li, Fang-Ming
    ;
    Shi, Wang-Cheng
    ;
    Huang, Yu-Xiang
    A GaN high-electron-mobility transistor (HEMT) with WN (x) /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN (x) /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250A degrees C for 1 h. These results demonstrate that the WN (x) /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.
  • Thumbnail Image
    Item type:Item,
    次世代高效率電動車驅動與控制系統研究( II )
    (2010)
    成維華
    ;
    CHIENG WEI-HUA
    ;
    國立交通大學機械工程學系（所）