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Subject: search.filters.subject.T-shaped gate

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    Novel I-line phase shift mask technique for submicron T-shaped gate formation
    (2002-07-01)
    Chen, SH
    ;
    Chang, HC
    ;
    Fu, DK
    ;
    Chang, EY
    ;
    Lai, YL
    A novel submicron (<0.2 mum) T-shaped gate technology using a phase shift mask (PSM) technique is developed. The 8% half-tone PSM was selected for the definition of the isolated narrow space. Before lithography, a 2000 Angstrom SiN film was deposited on the wafer. After i-line PSM exposure and reactive ion etching (RIE) of the silicon nitride film, openings less than 0.2 mum wide were formed on the SiN film. To further reduce the dimensions of the openings, an additional 566 Angstrom nitride was then deposited on the wafer and etched back using RIE without any mask. An opening of 0.167 mum was formed on the wafer after the dry etching process. The wafer was then coated with another layer of photoresist to form a lift-off structure. The T-shaped gate with a length of 0.167 mum was obtained using this technique. The novel T-shaped gate technology is a high-throughput process for both silicon and compound semiconductor devices.
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    High-Efficiency AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using a Sub-Micron Deep-UV T-Shaped Gate Technology
    (2000)
    Lai, Yeong-Lin
    ;
    Chang, Edward Yi
    ;
    Lee, Di-Houng
    ;
    Chen, Szu-Hung
    ;
    材料科學與工程學系
    A class-B AlGaAs/InGaAs/GaAs pseudomorphic power high-electron-mobility transistor (HEMT) with high power performance has been developed. A simple fabrication method of a sub-micron T-shaped gate using the deep-UV lithography technology with tri-layer photoresists is presented for improvement of efficiency and gain of a pseudomorphic power HEMT. The AlGaAs/InGaAs/GaAs multinary compound material structure of the HEMT was grown by the molecular-beam epitaxy (MBE). The HEMT with a gate width of 3.36 mm and a gate length of 0.5 mu m exhibits a transconductance of 383 mS/mm. The saturation drain-to-source current (IDss) is 265 mA/mm. At an operation frequency of 1.9 GHz, the device demonstrates a power-added efficiency (PAE) of 65% at a drain bias of 1.2 V and a quiescent drain current of 30 mA (3.37% I-DSS). The state-of-the-art power characteristics are, for the first time, achieved by the AlGaAs/InGaAs/GaAs pseudomorphic power HEMT using a sub-micron deep-UV T-shaped gate technology.
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    A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
    (1996-12-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Yang, HPD
    ;
    Nakamura, K
    A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-mu m-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.