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Subject: search.filters.subject.amorphous silicon

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Now showing 1 - 10 of 15
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    A novel thin-film transistor with vertical offset structure
    (1997-04-01)
    Lin, CW
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability.
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    Item type:Item,
    The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
    (1997-10-01)
    Cheng, HC
    ;
    Tsai, JW
    ;
    Huang, CY
    ;
    Luo, FC
    ;
    Tuan, HC
    The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.
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    Item type:Item,
    Electroless plating with Pd induced crystallization of amorphous silicon thin films
    (2002-11-01)
    Hu, GR
    ;
    Wu, YCS
    ;
    Chao, CW
    ;
    Huang, TJ
    ;
    材料科學與工程學系
    A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.
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    Item type:Item,
    Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films
    (2003-06-26)
    Lin, YD
    ;
    Wu, YS
    ;
    Chao, CW
    ;
    Hu, GR
    ;
    材料科學與工程學系
    Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.
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    Item type:Item,
    Improved annealing process for electroless Pd plating induced crystallization of amorphous silicon
    (2003-08-01)
    Hu, GR
    ;
    Huang, TJ
    ;
    Wu, YS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Electroless Pd plating induced crystallization of amorphous silicon (a-Si) thin films has been proposed for fabricating low-temperature polycrystalline silicon thin film transistors (LTPS TFTs). However, the current crystallization process often leads to poor device performance due to the large amount of I'd-silicide residues in the poly-Si thin films. It was found that the amount of I'd silicide increased with annealing time and temperature. In this study, a two-step annealing process was developed to obtain the appropriate amount of Pd silicide for inducing the crystallization of a-Si. The device characteristics were significantly improved by this two-step process.
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    Wafer bonding by Ni-induced crystallization of amorphous silicon
    (2003-09-01)
    Chao, CP
    ;
    Wu, YCS
    ;
    Lee, TL
    ;
    Wang, YH
    ;
    材料科學與工程學系
    Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC.
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    Low cost high-efficiency high-density-plasma Silicon-based thin film solar cells with high light-soaking stability
    (2012)
    Hsiao, T. H.
    ;
    Shieh, J. M.
    ;
    Yu, P. C.
    ;
    Shen, C. H.
    ;
    Kao, M. H.
    We investigate the performance of a single-junction amorphous Si (a-Si) and a-Si/a-Si tandem solar cells fabricated with Inductively Coupled Plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density. We demonstrate single-junction a-Si solar cells and a-Si/a-Si tandem solar cell with a conversion efficiency of 9.6% and 8.8%, respectively. Highly light-soaking stable high-density plasma-fabricated a-Si and a-Si/a-Si solar cells were demonstrated with photo-induced degradation in conversion-efficiency as low as 7% and 5%, respectively.
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    Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon
    (2005-10-01)
    Hou, CY
    ;
    Wu, YCS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi(2), precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi(2) precipitates, and (3) the subsequent migration of NiSi(2) precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress oil the growth of NILC. It was found that tensile stress did not enhance NiSi(2) formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.
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    Item type:Item,
    Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures
    (2006-09-01)
    Lin, You-Da
    ;
    Wu, Yewchung Sermon
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Effects of oxygen in Ni films on. the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.
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    Electrical Properties of Metal-Silicon Nitride-Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
    (2008-12-01)
    Hsieh, Ming-Ta
    ;
    Chen, Jenn-Fang
    ;
    Yen, Kuo-Hsi
    ;
    Zan, Hsiao-Wen
    ;
    Chang, Chan-Ching
    Detailed admittance spectroscopy was performed on a metal-silicon nitride-hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under various operating conditions (accumulation, depletion and full depletion) are presented along with an alternative direct measurement method at room temperature. Admittance spectroscopy shows that the interface states density between silicon nitride (SiN(x)) and a-Si:H can be determined from the depletion equivalent circuit model. The resisivity and activation energy of a-Si:H can also be obtained using the accumulation and depletion equivalent circuit models. These models can be employed easily to monitor the fabrication parameters of thin-films transistors (TFTs) and to accurately and directly obtain the capacitance model parameters of TFTs. [DOI: 10.1143/JJAP.47.8714]