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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.Light-emitting diodes (LEDs)

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Now showing 1 - 5 of 5
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    Excellent Color Quality of White-Light-Emitting Diodes by Embedding Quantum Dots in Polymers Material
    (2016-01-01)
    Lin, Huang-Yu
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    Wang, Sheng-Wen
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    Lin, Chien-Chung
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    Chen, Kuo-Ju
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    Han, Hau-Vei
    This study employs the polyfluorene composite (called Green B) with several colors of quantum dots to generate the high-color-rendering index (CRI) white LEDs. The Green B polymer is a good candidate to manufacture the hybrid w-LED because of its good quantum efficacy. The hybrid w-LEDs are fabricated by the mixing of Green B with yellow quantum dots and red quantum dots or orange quantum dots to obtain the correlated color temperatures of 3500 and 5500 K. The use of the hybrid polymer/QDs w-LEDs is proved to be beneficial as QD w-LEDs can improve the CRI up to 90 in 3500 K. The luminous efficiency of such devices can be as high as 17.2l m/W.
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    Investigation of GaN-based light-emitting diodes using double photonic crystal patterns
    (2011-02-01)
    Huang, H. W.
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    Lai, Fang-I
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    Kuo, S. Y.
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    Huang, J. K.
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    Lee, K. Y.
    GaN-based LEDs with photonic crystal (PhC) patterns on an n- and a p-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the light output power of the GaN-based LED with PhC patterns on an n- and a p-GaN layer is enhanced by a factor of 1.30, and the wall-plug efficiency is increased by 24%. In addition, the higher output power of the LED with PhC patterns on the n- and p-GaN layer is due to better crystal quality on n-GaN and higher scattering effect on p-GaN surface using PhC pattern structure. (C) 2010 Elsevier Ltd. All rights reserved.
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    Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
    (2013-11-01)
    Lin, Bing-Cheng
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    Chen, Kuo-Ju
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    Han, Hau-Vei
    ;
    Lan, Yu-Pin
    ;
    Chiu, Ching-Hsueh
    InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be similar to 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.
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    The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes
    (2012-07-15)
    Chen, Kuo-Ju
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    Chen, Hsin-Chu
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    Shih, Min-Hsiung
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    Wang, Chao-Hsun
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    Kuo, Ming-Yen
    This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.
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    Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes
    (2011-11-15)
    Wang, Yu-Shou
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    Chen, Nai-Chuan
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    Lu, Chun-Yi
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    Chen, Jenn-Fang
    ;
    電子物理學系
    The optical joint densities of states of three InGaN/GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices. (C) 2011 Elsevier B.V. All rights reserved.