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Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N-2 and H-2 atmospheres
(2009-03-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Lan, Shan-Ming
;
Huang, Yen-Chin
;
Liao, Sen-Mao
This work examines possible luminescence mechanisms of silicon-rich nitride (SRN) films that were fabricated by atmospheric pressure chemical vapor deposition (APCVD). Under an ambient gas of either H-2 or N-2, two SRN films were deposited using the same precursors of Si and N. While photoluminescence (PL) measurements of both as-deposited specimens revealed an intense luminescence band (1.8-3.8 eV), which was observable by the naked eye, a detailed examination of the high energy band of the PL spectra over 2.8 eV yielded different results for those samples that were fabricated in different ambiences. To determine the reason for these differences, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy were conducted, suggesting unique chemical bonds and elemental ratio of nitrogen to silicon in SRN films. Further analysis involving plan-view high-resolution transmission electron microscopic observations of SRN films demonstrated the embedding of Si quantum dots (Si QDs), but with some differences depending on the deposition environment. Analyses of the results obtained suggest that the emission from SRN films that were deposited by APCVD is not only dominated by the quantum confinement effect of Si QDs, but also subordinately affected by the surface states around these Si QDs.
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
(2010-01-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Yang-Dong
;
Lin, Chao-Cheng
In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO2 about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO3:H2O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO2 film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO2, a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO2 layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
(2010-01-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Huang, Yu-Hao
;
Lin, Chao-Cheng
We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2 dielectric layer. Moreover, related reliability characteristics have been extracted.
Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
(2010-01-01)
Chang, Chih-Chieh
;
Pan, Fu-Ming
;
Chen, Ching-Wen
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This study performs surface reduction treatments, including hydrogen plasma treatment and rapid thermal anneal (RTA) in hydrogen ambient, to reduce the nitrogen content in the surface layer of the TaNx ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly beta-TaNx, is formed on the PE-ALD TaNx thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated TaNx thin film significantly improves the adhesion of the TaNx film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated TaNx thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD TaNx thin film can sustain the thermal anneal at 600 degrees C, the one on the as-deposited TaNx thin film exhibits voiding even at a temperature as low as 400 degrees C.
Effect of Cu-Ion Concentration in Concentrated H3PO4 Electrolyte on Cu Electrochemical Mechanical Planarization
(2010-01-01)
Kung, Te-Ming
;
Liu, Chuan-Pu
;
Chang, Shih-Chieh
;
Chen, Kei-Wei
;
Wang, Ying-Lang
The influence of Cu-ion concentration in a concentrated H3PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/cm(2) when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu(OH)(2) is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/[Cu(OH)(2)+CuO] in the Cu 2p(3/2) X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3425807] All rights reserved.
Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
(2010-05-31)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Yao-Feng
;
Chang, Ting-Chang
;
Wang, Shin-Yuan
In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
(2010-07-26)
Trinh, H. D.
;
Chang, E. Y.
;
Wu, P. W.
;
Wong, Y. Y.
;
Chang, C. T.
The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
(2011-12-26)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Syu, Yong-En
;
Wang, Chia-C.
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
(2008-12-01)
Lin, Chao-Cheng
;
Chang, Ting-
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Feng, Li-Wen
An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.

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