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Thermal decomposition of N2O near 900 K studied by FTIR spectrometry: Comparison of experimental and theoretical O(P-3) formation kinetics
(1970-01-01)
Pham, Tien, V
;
Tsay, T. J.
;
Lin, M. C.
;
交大名義發表
;
應用化學系
The spin-forbidden dissociation reaction of the N2O(X-1 sigma(+)) ground state has been investigated by both quantum calculations and experiments. Ab initio prediction at the CCSD(T)/CBS(TQ5)//CCSD(T)/aug-cc-pVTZ+d level of theory gave the crossing point (MSX) energy at 60.1 kcal/mol for the N2O(X-1 sigma(+)) -> N-2(X1 sigma g+) + O(P-3) transition, in good agreement with published data. The T- and P-dependent rate coefficients, k(1)(T,P), for the nonadiabatic thermal dissociation predicted by nonadiabatic Rice-Ramsperger-Kassel-Marcus (RRKM) calculations agree very well with literature data. The rate constants at the high- and low-pressure limits, k(1)(infinity) = 10(11.90) exp (-61.54 kcal mol(-1)/RT) s(-1) and k(1)(o) = 10(14.97) exp(-60.05 kcal mol(-1)/RT) cm(3) mol(-1) s(-1), for example, agree closely with the extrapolated results of Rohrig et al. at both pressure limits. The second-order rate constant (k(1)(o)) is also in excellent agreement with our result measured by FTIR spectrometry in the present study for the temperature range of 860-1023 K as well as with many existing high-temperature data obtained primarily by shock-wave heating up to 3340 K. Kinetic modeling of the NO product yields measured at long reaction times in the present work also allowed us to reliably estimate the rate constant for reaction (3), O + N2O -> N-2 + O-2, based on its strong competition with the NO formation from reaction (2) which has been better established. The modeled values of k(3) confirmed the previous finding by Davidson et al. with significantly smaller values of A-factor and activation energy than the accepted ones. A least-squares analysis of both sets of data gave k(3) = 10(12.22 +/- 0.04) exp[- (11.65 +/- 0.24 kcal mol(-1)/RT)] cm(3) mol(-1) s(-1), covering the wide temperature range of 988-3340 K.
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment
(2005-11-01)
Lu, WT
;
Chien, CH
;
Lan, WT
;
Lee, TC
;
Yang, MJ
In this work, we found that employing a post deposition N2O plasma treatment following the deposition of HfO2 film can effectively improve the electrical characteristics of p-type channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a HfO2 gate stack in terms of lower gate leakage current, lower interface state density, superior subthreshold swing, higher normalized transconductance and enhanced driving current even though it had led to a slightly higher equivalent oxide thickness (EOT) value of the HfO2 gate stack by around 0.3 nm. In order to clarify the attributes of the improvements, we used charge pumping (CP) measurement to analyze the densities of interface states and bulk traps in the HfO2 gate stacks. The improvements are then ascribed to the higher interface quality offered by the post deposition N2O plasma treatment. Moreover, we found that to more accurately estimate the bulk traps from the CP measurement, the leakage should be taken into account especially at low frequencies. Finally, it was found that the levels of the bulk traps and interface states can be reduced by the N2O plasma treatment, which also helps significantly eliminate the degradation of the gate stack during the subsequent voltage stress.
Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
(1998-10-01)
Lai, CS
;
Chao, TS
;
Lei, TF
;
Lee, CL
;
Huang, TY
A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
(1998-10-01)
Lai, CS
;
Chao, TS
;
Lei, TF
;
Lee, CL
;
Huang, TY
A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
(1999-12-01)
Chao, TS
;
Chang, SJ
;
Chien, CH
;
Lin, HC
;
Huang, TY
The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation.
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
(2001-02-01)
Pan, TM
;
Lei, TF
;
Yang, WL
;
Cheng, CM
;
Chao, TS
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
(2001-05-01)
Pan, TM
;
Lei, TF
;
Wen, HC
;
Chao, TS
;
電子工程學系及電子研究所
In this paper, we developed a new method to grow robust ultrathin oxynitride (E-OT = 18 Angstrom) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 with N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing, In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
Determination of ultrathin oxide thickness by subthreshold swing
(2002-05-01)
Cha, TS
;
電子物理學系
;
Department of Electrophysics
Thickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0-5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O-2.
Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
(2003-11-01)
Chao, TS
;
Chang, TH
;
電子物理學系
;
Department of Electrophysics
This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.
Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
(2004-11-01)
Yang, WL
;
Chao, TS
;
Lai, KH
;
電子物理學系
;
Department of Electrophysics
High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

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