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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Subject: search.filters.subject.carrier transport

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Now showing 1 - 4 of 4
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    Effect of Metal Ions on Hybrid Graphite-Diamond Nanowire Growth: Conductivity Measurements from a Single Nanowire Device
    (2019-03-11)
    Shellaiah, Muthaiah
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    Chen, Ying-Chou
    ;
    Simon, Turibius
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    Li, Liang-Chen
    ;
    Sun, Kien Wen
    Novel Cd2+ ions mediated reproducible hybrid graphite-diamond nanowire (G-DNWs; Cd2+-NDS1 NW) growth from 4-Amino-5-phenyl-4H-1,2,4-triazole-3-thiol (S1) functionalized diamond nanoparticles (NDS1) via supramolecular assembly is reported and demonstrated through TEM and AFM images. FTIR, EDX and XPS studies reveal the supramolecular coordination between functional units of NDS1 and Cd2+ ions towards NWs growth. Investigations of XPS, XRD and Raman data show the covering of graphite sheath over DNWs. Moreover, HR-TEM studies on Cd2+-NDS1 NW confirm the coexistence of less perfect sp(2) graphite layer and sp(3) diamond carbon along with impurity channels and flatten surface morphology. Possible mechanisms behind the G-DNWs growth are proposed and clarified. Subsequently, conductivity of the as-grown G-DNWs is determined through the fabrication of a single Cd2+-NDS1 NW device, in which the G-DNW portion L2 demonstrates a better conductivity of 2.31 x 10(-4) mS/cm. In addition, we investigate the temperature-dependent carrier transport mechanisms and the corresponding activation energy in details. Finally, comparisons in electrical resistivities with other carbon-based materials are made to validate the importance of our conductivity measurements.
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    Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes
    (2017-07-01)
    Zhang, Zi-Hui
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    Chen, Sung-Wen Huang
    ;
    Zhang, Yonghui
    ;
    Li, Luping
    ;
    Wang, Sheng-Wen
    In this report, we propose to enhance the hole injection efficiency by adjusting the barrier height of the p-type electron blocking layer (p-EBL) for similar to 273 nm deep ultraviolet light-emitting diodes (DUV LEDs). The barrier height for the p-EBL is modified by employing a p-Al0.60Ga0.40N/Al0.50Ga0.50N/p-Al0.60Ga0.40N structure, in which the very thin Al0.50Ga0.50N layer is able to achieve a high local hole concentration, which is very effective in reducing the effective barrier height of the p-EBL for holes. More importantly, besides the thermionic emission, such a p-EBL structure can also favor a strong intraband tunneling process for holes. As a result, we can obtain a more efficient hole injection into the quantum wells, leading to a remarkably improved optical power for the DUV LED with the proposed p-EBL architecture.
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    次32奈米多重閘極元件的特性分析與模式建立---變異性與微縮性，高頻類比特性，以及介觀現象的探討
    (2008)
    蘇彬
    ;
    Su Pin
    ;
    國立交通大學電子工程學系及電子研究所
    在這個計畫中我們對次32 奈米多重閘極SOI CMOS 的元件特性作深入探討 及模型建立。在工作項目一中，我們將建立一個適用於不同buried oxide 厚度的 多重閘極SOI 元件的理論架構，我們的理論計算將涵蓋量子力學及原子等級的 效應。我們的模型可用來預測次32 奈米多重閘極SOI 元件的電性變異及其可微 縮性，將有助於多重閘極元件的設計。在工作項目二中，我們將綜合探討採用不 同製程模組的多重閘極SOI 元件的高頻及類比特性。本研究可用來初步評估多 重閘極SOI CMOS 技術在高頻及類比應用的發展潛力。在工作項目三中，我們 將探討極小尺寸多重閘極元件的介觀現象。本研究對於瞭解次32 奈米多重閘極 SOI 電晶體的載子傳輸特性十分重要。
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    前瞻矽奈米元件變異性及傳輸特性綜合研究(I)
    (2009)
    蘇彬
    ;
    Su Pin
    ;
    國立交通大學電子工程學系及電子研究所
    在此研究計畫中，我們將對以矽為基底的前瞻奈米元件，針對其變異性及載 子傳輸特性，進行綜合研究。在工作項目一中，我們將分別對超薄基體(UTB)， 多閘極(multi-gate)以及gate-all-around 奈米線金氧半場效電晶體，建立一套 包含Poisson 及Schrodinger 方程式之解的理論架構。利用這一套可考慮量子效 應的解析解模型，我們將研究這三種元件結構並搭配不同的通道材料，其對製程 變異的敏感度。我們的元件模型也將有助於未來奈米級元件的設計。在工作項目 二中，我們將廣泛地研究先進CMOS 場效電晶體的隨機不匹配特性(random mismatch)。這項研究不僅對使用先進CMOS 元件的電路設計很重要，也有助於對 奈米元件的本質參數變異(intrinsic parameter fluctuation)的根本了解。在 工作項目三中，我們將對奈米級應變矽元件的戴子傳輸特性進行研究。這項研究 將有助於了解極微縮應變矽元件的戴子傳輸機制，也對未來提昇戴子遷移率的元 件設計有所幫助。