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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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快速與光電元件及毫微米結構之特性與可靠性研究
(1993)
施敏
;
交通大學電子研究所
由於本研究�已成功地成長出高品質的GaInP/ GaAs磊晶層,對於AlGaInP/GaAs的異質結構亦有深入的了解,另外,也研製出閘極長度為1um的HEMT結構及 GaAs/GaInP的DH雷射二極體,且得到相當不錯的特性.因此,本計畫將持續以前的研究工作,將對各種高速及光電元件(如HEMT, HBT, 和LD)探討其可靠性的問題,同時配合電腦模擬計算以期能改善元件的各種操作特性,如功率輸出大小,雜訊,及溫度效應等性質.同時也將利用有機金屬化學汽相磊晶技術( MOCVD),電子束微影技術(Electron Beam Lithography)及活性離子蝕刻技術(RIE)來研究量子效應(Quantum Effects )結構,並探討在次微米製程上遭遇到的各種問題. 本計畫主題包含下列五項:ぇ:選擇性區域磊晶成長(Selective Area Growth).え:活性離子蝕刻技術及傳統溶液蝕刻技術(Wet Etching)對次微米結構之影響.ぉ:量子效應結構之研究及相關效應之測量;包括: 量子線(Quantum Wire),量子盒(Quantum Box),及量子井線( Quantum Well Wire).�:超小面積之歐姆接觸及其在量子效應元件之應用.
2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area
(2014-01-01)
Lin, Bo-Rong
;
Tao, Nick G. M.
;
Lee, Chien-Ping
;
Henderson, Tim
;
Lin, Barry J. F.
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation
(2015-06-01)
Tao, Nick G. M.
;
Lin, Bo-Rong
;
Lee, Chien-Ping
;
Henderson, Tim
;
Lin, Barry J. F.
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant I-b and V-b modes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
氫效應在異質接面電晶體所引起的穩定性及可靠性問題
(2000)
李建平
;
LEE CHIEN-PING
;
交通大學電子工程系
異質接面雙載子電晶體結構之探討及其在高速無線電數據機之應用
(1996)
張俊彥
;
CHANG CHUN-YEN
;
國立交通大學電子工程學系
近年來,砷化鎵元件廣泛地使用在衛星及個人通訊上.即使是在高頻範圍下工作,它們仍可保有低雜訊及高輸出功率效率等優點.此計畫之目的在於開發砷化鎵為基材的異質接面雙載子電晶體 (HBT) 相關技術並研究其物理特性.進而將之運用在高速無線電數據之收發系統上. 由於傳統異質接面雙載子電晶體結構上所具有之位能突峰使得射一基極接面的啟動電壓與基集極面的啟動地壓不相同,此項缺點限制了傳統異質接面雙載子電晶體的特性.因此,一種異質射極雙載子電晶體(HEBT)和穿隧射極雙載子電晶體 (TEBT) 被使用去克服此項問題.在此計劃中運用.delta.- 摻雜技術去嘗試減少位能突峰的大小.藉由.delta.摻雜,可使得傳統HBT結構依舊能維持異質接面的優點並能減低位能突峰的影響, 且可增加價帶不連續之大小,以抑制電洞由基極流入射極的機會.除了直流特性外,高頻特性也是此計劃另一課題.因為.delta.- 摻雜技術同時也會增加射基極間電容之大小,故.delta.-摻雜之濃度及位置必須審慎設計以求最佳化之特性 .此計劃最後將運用前述HEBT,TEBT 及.delta.-摻雜改良後之HBT 元件,以混成方式製作一收發系統.
A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization
(2003-04-01)
Li, YM
;
Cho, YY
;
Wang, CS
;
Huang, KY
;
電子工程學系及電子研究所
In this paper, a computational intelligence technique is applied to extract and simulate the stationary and high-frequency properties of heterojunction bipolar transistors (HBTs). A set of HBT circuit equations formulated with the Gummel-Poon model in time domain is solved with (1) the waveform relaxation (WR), (2) monotone iterative (MI) method, and (3) genetic algorithm (GA) with floating-point operators. The coupled nonlinear equations are decoupled and solved with the WR and MI methods in time domain, and the results obtained are used for the optimization of the characteristics with the GA method. The iteration can be terminated when the final convergent global solution is obtained. The time domain result is used in analyzing the property of the output third-order intercept point (OIP3) with the fast Fourier transform (FFT). Compared with the SPICE result, our simulation results demonstrate that this method is accurate and stable in high frequency simulation. This approach has practical applications in HBT characterization and radio frequency (RF) circuit optimal design.
A novel numerical approach to heterojunction bipolar transistors circuit simulation
(2003-05-15)
Li, YM
;
Huang, KY
;
電子工程學系及電子研究所
;
友訊交大聯合研發中心
;
Department of Electronics Engineering and Institute of Electronics
In this paper we present a novel computational method for calculating the heterojunction bipolar transistor (HBT) physical characteristics in the time domain. To calculate the HBT high frequency properties, the Gummel-Poon equivalent circuit model is applied to replace the HBT in the circuit and a set of governing ordinary differential equations (ODEs) is formulated. We directly decouple the system ODEs and solve each decoupled ODE with the monotone iterative method in the time domain. This solution methodology proposed here has been applied to semiconductor device simulation by us earlier, and we find this method for the HBT simulation has good accuracy and converges globally. Compared with the HSPICE circuit simulator results, our results present the accuracy, efficiency, and robustness of the method. (C) 2002 Elsevier Science B.V. All rights reserved.
DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
(2004-03-20)
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
The realization of wideband amplifiers with shunt-series shunt-shunt dual-feedback configuration with commercially available 0.35-mum SiGe BiCMOS technology is reported. The SiGe HBT used here has f(t) of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt-series shunt-shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input- and output-return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1db and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage. (C) 2004 Wiley Periodicals, Inc.
DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
(2004-10-05)
Meng, CC
;
Wu, TH
;
Lu, SS
;
電信工程研究所
;
Institute of Communications Engineering
High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc.
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
(2004-10-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |S-11| is below -25 dB from DC to 10 GHz with power-conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-IdB is -4 dBm and IIP3 is 2.36 dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. (C) 2004 Wiley Periodicals, Inc.

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