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Subject: search.filters.subject.antenna effect

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Now showing 1 - 5 of 5
  • Thumbnail Image
    Item type:Item,
    Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
    (1998-10-01)
    Lai, CS
    ;
    Chao, TS
    ;
    Lei, TF
    ;
    Lee, CL
    ;
    Huang, TY
    A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
  • Thumbnail Image
    Item type:Item,
    Characterization of antenna effect by nondestructive gate current measurement
    (1996-08-15)
    Lin, HC
    ;
    Chien, CH
    ;
    Huang, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.
  • Thumbnail Image
    Item type:Item,
    Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
    (1998-10-01)
    Lai, CS
    ;
    Chao, TS
    ;
    Lei, TF
    ;
    Lee, CL
    ;
    Huang, TY
    A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
  • Thumbnail Image
    Item type:Item,
    Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-N-channel metal-oxide-semiconductor field-effect transistors
    (2002-07-01)
    Chen, SJ
    ;
    Chung, SSS
    ;
    Lin, HC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Plasma etching of poly-silicon in a metal-oxide-semiconductor field-effect transistor (MOSFET) during the gate definition process induces edge damage at the gate-drain overlap edge. This edge damage will be further enhanced by the antenna effect and cause a more serious hot-carrier (HC) effect, particularly in short-channel devices. We call this phenomenon the plasma-charging-enhanced HC effect. In this paper, this plasma-charging-enhanced HC effect is evaluated by the charge pumping (CP) profiling technique, in which the enhanced damage at the gate-drain overlap gate oxide region can be identified. A three-phase plasma damage mechanism is then proposed to explain the observed effect. According to experimental results, it was shown that the interface traps generated at the gate-drain overlap edge are mainly attributed to the plasma-charging-enhanced HC effect. These interface traps (Nit) become the dominant mechanism of the drain current (ID) degradation, which increases with a reducing channel length (L). Again, the enhanced HC-effect-induced-degradation will dominate the device reliability under long-term operations.
  • Thumbnail Image
    Item type:Item,
    Characterization of antenna effect by nondestructive gate current measurement
    (1996-08-15)
    Lin, HC
    ;
    Chien, CH
    ;
    Huang, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.