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Design and implementation of smart manufacturing execution system in solar industry
(1970-01-01)
Qu, Wen
;
Cao, Wenliang
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Su, Y. -C.
;
交大名義發表
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National Chiao Tung University
The manufacturing industry, automatic production has been a crucial resource that cannot be replaced by labors. However, with the moving-abroad of manufactures and under the pressure of continuously reduce production cost, the core of production management in the manufacturing industry has lain in to increase the yield rate, lower unnecessary waste in production, and achieve excellent quality control. Smart Manufacturing Execution Systems (SMES) is now playing the role of integration. The major MESs in the present market all place the emphasis on semi-conductor, LCD panel, and modular assembling industries. The lack of identification numbers in the process of production disables the present solar cell industry to provide support and operate, and thus an MES for solar cell industry is in need.This research adopts the MES with LCD View, as the system model base. Based on the framework of prototyping constituted by information system, we proposed an SMES for solar cell industry, which is integrated with the present solar cell operation model and designed according to the framework of LCD View system.The solar cell SMES developed in this study can raise the personnel working efficiency in production and process analysis. The contribution of this study can real time analysis on quality abnormality, together with information on management, such as real time report on machine status, analysis on raw material, and production indices, the solar cell MES can facilitate production managers to make strategic decisions regarding production and improve the production as well as yield rate of products.
A path-finding toward high-efficiency penternary Cu(In,Ga)(Se,S)(2) thin film solar module
(2019-01-01)
Huang, Chien-Yao
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Parashar, Parag
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Chou, Hao-Ming
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Lin, Yi-Shivan
;
Lin, Albert
The optimal p-n junction structure in a state-of-the-art Cu(In,Ga)(Se,S)(2) thin-film solar module technology is investigated. For co-optimization design and path-finding, a TCAD model is developed with experimental samples. The engineerable parameters, i.e., F-Ga, GGI(avg), and CdS thickness, are demonstrated to play a critical role in determining the p-n junction properties such as dark current characteristics J(dark)(V), voltage-dependent photocurrent, localized carrier collection efficiency, and interface carrier transportation. We show the optimal Ga-grading is determined by a trade-off between the recombination loss in space charge region and the photo carrier collection in quasi-neutral region. The optimal CdS thickness is determined by a trade-off between carrier collection efficiency, short-circuit current (J(SC)) loss, and J(dark)(V), which depends on varied Ga-profiles. Overall, thin CdS (<= 10 nm) is preferred to reduce the J(SC) loss in accumulated Ga-profiles, while thicker CdS is preferred to enhance the carrier collection efficiency in flatter Ga-profiles. The band alignment effect on varied Cu(In,Ga)(Se,S)(2)/CdS junctions is also investigated. It is found sulfur-incorporation can suppress the V-OC saturation behavior at wide bandgap. For CIGSeS absorber with SS = 20% and D-p = 15%, the maximum V-OC of 780 mV can be achieved by co-optimized Ga-profile. Furthermore, varied Ga-profiles and CdS buffer layers are explored for pathfinding. An optimal p-n junction structure shows a relative + 40% efficiency improvement from 15.5% to 21.9%. This work shows the efficiency headroom of reported CIGSeS thin-film solar module technology through co-optimized CIGSeS composition gradient and buffer layer.
A Comprehensive Study of One-Step Selenization Process for Cu(In1-xGax) Se-2 Thin Film Solar Cells
(2017-03-21)
Chen, Shih-Chen
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Wang, Sheng-Wen
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Kuo, Shou-Yi
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Juang, Jenh-Yih
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Lee, Po-Tsung
In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-xGaxSe2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.
A promising sputtering route for dense Cu2ZnSnS4 absorber films and their photovoltaic performance
(2014-09-01)
Jheng, Bao-Tang
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Liu, Po-Tsun
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Wu, Meng-Chyi
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光電工程學系
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顯示科技研究所
Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is highly abundant in nature. It is an important absorber material for the development of low-cost and sustainable next-generation I-2-II-IV-VI4 thin-film solar cells because it has a the tunable direct band gap energy, inexpensive constituent elements, and a large absorption coefficient in the visible wavelength region. This work develops an efficient one-step vacuum-based approach to depositing CZTS films without the need to supply excess sulfur during/after deposition or to perform any post-sulfurization treatment. This one-step RF sputtering process produces CZTS films that are crystalline, phase-pure, dense, smooth, and continuous. Air Mass 1.5 G power conversion efficiencies of as high as 6% have been achieved with an antireflection coating, demonstrating that this new approach has great potential as a low-cost alternative for high-efficiency CZTS solar cell production. (C) 2014 Elsevier B.V. All rights reserved.
Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
(2018-08-30)
Liao, Shun Sing
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Chuang, Chuan Lung
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Lin, Yueh Chin
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Dee, Chang Fu
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Majlis, Burhanuddin Yeop
In this study, we show that the efficiency and carrier life time of multi-crystalline silicon solar cells were significantly improved by using a low pressure (20,000 Pa) and temperature (650 degrees C similar to 750 degrees C) environment grown thermal oxide (TO) as the surface passivation layer. In this experiment, during the first stage, the oxidation process was done at 650 degrees C and a lower pressure of 20,000 Pa for 2 mins under the flow a gas mixture of N-2/O-2 in ratio of 2:1. In the second stage, a temperature of 750 degrees C was used at the same pressure for the post-growth annealing process under a pure N-2 ambient for 25 mins. Consequently, conversion efficiency was significantly increased by 0.55% with the surface passivation layer grown by low pressure and temperature TO process. The sheet resistance, carrier lifetime, internal quantum efficiency (IQE), increased by 6.32 Omega/sq., 22.18 mu s, 4.33%, respectively, and the average reflection was reduced of 0.62%. Thus, the low pressure and temperature thermal oxidation process was an efficient way to increase the efficiency of the multi-crystalline silicon solar cells.
Boron-doping effect on the super-high density Si quantum dot thin films utilizing a gradient Si-rich oxide multilayer structure
(2019-05-01)
Huang, Pin-Ruei
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Chen, You-Cheng
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Kuo, Kuang-Yang
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Lee, Po-Tsung
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光電工程學系
Boron (B)-doped gradient Si-rich oxide multilayer (GSRO-ML) structure is utilized to realize super-high density Si quantum dots (QDs) thin films with large carrier tunneling probability by co-sputtering. The B-doping effect on crystalline, optical, electrical and photovoltaic (PV) properties of Si QD thin films is investigated in this study. With increased B-doping concentration, the preserved high crystallinity of Si QDs and the reduced optical bandgap are observed. An optimized doping condition is found for the electrical and PV properties. Further increasing the doping concentration leads to increased inactive B atoms and interfacial over-diffusion. The issue of interfacial over-diffusion can be efficiently improved by inserting lowly B-doped GSRO-ML thin films. Our results show the feasibility and great potential for high efficiency Si-based solar cells integrating Si QDs by properly doped B atoms in GSRO-ML thin film structure.
Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation Layer
(2017-01-01)
Tsai, Yi-Chia
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Lee, Ming-Yi
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Li, Yiming
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Samukawa, Seiji
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電信工程研究所
By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)! silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (A1203-QDSL) passivation layer shows the high short-circuit current (J,) of 4.77 mA/cm(2) in theoretical, which agrees with the J, of 4.75 mA/cm(2) obtained in the experiment under an AM1.5 and one sun illumination. Moreover, the reduction of efficiency in an ultra-dense QD configuration can be ameliorated by exploiting the Al2O3 passivation layer. As the result, a high conversion efficiency of 16.3% is optimized by using the QD geometry from experiment and an inter-dot spacing of 0.3 nm.
Using pre-distorted PAM-4 signal and parallel resistance circuit to enhance the passive solar cell based visible light communication
(2018-01-15)
Wang, Hao-Yu
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Wu, Jhao-Ting
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Chow, Chi-Wai
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Liu, Yang
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Yeh, Chien-Hung
Using solar cell (or photovoltaic cell) for visible light communication (VLC) is attractive. Apart from acting as a VLC receiver (Rx), the solar cell can provide energy harvesting. This can be used in self-powered smart devices, particularly in the emerging "Internet of Things (IoT)'' networks. Here, we propose and demonstrate for the first time using pre-distortion pulse-amplitude-modulation (PAM)-4 signal and parallel resistance circuit to enhance the transmission performance of solar cell Rx based VLC. Pre-distortion is a simple non-adaptive equalization technique that can significantly mitigate the slow charging and discharging of the solar cell. The equivalent circuit model of the solar cell and the operation of using parallel resistance to increase the bandwidth of the solar cell are discussed. By using the proposed schemes, the experimental results show that the data rate of the solar cell Rx based VLC can increase from 20 kbit/s to 1.25 Mbit/s (about 60 times) with the bit error-rate (BER) satisfying the 7% forward error correction (FEC) limit. (C) 2017 Elsevier B.V. All rights reserved.
Applying Dielectrophoresis on Silver Nanowires Alignment and Assembly to Enhance the Efficiency of Plasmonic Silicon Solar Cells
(2015-09-01)
Lin, Ching-Chang
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Wang, Szu-Yu
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Lin, Wei-Ling
;
Lin, Ya-Lin
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Cheng, Chieh
The enhancement effects for solar cell are examined on the plasmonic properties of Ag nanowires (AgNWs) arrays, which fabricated by dielectrophoresis techniques. AgNWs in 100 nm diameters with aspect ratio (AR) of 100 were assembled into an array between the micrometer spaced electrodes by applying an AC electric field. The simulating results show that the array AgNWs can enhance the localized surface electric field on the silicon surface efficiently. Since, the incident lights can be scattered and trapped in the silicon layers which improves the enhancement of the external quantum efficiency. The optimized result of alignment of AgNWs average angle are 89.17 degree to the electrode edges and 21.98 degree of standard deviation under 100 Vpp, 250 kHz. In addition, the reflectance is 18.4% lower than those without AgNWs ones. The optimized plasmonic solar cells increase efficiency from 7.78% to 8.72%.
Comparison of nano-structured solar cell anti-reflection coating based on graded-index or mode coupling approach
(2014-11-01)
Lin, Albert
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Zhong, Yan-Kai
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Fu, Sze-Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Solar cell nano-structured anti-reflection coatings based on graded index (GI) and mode coupling are all proposed to significantly reduce the reflection from semiconductor-air interface. In this work, it is shown that purely graded index approach can lead to degradation of long wavelength absorption by eliminating quasi-guided mode excitation. The reason is that the physically graded layer not only provides low reflectance path from air to semiconductor, but also from semiconductor to air, leading to photon escape. This results in out-coupling of photons from the semiconductor to air. On the other hand, anti-reflection coating based on mode coupling does not suffer from degraded long wavelength absorption and it is capable of acting as one-way photon pass coating. It is found that the sidewall thickness of mode coupling anti-reflection coating has significant impact on its effectiveness for antireflection, and therefore the selection of process methods is critical for its low reflectance. It is proposed that the purely graded index coating is more suitable for wafer-based photovoltaics where full absorption is possible by two photon traces. The mode coupling coating is suitable for both wafer-based photovoltaics and thin-film photovoltaics since it provides not only low reflectance but also long wavelength quasi-guided mode excitations. In the end, new types of anti-reflection coating and light trapping structure are proposed to further enhance the performance. (C) 2014 Elsevier B.V. All rights reserved.

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