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奈米WO3二極體之NH3冷媒感測研究
(2006)
趙書琦
;
Chao Shuchi
;
交通大學電子物理系
實驗發現，基於WO3－IrO2 薄膜結構的二極體，可以在未外加電解質的環境下正常工作，其整流特性和有電解質的元件比較，並不遜色。最近，實驗進一步發現，在低溫環境中（至-150oC）將微量NH3 氣體（~82 ppm）注入背景空氣中，該元件在正、反向偏壓下皆會有「低溫氣敏電性反應」產生，電流會呈現大幅度的變動。當IrO2 側被絕緣epoxy 覆蓋後，這種「氣敏電性反應」也會照常的發生，可見主要是WO3 之作用。首先，本計畫為符合當下「金屬氧化物」感測元件研究水準，擬以「反應性氣體沈積法」（reactive gas deposition），對WO3 薄膜進行奈米結晶化研究，並製作nc-WO3－IrO2 二極體（nc = nano-crystalline），以提昇其低溫NH3 氣體感度（至1 ppm 程度）和達到強化其他性能的目地。另外，本計畫擬以系統性更動製程的方式（鍍膜時間、反應性氣體沈積條件等），觀察nc-WO3 之厚度、結構、顆粒大小等變動，會與低溫NH3「氣敏反應」產生何種關連性，並據以強化nc-WO3－IrO2 薄膜的氣體感度（gas sensitivity）。另外，本計畫擬製作一批「最佳化」nc-WO3－IrO2 低溫NH3「氣敏二極體」，研究其IV 電性，包括氣體感度（ gas sensitivity）、操作溫度區間（ operating temperature）、濃度嚮應（dynamic range）、反應速度（switching time）、選擇性（ selectivity）、電雜訊特性（ noise）、可逆性（ reversibility）、再現性（reproducibility）、可靠性（reliability）、耐用性（durability）、和耗電性（power consumption）等IV 特性。
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
(2001-02-01)
Pan, TM
;
Lei, TF
;
Yang, WL
;
Cheng, CM
;
Chao, TS
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
(2001-05-01)
Pan, TM
;
Lei, TF
;
Wen, HC
;
Chao, TS
;
電子工程學系及電子研究所
In this paper, we developed a new method to grow robust ultrathin oxynitride (E-OT = 18 Angstrom) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 with N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing, In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
(2003-11-01)
Chao, TS
;
Chang, TH
;
電子物理學系
;
Department of Electrophysics
This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.
Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
(2004-11-01)
Yang, WL
;
Chao, TS
;
Lai, KH
;
電子物理學系
;
Department of Electrophysics
High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

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