學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 17

A Wide Impedance Bandwidth Printed Slot Antenna for 28, 38, and 60-GHz Applications
(2018-01-01)
Chi, Pei-Ling
;
Wang, Ching-Hsiang
;
電機工程學系
;
Department of Electrical and Computer Engineering
A printed slot antenna with 10-dB impedance bandwidth from 22.44 GHz to > 67 GHz is presented. The proposed antenna is basically an elliptical slot antenna fed by a microstrip line on the backside of the substrate. To increase the bandwidth, particularly, a parasitic patch loaded by a cross shaped slot was non-concentrically placed into the elliptical slot and an open-circuited stub was properly added to the feed line. Experimental results show that the fabricated antenna achieves a ratio bandwidth of > 2.99:1 for VSWR <= 2 and at lower frequencies of the bandwidth it exhibits dipole-like radiation patterns with the peak gain of 8.4 dBi. The proposed antenna is suited to future 5G wireless communications at 28 GHz, 38 GHz, and 60 GHz.
Broadband Omnidirectional Light Trapping in Gold-Decorated ZnO Nanopillar Arrays
(2017-04-05)
Chang, Yuan-Ming
;
Lin, Man-Ling
;
Lai, Tung-Yen
;
Chen, Chang-Hung
;
Lee, Hsin-Yi
The photoluminescence (PL) and reflectivity characteristics of zinc oxide nanopillars- (ZnO-NPs) grown on indium tin oxide (ITO)-coated glasses were investigated. The room temperature PL showed bright -white -light emission for the undoped ZnO-NPs grown at 600 degrees C, suggesting the close relation between the optical characteristic and "the growth conditions being, carried out for,obtaining the present ZnO-NPs. The reflectivity of the as -grown ZnO-NPs array was about, similar to 29% with the wavelength of the incident light ranging from 200 to 1800 nm. Nevertheless, the reflectance reduced significantly to less than 9.9% when a layer of gold (Au) was deposited on ZnO=NPg by sputtering for 5 min, corresponding to more than 65% reduction in Au -coated ZnQ-NPs (Au/ZnO-NPs). Moreover, the angle -resolved reflectance measurement's on the present Au/ZnO-NPs array show an omnidirectional light -trapping characteristic. These remarkable characteristics, broadband and omnidirectional light -trapping -of Ati/ZnO-NPs, are attributed to the extended effective optical path of the incident light due to subwavelength scattering resulting,from the presence of Au nanoparticics.
Broadband Multifunctional Plasmonic Logic Gates
(2018-07-04)
Sang, Yungang
;
Wu, Xiaojia
;
Raja, Soniya S.
;
Wang, Chun-Yuan
;
Li, Haozhi
Plasmonic logic gates provide a promising platform to realize diffraction-unlimited all-optical logic circuits. However, previous plasmonic logic gates suffer from narrow bandwidth and high loss. Here, broadband plasmonic logic gates are proposed and demonstrated using a unique design based on curved silver gratings. These logic gates can maintain a high intensity contrast ratio (29 dB) under front optical illumination. And, the broadband feature is achieved due to the feature of zero optical path difference from different positions of the curved grating to the output port. All the seven fundamental logic gates are demonstrated. In addition, different types of logic gates can be realized using the same device configuration. The possibility of multifunctionality makes these logic gates easy for device fabrication and system integration.
A Low-Cost Broadband Bondwire Interconnect for THz Heterogeneous System Integration
(2015)
Li, Chun-Hsing
;
Lai, Chih-Wei
;
Yan, Tzu-Chao
;
Kuo, Chien-Nan
;
電機工程學系
A low-cost broadband bondwire interconnect is proposed for THz heterogeneous system integration. A transversal path composed of two transmission lines and a bondwire is introduced to effectively reduce the bondwire effect of an original signal path consisted of a single bondwire only. Simulation results indicate that the return loss and insertion loss can be better than 15 dB and 2.3 dB from dc to 456 GHz, respectively. Measured interconnect loss is around 0 dB to 1.5 dB from 320 to 340 GHz.
Broadband cholesteric liquid crystal devices with poly(N-vinyl carbazole) microstructures
(2015-01-02)
Hu, Jia-Wei
;
Chen, Tai-An
;
Jeng, Shie-Chang
;
光電系統研究所
;
影像與生醫光電研究所
The particular thermally induced phase separation (TIPS) method was developed by using poly(N-vinyl carbazole) (PVK) dissolved in liquid crystal (LC) layer recently. Permanent scattering is produced via the particular TIPS due to the formation of poly-domain LCs. In this work, we applied the particular TIPS to a conventional cholesteric LC (CLC) device. A broadband CLC device with a poly-domain structure was demonstrated by using the particular TIPS of CLC and PVK. The CLC device fabricated by two indium tin oxide glass substrates coated with PVK films generated the rough PVK layers and microstructures when the device was cooled from a temperature higher than the clear point of CLCs. The produced poly-domain planar texture of CLCs still preserved the bistability. A high cooling rate and PVK concentration both increased the reflection bandwidth of the CLC devices.
A Low-Cost DC-to-84-GHz Broadband Bondwire Interconnect for SoP Heterogeneous System Integration
(2013-12-01)
Li, Chun-Hsing
;
Ko, Chun-Lin
;
Kuo, Chien-Nan
;
Kuo, Ming-Ching
;
Chang, Da-Chiang
A low-cost broadband bondwire interconnect is proposed for heterogeneous system integration. Transmission lines are incorporated with bondwires to form a two-path structure, which can effectively reduce the bondwire effect. Theoretical analysis is provided using a graphical method and it shows that the interconnect can give widest operation bandwidth from dc up to a maximum frequency f(max) if the length of the transmission lines is designed at an optimal electrical length theta(max) . In particular, theta(max) only depends on the characteristic impedance of the transmission lines. The achievable f(max) is limited by the bondwire inductance, i.e., smaller bondwire inductance is preferred to have wider operation bandwidth. An interconnect from a 0.18-mu m CMOS chip to a glass-integrated-passive-device carrier is designed to verify the proposed concept. Measured results show that the insertion loss and the return loss can be better than 3.0 and 13.4 dB, respectively, from dc to 84 GHz. The proposed interconnect shows around 3.2 times bandwidth of a single bondwire alone. To the best of authors' knowledge, this work demonstrates the bondwire interconnect with the widest operation bandwidth for heterogeneous system integration by using system-on-package reported thus far.
A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects
(2005)
Guo, JC
;
Tan, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new T-model is developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L(omega), Re(Z(in)(omega)), and Q(omega) proves the proposed T-model. Besides the broadband feature, scalability is justified by the good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20GHz can improve RF circuit simulation accuracy demanded by broadband design.
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2006)
Guo, J. C.
;
Tan, T. Y.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond resonance. A new scheme of RLC networks is deployed for spiral coils and substrate to account for 3D eddy current, substrate return path, and spiral coil to substrate coupling effects, etc. The 3D eddy current is identified as the key element essential to accurately simulate broadband characteristics. EM simulation using ADS momentum is conducted to predict the on-chip inductor performance corresponding to wide range of substrate resistivities (rho(Si)=0.05 similar to 1K Omega-cm). Three operation modes such as TEM, slow-wave, and eddy current are reproduced. The model parameters manifest themselves physics-base through relevant correlation with rho(Si) over three operation modes. The onset of slow-wave mode can be consistently explained by a key element (R-P) introduced in our model, which accounts for the conductor loss due to eddy current arising from magnetic field coupling through substrate return path. This broadband and scalable model is useful for RF circuit simulation. Besides, it can facilitate optimization design of on-chip inductors through physics-based model parameters relevant to varying substrate resistivities.
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2006-01-01)
Guo, J. C.
;
Tan, T. Y.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond resonance. A new scheme of RLC networks is deployed for spiral coils and substrate to account for 3D eddy current, substrate return path, and spiral coil to substrate coupling effects, etc. The 3D eddy current is identified as the key element essential to accurately simulate broadband characteristics. EAI simulation using ADS momentum is conducted to predict the on-chip inductor performance corresponding to wide range of substrate resistivities (rho(Si)=0.05 similar to 1K Omega-cm). Three operation modes such as TEM, slow-wave, and eddy current are reproduced. The model parameters manifest themselves physics-base through relevant correlation with psi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element (R-p) introduced in our model, which accounts for the conductor loss due to eddy current arising from magnetic field coupling through substrate return path. This broadband and scalable model is useful for RF circuit simulation. Besides, it can facilitate optimization design of on-chip inductors through physics-based model parameters relevant to varying substrate resistivities.
3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching
(2006-01-01)
Fu, Chang-Tsung
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A 1.5V, 3 similar to 11GRz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6mW.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results