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Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors
(2020-09-01)
Lin, Chih-Chih
;
Tai, Mao-Chou
;
Chang, Ting-Chang
;
Tsao, Yu-Ching
;
Wang, Yu-Xuan
In this work, an abnormal lowering of subthreshold swing (SS) after self-heating stress in a device with thick channel is observed. A model of interface defect shielding is proposed, based on electron trapping at the channel/gate insulator interface. The phenomenon is discussed systematically through the band diagram and extractions of the field effective mobility. Results suggest that a depletion region appears after electron trapping at the front channel, which then prevents the carriers from reaching the interface defects. Therefore, an abnormal superior electrical performance after stress is observed. Finally, a dual gate amorphous InGaZnO (a-IGZO) thin film transistor (TFT) is used to clarify the phenomenon. Results from different top gate bias voltage confirms the bulk accumulation and better gate control.
Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
(2020-08-01)
Huang, Shin-Ping
;
Chen, Hong-Chih
;
Chen, Po-Hsun
;
Zheng, Yu-Zhe
;
Chu, Ann-Kuo
The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will induce higher protrusion height in the interface between the poly-silicon and gate insulator (GI). This surface morphology leads to serious charge trapping into the GI layers; in contrast, the smallest degradation after SHS can be seen in the devices with the lowest protrusion height. This indicates that the degradation is caused by the surface morphology between the poly-Si and GI interface. In addition, the COMSOL simulation results confirm that the large electric field in the GI layer appears in the rough surface morphology devices; therefore, choosing the appropriate ELA energy of the poly-Si is beneficial for the applications of the driving TFT in organic light-emitting diode (OLED) display in the manufacturing industry.
Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
(2020-05-01)
Zheng, Yu-Zhe
;
Huang, Shin-Ping
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Chen, Po-Hsun
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Chang, Ting-Chang
;
Tsai, Tsung-Ming
This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
Analysis of Negative Bias Temperature Instability Degradation in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors of Different Grain Sizes
(2019-11-01)
Tu, Hong-Yi
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Tsao, Yu-Ching
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Tai, Mao-Chou
;
Chang, Ting-Chang
;
Tsai, Yu-Lin
This letter investigates degradation after negative bias temperature instability (NBTI) stress applied to LTPS TFTs with different polycrystalline-silicon grain sizes. The initial characteristics of the LTPS TFTs are similar regardless of grain size; however, we observed a different degree of degradation after NBTI depending on grain size. In general, after NBTI, both grain boundary traps and interface traps were generated. We found that the degree of NBTI degradation is dominated by the concentration of grain boundary traps, which themselves are a result of the different grain sizes that occur due to excimer laser annealing energy. At initial, dangling bonds in the grain boundaries and at the interface are passivated by hydrogen atoms, hence the initial characteristics are similar. Since the large grain of poly-Si initially generates more dangling bonds in the grain boundaries, after NBTI, hydrogen depassivation generates more grain boundary traps and causes much more serious degradation in device performance.
Abnormal C-V Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs
(2019-11-01)
Huang, Shin-Ping
;
Chen, Po-Hsun
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Tsao, Yu-Ching
;
Chen, Hong-Chih
;
Zheng, Yu-Zhe
We investigate the abnormal current-voltage (C-V) hump effect of p-type low-temperature polysilicon (LTPS) thin-film transistors (TFTs) which have undergone high current operations. Experimental results indicate localized electron trapping in the gate insulator (GI), which is carried out near the drain. The ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) enhancement is due to the reduction of effective length, and the OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) decrease as the electron tunneling path distance increases. These can be observed after hot carrier stress in current characteristics. The C-V measurements demonstrate that the threshold voltage ( ${V}_{\text {th}}$ ) shift is associated with the gate length. In addition, capacitance-voltage measurements also show that this localized trapping region remains the same in length, regardless of channel length. Hence, a model is proposed to explain how the electric field, which is gate length-dependent, affects the source side of the device, and then lowers the source barrier height. This leads to bulk leakage, which causes the subthreshold swing degradation at device scale down.
Online gaming motive profiles in late adolescence and the related longitudinal development of stress, depression, and problematic internet use
(2019-07-01)
Chang, Shan-mei
;
Lin, Sunny S. J.
;
教育研究所
;
Institute of Education
Many studies have shown that some game motives help to identify the risk for the development of problematic Internet use, especially advancement, escapism and socializing. Previous researchers have investigated multiple risky motives in each study but treated them as individual variables with less concern about their interplay. However, in many studies, the results showed that all gaming motives were correlated, implying the possibility that garners might endorse multiple motives simultaneously. This study thus adopted a person-centered approach that was capable of distinguishing people with apparent combinations of gaming motives. The first aim of this study was to examine the co-occurrence of three different gaming motives, using latent profile analysis. The second aim of this study was to examine whether there were differences among gamer profiles in their characteristics, problematic Internet use, depression, and other well-being indicators across five time points. Panel data were collected from the same college student sample every six months for 2 years, from 2012 to 2014. At time point 1, a total of 387 freshmen (female = 109; male = 278) were recruited in Taiwan. Four reliable clusters of garners were identified: high-engagement, medium-engagement, low-engagement, and healthy engagement. The validated analysis results showed that the high-engagement garners were risky and had higher depression and problematic Internet use scores than the other gamer clusters from time 1 to time 5. Academic performances had no significant effect on the 4 gamer clusters from time 1 to time 5. When the high-engagement cluster was compared to the healthy-engagement cluster, the major difference was seen in the level of escapism motives and the consequent risk of developing negative psychological symptoms. However, when the healthy-engagement cluster was compared to the low-engagement cluster, there were no significant differences in their level of escapism motive or psychological outcomes in depression and problematic Internet use (PIU) scores. Taken together, these findings imply that the endorsement of the escapism motive might be a risky inner factor for depression, PIU, and other well-being indicators in college garners. Based on our findings, the person-centered study may provide further insights to help garners with functional impairment. In addition, intervention programs can be designed to bring awareness to gamers' own escapism motives and to persuade them to face the pressures and problems in real life.
Dry lubrication of friction on ferroelectric BiFeO3 film
(2018-11-01)
Yang, Chunbin
;
Xiao, Shuyu
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Yang, Jan-Chi
;
Lu, Xiaomei
;
Chu, Ying-Hao
Epitaxial BiFeO3 film shows excellent ferroelectric properties, which is not only studied extensively in magnetoelectric modulation but also shows good tribological performance. In our experiment, we find that the surface of BiFeO3 film can be more lubricant with the application of bias voltages or stress through the AFM probe with a reduction (up to similar to 40%) of the friction between the sample and the probe tip. Based on the Prandtl-Tomlinson model, the mechanism of the dry lubrication on BiFeO3 film originates from the reduction of van der Waals force between sample surface and probe tip. The findings here could be advantageously used in promoting the performance and durability of Micro/Nano Electromechanical devices based on ferroelectric thin films.
Understanding turnover intention in cross-country business management
(2017-01-01)
Lin, Chieh-Peng
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Tsai, Yuan-Hui
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Mahatma, Ferdinandus
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經營管理研究所
;
Institute of Business and Management
Purpose - To deepen our understanding about the development of turnover intention, the purpose of this paper is to develop a conceptual model based on the stress theory to explain cross-country differences in the formation of turnover intention, complementing previous literature that mainly emphasizes the effect of monetary compensation on turnover intention without taking into account anxiety and pressure. Design/methodology/approach - Empirical testing of this model by investigating personnel across Taiwan's and Indonesia's banks confirms the applicability of stress theory in cross-cultural business management. Of the 161 Chinese-language questionnaires distributed to the employees from the three large banks in Taiwan, 137 usable questionnaires were returned for a response rate of 85 percent. At the same time, of the 234 Indonesian-language questionnaires distributed to the employees from the two large banks in Indonesia, 219 usable questionnaires were returned for a response rate of 93.6 percent. Findings - This research reveals that mental disengagement fully mediates the indirect relationship between performance-related anxiety and turnover intention, while positive reinterpretation fully mediates the indirect relationship between work pressure and turnover intention. Furthermore, the effects of performance-related anxiety and work pressure on turnover intention are moderated by cross-country differences. Originality/value - First, the finding concerning the full mediating role of mental disengagement complements prior justifications of the conservation of resources theory. Second, the finding of this study regarding the full mediating role of positive reinterpretation complements the previous findings of Taylor's (1983) theory of cognitive adaptation, which conceptualizes employees as active agents in restoring the psychological equilibrium in the aftermath of a competitive pressurized event.
Stress, Sleep and Depressive Symptoms in Active Duty Military Personnel
(2016-08)
Chou, Han-Wei
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Tzeng, Wen-Chii
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Chou, Yu-Ching
;
Yeh, Hui-Wen
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Chang, Hsin-An
Background: The military is a unique occupational group and, because of this, military personnel face different kinds of stress than civilian populations. Sleep problems are an example. The purpose of this study was to investigate the relationship between sleep problems, depression level and coping strategies among military personnel. Materials and Methods: In this cross-sectional study, military personnel completed the Beck Depression Inventory, the Pittsburgh Sleep Quality Index and the Jalowiec Coping Scale. Results: An evaluation of the test scores showed that officers had better sleep quality and fewer depressive symptoms than enlisted personnel. Military personnel with higher educational levels and less physical illness also had fewer depressive symptoms. Officers and noncommissioned officers preferred problem-focused strategies. Those with higher Beck Depression Inventory and Pittsburgh Sleep Quality Index scores and those who drank alcohol frequently preferred affective-focused strategies. conclusions: Our results revealed that sleep quality, physical illness and alcohol consumption were associated with the mental health of military personnel. Treating these factors may improve the mental health of military personnel and enhance effective coping strategies.
Homoepitaxial growth and stress analysis of (111) diamond film with embedded gold islands
(2015-08-01)
Chiu, Kim-An
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Wu, Ping-Hsun
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Peng, Chun-Yen
;
Tian, Jr-Sheng
;
Chang, Li
The internal stress in high-quality (111) homoepitaxial diamond film grown on high-pressure high temperature (HPHT) synthesized single crystal diamond substrate by chemical vapor deposition (CVD) can be reduced effectively by embedding Au islands in diamond. Au islands formed from an Au layer deposited on the diamond substrate by electron beam evaporation can be obtained after hydrogen plasma annealing. Transmission electron microscopy and X-ray diffraction results show that the Au islands covered with CVD diamond have a size in a few hundreds of nanometers and are oriented with diamond in the orientation relationship of {111}Au//{111}(Dia) and < 110 > Au//< 110 > Dia. The surfaces of the CVD diamond films grown on substrate with and without Au coating exhibit cracks when the film thickness reaches 3.5 mu m. As evaluated from the Raman peak shift, it is shown that the internal tensile stress in the film with Au islands is less than in the same thick film on substrate without Au coating. A crack-free (111) homoepitaxial diamond film in the same thickness can be obtained by insertion of multilayers of Au islands in CVD diamond. (c) 2015 Elsevier Ltd. All rights reserved.

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