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Surface Treatments on the Characteristics of Metal-Oxide Semiconductor Capacitors
(2019-01-01)
Horng, Ray-Hua
;
Tseng, Ming-Chun
;
Wuu, Dong-Sing
;
交大名義發表
;
電子工程學系及電子研究所
The properties of metal-oxide semiconductor (MOS) capacitors with different chemical treatments have been examined in this study. A MOS capacitor consists of an Al2O3/n-GaN/AlN buffer/Si substrate. Four chemical treatments, containing organic solvents, oxygen plasma and BCl3 plasma, dilute acidic and alkali solvents, and hydrofluoric acid, were used to reduce the metal ions, native oxides, and organic contaminants. The n-GaN surface was treated with these chemical treatments before Al2O3 was grown on the treated n-GaN surface to reduce the interface state trap density (D-it). The value of D-it was calculated using the capacitance-voltage curve at 1 MHz. The D-it of a u-GaN surface was modified using various solutions, which further influenced the contact properties of GaN.
Nano assembly of N-doped graphene quantum dots anchored Fe3O4/halloysite nanotubes for high performance supercapacitor
(2017-08-10)
Ganganboina, Akhilesh Babu
;
Chowdhury, Ankan Dutta
;
Doong, Ruey-an
;
環境工程研究所
;
Institute of Environmental Engineering
The development of robust and low cost electrode materials with superior electrochemical properties has been a subject of focus on energy storage devices. Herein, the development of N-doped graphene quantum dots (N-GQDs) deposited on Fe3O4-halloysite nanotubes (Fe3O4-HNTs) as active anode materials has been established for supercapacitor applications. The Fe3O4 nanoparticles synthesised by coprecipitation have been in-situ deposited on HNT surfaces following by the coating of (3-aminopropyl)-triexthoxysilane to anchor 4-10 nm N-GQDs via the formation of amide linkage. The N-GQD@Fe3O4-HNTs exhibits a high specific capacitance of 418 F g(-1) and maintains good rate capability in neutral electrolyte solutions. In addition, the anode materials show excellent electrochemical performance with energy and power densities of 10.4-29 W h kg(-1) and 0.25-5.2 kW kg(-1), respectively. Such excellent electrochemical features can be attributed to the synergistic contribution from individual components. The Fe3O4-HNTs provide 1-dimensional matrix to shorten the diffusion path of electrons and electrolyte ions as well as to absorb the mechanical stress during cycling along with excess sites for charge storage, while N-GQDs offer abundantly accessible electroactive sites for rapid electrons and electrolyte ions transport as well as enhance electrical conductivity of Fe3O4-HNTs. Results obtained in this study clearly demonstrate that metal oxide-HNTs are promising support to anchor N-GQDs nanomaterials as the high performance anode materials for next generation of energy storage devices with high energy and power densities. (C) 2017 Elsevier Ltd. All rights reserved.
Rugged surface polycrystalline silicon film formed by rapid thermal chemical vapor deposition for dynamic random access memory stacked capacitor application
(1998-06-01)
Lin, M
;
Chang, CY
;
Huang, TY
;
Kuo, UJ
;
電子工程學系及電子研究所
Polycrystalline silicon films with a rugged surface (rugged poly-Si), deposited by a single-wafer rapid thermal chemical vapor deposition (RTCVD) system suitable for 12 inch wafer fabrication, are studied and the films have been successfully applied to bottom storage electrodes for stacked capacitors in dynamic random access memory cells. Our data show that the rugged poly-Si is actually formed by the nucleation generation on the amorphous silicon surface and subsequent crystalline growth during the annealing step following deposition. We also determined that a wide temperature window exists for the formation of rugged poly-Si (i.e., +/- 15 degrees C) using RTCVD, which is wider than that using low pressure chemical vapor deposition (LPCVD) (i.e., +/-3 degrees C) and ultra high vacuum chemical vapor deposition (UHVCVD) (i.e., +/-10 degrees C). Stacked capacitors fabricated using rugged poly-Si and thin silicon oxide/silicon nitride dielectric film show that for a rugged poly-Si storage electrode with a 60 nm top-layer and 645 degrees C annealing, an effective surface area of approximately 2.9 times that of a conventional poly-Si film electrode is obtained.
Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application
(1999-04-01)
Lin, M
;
Chang, CY
;
Huang, TY
;
Shieh, WY
;
電子工程學系及電子研究所
In this paper we describe the electrical and physical characterizations of Ta2O5 films on rapid thermal nitrided (RTN) rugged polycrystalline silicon electrodes for 256 M dynamic random access memory (DRAM) application. To overcome the higher leakage on Ta2O5 films with rugged poly-Si bottom electrodes, we have successfully employed a light oxidation on rugged poly-Si grains for improving the acute angle of surface morphology, and a post-treatment with rapid thermal nitridation of N2O on Ta2O5 films to reduce the leakage. In addition, a RTN pre-treatment is also applied to prevent rugged poly-Si oxidation during a Ta2O5 film deposition that compromises the effective Ta2O5 thickness. Our results show that Ta2O5 film with an effective thickness of 1.4 nm (physical thickness=10 nm) and a low leakage current density of less than 1 X 10(-8) A/cm(2), suitable for 256 M DRAM application, can be achieved. Our results also show that while a light oxidation on rugged poly-Si grains could improve the acute angle between the rugged poly-Si and its congruent amorphous silicon sub-layer, over oxidation on rugged poly-Si grains could degrade the leakage current and the time dependent dielectric breakdown (TDDB) characteristics of the stacked capacitor.
A novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processes
(1999-07-01)
Chen, MJ
;
Hou, CS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The inter-poly-oxide (IPO) capacitor is one of the main elements in present mixed-mode CMOS process technologies, However, the phenomenon of poly depletion causes a significant change in the measured capacitance with applied voltage, This effect, expressed in terms of the voltage coefficient of capacitance (VCC), can seriously deteriorate analog precision. In this letter, a novel cross-coupled scheme is proposed for the IPO capacitors. The resulting VCC has a very low measured value of 2 ppm/V in a 0.35-mu m standard mixed-mode CMOS process, achieved without any unconventional approaches.
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
High-density MIM canpacitors using AlTaOx dielectrics
(2003-05-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Li, MF
The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
(2003-10-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Cho, BJ
Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.
Very high density RF MIM capacitor compatible with VLSI
(2005)
Chiang, KC
;
Lai, CH
;
Chin, A
;
Kao, HL
;
McAlister, SP
We have fabricated RF MIM capacitors, using high-kappa TiTAO as the dielectric, which show a record high density of 20 fF/mu m(2). In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pA and a high Q of 120. This was for a typical large 8 pF TiTaO MINI capacitor. The small voltage dependence of the capacitance (Delta C/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.
A novel program-erasable high-(K) A1N-Si MIS capacitor
(2005-03-01)
Lai, CH
;
Chin, A
;
Hung, BF
;
Cheng, CF
;
Yoo, WJ
We demonstrate a programmable-erasable MIS capacitor with a single layer high-kappa AIN dielectric on Si having a high capacitance density of 5 fF/mum(2). It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AION, or other known high-kappa dielectric capacitors, where the threshold voltage (T h) shifts continuously with voltage. This device exhibits good data retention with a V-th change of only 0.06 V after 10 000 s.

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