<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Subject: search.filters.subject.X-ray scattering

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow
    (2015-09-01)
    Huang, Jheng-Ming
    ;
    Ku, Ching-Shun
    ;
    Lin, Chih-Ming
    ;
    Chen, San-Yuan
    ;
    Lee, Hsin-Yi
    In situ aluminum-doped ZnO (AZO) films were grown on glass substrates by atomic layer deposition (AID) with an interrupted flow at temperatures in range 200-280 degrees C; the optimal temperature, 260 degrees C, depended on the electrical properties. To assess the effect of the ratio of pulses of diethylzinc (DEZn) and trimethylaluminium (TMA) on the structural, optical and electrical properties, we grew AZO films with various pulse ratios of DEZn:TMA in a range from 3:1 to 10:1 at 260 degrees C. These properties and the content of Al were investigated with X-ray diffraction, X-ray reflectivity (XRR), a high-resolution transmission electron microscope (HRTEM), a secondary-ion mass spectrometer (SIMS), transmission spectra, Hall measurements and X-ray photoelectron spectra (XPS). The electrical resistivity was least, 5.7 x 10(-4) Omega cm, for ALD-AZO films with pulse ratio 6:1; the carrier mobility was 8.80 cm(2) V-1 s(-1) and optical transmittance up to 94%. The epitaxial AZO films grown in situ also on m-plane sapphire exhibited the two-fold symmetry of ZnO (110) in the orthorhombic crystal system. All results show that a novel in situ doping method with an interrupted flow controls the Al content of AZO films more easily, and is more usefully applicable for a structure with a large aspect ratio for an advanced photoelectric device. (C) 2015 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    X-ray scattering study of crystallization behavior in homoepitaxial growth of SrTiO3 films
    (2002-10-15)
    Lee, HY
    ;
    Chang, WD
    ;
    Hsu, CH
    ;
    Liang, KS
    ;
    Lee, JY
    X-ray reflectivity and grazing incidence crystal truncation rod (CTR) measurements were employed to characterize the microstructure and crystallization behavior of homoepitaxial SrTiO3 (STO) films deposited on polished SrTiO3 (0 0 1) substrates by pulse laser deposition technique. X-ray scattering results indicate that room temperature grown STO film has a density approximately 11.1% lower than that of bulk STO and shows poor epitaxial relation with the substrate. Subsequent annealing at 760 degreesC for 20 s appeared to transform the film into two-layer structure, with the density of the layer right above the substrate approaching to its bulk value, while the density of the top 15.5 Angstrom thick layer reducing to near 45% of bulk STO. The annealing process also leads to an increase of lateral lattice constant together with the growth of domain size. The appearance of interference fringes of the CTR after annealing, which is also observed at the film grown at 760 degreesC, clearly demonstrates the development of epitaxy upon short time annealing. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Fabrication and ferroelectric properties of BiFeO3/LaNiO3 artificial superlattice structures grown by radio-frequency magnetron-sputtering
    (2013-02-01)
    Liu, Yen-Ting
    ;
    Chiu, Shang-Jui
    ;
    Lee, Hsin-Yi
    ;
    Chen, San-Yuan
    ;
    材料科學與工程學系
    Symmetric superlattice structures of multiferroic BiFeO3 and conductive LaNiO3 sublayers were grown on a Nb-doped SrTiO3 substrate with radio-frequency magnetron-sputtering. The formation of a superlattice structure was confirmed from the appearance of satellite lines on both sides of the main line in the X-ray diffraction pattern. X-ray measurements show that these superlattice films become subject to greater tensile stress along the c-axis and to increased compressive stress parallel to the surface plane with a decreasing thickness of the sublayer. The smaller is the thickness of the sublayer, the greater is the crystalline quality and the strain state. The hysteresis loops show a large leakage current at frequencies of 0.5 and 1 kHz; the polarization decreases with an increasing frequency. (C) 2012 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Composition determination of semiconductor quantum wires by X-ray scattering
    (2005-02-28)
    Hsu, CH
    ;
    Tang, MT
    ;
    Lee, HY
    ;
    Huang, CM
    ;
    Liang, KS
    Self-assembled semiconductor nano-structures, e.g. quantum dots and wires, have recently attracted intensive interests due to their potential applications in optoelectronic industry. Strain field, compositional profile, size, and shape are the key factors determining the physical properties of these nano-structures. However, due to their mesoscopic size, it is a challenge to accurately determine those geometric and chemical parameters. In this work, we present the structural and compositional investigation of GaAs quantum wires grown on InP(0 0 1) substrates by grazing incidence X-ray scattering. In particular, we applied resonant X-ray scattering to determine the compositional distribution within the wires. With properly chosen diffraction peak and X-ray energy range, the profile of energy scan is highly sensitive to the composition of the region with selected lattice constant. As compared to other composition determination methods, which rely on the intensity ratio either between a strong and a weak diffraction or between the same Bragg diffraction collected at different energies, the profile of energy scan is not affected by the significant intensity modulation introduced by inter-wire correlation. Therefore, this method can be applied to systems of various surface morphologies and ordered structures and still provides compositional information with high accuracy and good resolution. (C) 2004 Elsevier B.V. All rights reserved.