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Subject: search.filters.subject.LTPS TFTs

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Now showing 1 - 5 of 5
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    Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
    (2020-05-01)
    Zheng, Yu-Zhe
    ;
    Huang, Shin-Ping
    ;
    Chen, Po-Hsun
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
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    Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors
    (2019-10-01)
    Huang, Shin-Ping
    ;
    Chen, Po-Hsun
    ;
    Chen, Hong-Chih
    ;
    Zheng, Yu-Zhe
    ;
    Chu, Ann-Kuo
    This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.
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    Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide
    (2016-12-01)
    Chen, Bo-Wei
    ;
    Chang, Ting-Chang
    ;
    Hung, Yu-Ju
    ;
    Huang, Shin-Ping
    ;
    Chen, Hua-Mao
    This letter investigates flexible polycrystalline silicon thin film transistor performance variation due to different buffer layer thicknesses. In flexible electronics, thermal expansion stress during device fabrication is inevitable. A thicker SiO2 buffer demonstrates better endurance to thermal expansion stress from the polyimide substrate during device annealing. However, if the SiO2 buffer thickness is above a critical point, its weak heat dissipation capability causes the optimal ELA crystallization condition to shift. A thermal expansion stress simulation and TEM photos were utilized to verify performance variation. Furthermore, a similar trend was observed in electrical characteristics after negative bias temperature instability.
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    Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors
    (2017-04-05)
    Chen, Bo-Wei
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Hung, Yu-Ju
    ;
    Huang, Shin-Pin
    The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing longterm mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.
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    Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
    (2016-08)
    Chen, Bo-Wei
    ;
    Chang, Ting-Chang
    ;
    Hung, Yu-Ju
    ;
    Huang, Shin-Ping
    ;
    Liao, Po-Yung
    This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size.