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16-GHz mHEMT Double-Quadrature Gilbert Down-Conversion Mixer With Polyphase Filters
(2013)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Su, Jen-Yi
;
Yu, Sheng-Wen
;
Huang, Guo-Wei
A 16-GHz double-quadrature very low IF down conversion mixer with polyphase filters is demonstrated using 0.15-nm metamorphic high electron mobility transistor (mHEMT) technology. Due to the hgih cut-off frequency of mHEMT device, the image rejection Gilbert mixer works at 16 GHz. The polyphase filters are employed to generate differential quadrature signals and eliminate the image signal at RF/LO stages and IF stage, respectively, in the double quarture configuration. When RF and LO frequencies are designed around 16 GHz and an IF frequency is 32 MHz, The double-quadrature Gilbert down-converter has 32-dB image rejection ratio, 1.7-dB conversion gain, -5-dBm IP1dB, and 5-dBm IIP3. The die size is 3.0 mm x 3.2 mm.
Broadband CMOS Gilbert Down-Converter Utilizing a Low-Loss Step-Impedance Rat-Race Coupler
(2009)
Wei, Hung-Ju
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
電信工程研究所
;
Institute of Communications Engineering
A Broadband Gilbert Down-Converter with step-impedance rat-race coupler is demonstrated using 0.13 mu m standard CMOS technology. The proposed method utilizes higher effective dielectric-constant, phase-inverter and step-impedance techniques simultaneously to make the rat-race coupler more compact (similar to 64% reduction) and phase-balanced over a wide operating bandwidth. The down-converter has NF of 16 dB and LO-to-RF isolation of better than 35 dB. The mixer core consumes 2.9 mA at V(dd)=1.8 V.
A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
A high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
(2005-06-01)
Wu, TH
;
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP(1 dB) of -9 dBm and OIP(3) of 4 dBm when input IF=0.3 GHz. LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than IS dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.9 X 0.9 mm(2) with 3 integrated on-chip inductors.
Compact 5.2-GHz GaInP/GaAs HBT gilbert upconverter using lumped rat-race hybrid and current combiner
(2005-10-01)
Meng, CC
;
Wu, TH
;
Lin, MC
;
電信工程研究所
;
Institute of Communications Engineering
A compact 5.2-GHz Gibert upconversion mixer is demonstrated using the 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) technology. A miniature lumped-element rat-race hybrid and an LC current combiner are used in the LO port and the RF port of the upconversion Gilbert mixer, respectively. The effect of the LC current combiner with inductor loss is established in this letter. An active IF balun is incorporated in. the Gilbert upconverter with no extra power consumption. The fully integrated Gilbert upconverter has conversion gain of 1 dB, OP (1 dB) of -10 dBm, and OIP3 of 2 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz.
A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
(2006-11-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
(2007)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
5.2/5.7-GHz 48-dB image rejection GaInP/GaAs HBT weaver down-converter using LO frequency quadrupler
(2006-11-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs heterojunction bipolar transistor (HBT) down-converter using the Weaver architecture is demonstrated in this paper. The Weaver system is a double-conversion image rejection heterodyne, system which requires no bandpass filters in the signal path and no quadrature networks. The Weaver down-converter has the image rejection ratios of 48 dB and 44 dB when the RF frequency is 5.2 GHz and 5.7 GHz, respectively. A new frequency quadrupler is employed in the down-converter to generate the local oscillator (LO) signals. The frequency quadrupler is designed to minimize the phase error when generating LO signals and thus the image rejection performance is improved. A diagrammatic explanation using the complex mixing technique to analyze the image rejection mechanism of the Weaver architecture is developed in this paper. From our analysis, the image rejection can be further improved by making the LO1 and LO2 signals coherent.
10-GHz SiGeBiCMOS sub-harmonic Gilbert mixer using the fully symmetrical and time-delay compensated LO cells
(2007-02-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 mu m SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates subharmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1dB of -20 dBm, and IIP3 Of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.

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