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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.HfAlON

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Now showing 1 - 3 of 3
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    High work function IrxSi gates on HfAlON p-MOSFETs
    (2006-02-01)
    Wu, CH
    ;
    Yu, DS
    ;
    Chin, A
    ;
    Wang, SJ
    ;
    Li, MF
    We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.
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    HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
    (2006-06-01)
    Wu, CH
    ;
    Hung, BF
    ;
    Chin, A
    ;
    Wang, SJ
    ;
    Yen, FY
    The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
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    Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide
    (2008-01-01)
    Chen, Yung-Yu
    ;
    Fu, Wen-Yu
    ;
    Yeh, Ching-Fa
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    In this letter, the electrical properties of a HfAlON dielectric with UV-O-3 interfacial oxide were comprehensively studied and then compared with those of a HfAlON dielectric with interfacial chemical oxide. In the comparison of dielectric characteristics including leakage current density, transconductance, subthreshold swing, saturation drain current, effective electron mobility, and constant voltage stress reliabilities, the results clearly indicate that high-density interfacial UV-O-3 oxide is beneficial in reducing both bulk and interface traps as well as diminishing stress-induced trap generation, and possesses a high potential to be integrated with further high-k. dielectric applications.