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Now showing 1 - 10 of 14
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    Transparent Hole-Transporting Frameworks: A Unique Strategy to Design High-Performance Semitransparent Organic Photovoltaics
    (1970-01-01)
    Cheng, Pei
    ;
    Wang, Hao-Cheng
    ;
    Zhu, Yuan
    ;
    Zheng, Ran
    ;
    Li, Tengfei
    Thanks to the nature of molecular orbitals, the absorption spectra of organic semiconductors are not continuous like those in traditional inorganic semiconductors, which offers a unique application of organic photovoltaics (OPVs): semitransparent OPVs. Recently, the exciting progress of materials design has promoted the development of semitransparent OPVs. However, in the perspective of device engineering, almost all reported works reduce the thickness of back/reflected electrode to obtain high average visible transmittance (AVT), which is a trade-off between power conversion efficiency (PCE) and the transmittance of the whole solar spectrum (visible and infrared), and therefore limit the further development. Herein, a unique strategy of "transparent hole-transporting frameworks" is proposed. A hole-transporting large-bandgap polymer (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA)) is employed to partially replace polymer donors in the active layer of PBDB-T/Y1. PTAA is a p-type polymer with a large bandgap of 2.9 eV; the partial substitution of PBDB-T by PTAA reduces the absorption of the active layer only in the visible region, keeping the hole-transporting pathways as well as the optimized film morphology. As a result, semitransparent OPVs with PCEs of 12% and AVTs of 20% are achieved, both on rigid and flexible substrates. To demonstrate the generality, this strategy is also used in three different active layers.
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    Enabling High-Performance Tandem Organic Photovoltaic Cells by Balancing the Front and Rear Subcells
    (1970-01-01)
    Cheng, Pei
    ;
    Wang, Hao-Cheng
    ;
    Zheng, Ran
    ;
    Zhu, Yuan
    ;
    Dai, Shuixing
    In tandem organic photovoltaics, the front subcell is based on large-bandgap materials, whereas the case of the rear subcell is more complicated. The rear subcell is generally composed of a narrow-bandgap acceptor for infrared absorption but a large-bandgap donor to realize a high open-circuit voltage. Unfortunately, most of the ultraviolet-visible part of the photons are absorbed by the front subcell; as a result, in the rear subcell, the number of excitons generated on large-bandgap donors will be reduced significantly. This reduces the (photo) conductivity and finally limits the hole-transporting property of the rear subcell. In this work, a simple and effective way is proposed to resolve this critical issue. To ensure sufficient photogenerated holes in the rear subcell, a small amount of an infrared-absorbing polymer donor as a third component is introduced, which provides a second hole-generation and transporting mechanism to minimize the aforementioned detrimental effects. Finally, the short-circuit current density of the two-terminal tandem organic photovoltaic is significantly enhanced from 10.3 to 11.7 mA cm(-2)(while retaining the open-circuit voltage and fill factor) to result in an enhanced power conversion efficiency of 15.1%.
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    Asymmetric Benzotrithiophene-Based Hole Transporting Materials Provide High-Efficiency Perovskite Solar Cells
    (2020-07-01)
    Budiawan, Widhya
    ;
    Lai, Kuan-Wen
    ;
    Karuppuswamy, Priyadharsini
    ;
    Jadhav, Tushar Sanjay
    ;
    Lu, Yen-An
    In this study, we synthesized a series of small-molecule benzotrithiophenes (BTTs) and used them as hole transporting materials (HTMs) in perovskite solar cells (PSCs). The asymmetric benzo[2,1-b:-3,4-b':5,6-b"]trithiophene unit was used as the central core to which were appended various donor groups, namely, carbazole (BTT-CB), thieno thiophene (BTT-FT), triphenylamine (BTT-TPA), and bithiophene (BTT-TT). The extended aromatic core in the asymmetric BTT provided full planarity, thereby favoring intermolecular pi-stacking and charge transport. The physical, optical, and electrical properties of these small-molecule HTMs are reported herein. BTT-TT displayed good crystallinity and superior hole mobility, when compared with those of the other three HTMs, and formed smooth and uniform surfaces when covering the perovskite active layer. Accordingly, among the devices prepared in this study, a PSC incorporating BTT-TT as the HTM achieved the highest power conversion efficiency (18.58%). Moreover, this BTT-TT-containing device exhibited good stability after storage for more than 700 h. Thus, asymmetric BTTs are promising candidate materials for use as small-molecule HTMs in PSCs.
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    Mechanism of stress induced leakage current in Si3N4
    (2019-07-01)
    Gritsenko, V. A.
    ;
    Gismatulin, A. A.
    ;
    Baraban, A. P.
    ;
    Chin, A.
    ;
    交大名義發表
    In this paper, the experimental current density versus electric field characteristics of Si3N4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si3N4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si3N4 before and after the induced stress at traps energies W-t = 1.6 eV and W-opt = 3.2 eV. The current leakage at different induced stresses in Si3N4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si3N4.
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    On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes
    (2019-01-01)
    Kou, Jianquan
    ;
    Chen, Sung-Wen Huang
    ;
    Che, Jiamang
    ;
    Shao, Hua
    ;
    Chu, Chunshuang
    In this paper, we model and investigate the carrier transport for the core-shell nanorod (NR) structured green light-emitting diodes (LEDs) for which the InGaN/GaN multiple quantum wells are grown on the nonpolar surface of the NR. Our results show the absence of polarization fields in the m-plane quantum wells for the core-shell NR LEDs, which manifest the flat energy band condition, the improved electron injection efficiency, and the high electron-hole wave functions overlap for the quantum wells, leading to the high radiative recombination rate and the enhanced quantum efficiency. We further find that the quantum efficiency is also affected by the vertical charge injection for the core-shell NR LEDs. The vertical charge injection is more sensitive to the doping concentration and the thickness of the p-GaN layer than of the n-GaN layer. Moreover, the increase of the NR height also leads to the nonuniform vertical charge injection.
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    Multiphonon trap ionization transport in nonstoichiometric SiNx
    (2019-03-01)
    Gritsenko, V. A.
    ;
    Gismatulin, A. A.
    ;
    Chin, A.
    ;
    交大名義發表
    ;
    National Chiao Tung University
    It is generally accepted that the charge transport in dielectrics is governed by coulombic trap ionization due to a barrier lowering in high electric fields (Frenkel effect). In this paper, the charge transport mechanism in Si3N4 and nonstoichiometric silicon rich SiNx is experimentally studied and quantitatively analyzed with five theoretical models: Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and Nasyrov-Gritsenko model of phonon-assisted electron tunneling between nearby traps. It is shown that the charge transport in Si3N4 and SiNx is qualitatively described by Frenkel effect, but Frenkel effect predicts an enormously low attempt to escape factor value. The charge transport at traps energies W-t = 1.6 eV and W-opt = 3.2 eV in Si3N4 and SiNx can be described by an increase in traps concentration in the framework of Makram-Ebeid and Lannoo model and Nasyrov-Gritsenko model. The Makram-Ebeid and Lannoo model quantitatively describes the charge transport in Si3N4 and SiNx with low silicon enrichment. The charge transport in nonstoichiometric SiNx with high silicon enrichment is well explained by Nasyrov-Gritsenko model.
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    New Alternating D-A(1)-D-A(2) Copolymer Containing Two Electron-Deficient Moieties Based on Benzothiadiazole and 9-(2-Octyldodecyl)-8H-pyrrolo[3,4-b]bisthieno[2,3-f:3 \',2 \'-h]quinoxaline-8,10(9H)-dione for Efficient Polymer Solar Cells
    (2016-01-01)
    Keshtov, M. L.
    ;
    Kuklin, S. A.
    ;
    Godovsky, D. Y.
    ;
    Khokhlov, A. R.
    ;
    Kurchania, R.
    A novel D-A(1)-D-A(2) copolymer denoted as P1 containing two electron withdrawing units based on benzothiadiazole (BT) and 9-(2-octyldodecyl)-8H-pyrrolo[3,4-b] bisthieno[2,3f:3\',2\'-h] quinoxaline-8,10(9H)-dione (PTQD) units was synthesized and characterized. The resulting copolymer exhibits a broad-absorption spectrum, relatively deep lying HOMO energy level (-5.44 eV) and narrow optical bandgap (1.50 eV). Bulk heterojunction (BHJ) polymer solar cells (PSCs) based on P1 as donor and PC71BM as acceptor with optimized donor to acceptor weight ratio of 1: 2 and processed with DIO/CB solvent showed good photovoltaic performance with power conversion efficiency of 6.21% which is higher than that of the device processed without solvent additive (4.40%). The absorption and morphology investigations of the active layers indicated that structural and morphological changes were induced by the solvent additive. This higher power conversion efficiency could bemainly attributed to the absorption enhancement and improved charge transported in the active layer induced by the better nanoscale morphology of the active layer. This study demonstrated that a copolymer with two different acceptor moieties in the backbone may be promising candidate as donor copolymer for solution processed BHJ PSCs. (C) 2015 Wiley Periodicals, Inc.
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    次32奈米CMOS元件可靠性分析、量子結構效應、與蒙地卡羅電荷傳輸模擬
    (2008)
    汪大暉
    ;
    WANG TAHUI
    ;
    國立交通大學電子工程學系及電子研究所
    當CMOS 元件微縮至32 奈米以下，無論在元件結構,材料與載子傳輸理論方面，均將發生重 大變化與挑戰。在本計劃內，吾人將針對先進CMOS 元件，例如,含形變之矽/鍺通道，高介電係 數/金屬閘極及具量子結構之元件，進行理論與實驗研究。在可靠度方面，吾人將延續在前期計畫 中所發展之單電子量測技術，研究新式閘極介電層材料之缺陷及其對載子移動率(carrier mobility) 之影響，並探討限制元件微縮之可靠性議題，如電流雜訊等。 在理論計算方面，吾人將以先前所發展之蒙地卡羅模擬為基礎，並配合載子能帶結構之計 算，研究各種增進載子移動率之技術，內容涵蓋具形變之元件通道，極短通道內載子之特殊傳輸 效應(velocity overshoot and ballistic motion)，及具量子結構之元件特性(例如FinFET, quantum well channel)，上述研究將著重於含量子結構與形變能帶結構之計算，綜合本計劃之研究目標，一為 利用吾人在元件可靠性量測方法之突破(單電子效應量測)，探討元件在微縮過程中新的材料與新 的元件結構所產生可靠性議題及相關物理機制，另一方面，針對目前各種新式元件提供一具量子 效應之蒙地卡羅模擬，以探討各種增進載子速度方法之理論基礎與極限。
  • Thumbnail Image
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    次32奈米CMOS元件可靠性分析、量子結構效應、與蒙地卡羅電荷傳輸模擬
    (2009)
    汪大暉
    ;
    WANG TAHUI
    ;
    國立交通大學電子工程學系及電子研究所
    當CMOS 元件微縮至32 奈米以下，無論在元件結構,材料與載子傳輸理論方面，均將發生重 大變化與挑戰。在本計劃內，吾人將針對先進CMOS 元件，例如,含形變之矽/鍺通道，高介電係 數/金屬閘極及具量子結構之元件，進行理論與實驗研究。在可靠度方面，吾人將延續在前期計畫 中所發展之單電子量測技術，研究新式閘極介電層材料之缺陷及其對載子移動率(carrier mobility) 之影響，並探討限制元件微縮之可靠性議題，如電流雜訊等。 在理論計算方面，吾人將以先前所發展之蒙地卡羅模擬為基礎，並配合載子能帶結構之計 算，研究各種增進載子移動率之技術，內容涵蓋具形變之元件通道，極短通道內載子之特殊傳輸 效應(velocity overshoot and ballistic motion)，及具量子結構之元件特性(例如FinFET, quantum well channel)，上述研究將著重於含量子結構與形變能帶結構之計算，綜合本計劃之研究目標，一為 利用吾人在元件可靠性量測方法之突破(單電子效應量測)，探討元件在微縮過程中新的材料與新 的元件結構所產生可靠性議題及相關物理機制，另一方面，針對目前各種新式元件提供一具量子 效應之蒙地卡羅模擬，以探討各種增進載子速度方法之理論基礎與極限。
  • Thumbnail Image
    Item type:Item,
    次32奈米CMOS元件可靠性分析、量子結構效應、與蒙地卡羅電荷傳輸模擬
    (2007)
    汪大暉
    ;
    WANG TAHUI
    ;
    國立交通大學電子工程學系及電子研究所
    當CMOS 元件微縮至32 奈米以下，無論在元件結構,材料與載子傳輸理論方面，均將發生重 大變化與挑戰。在本計劃內，吾人將針對先進CMOS 元件，例如,含形變之矽/鍺通道，高介電係 數/金屬閘極及具量子結構之元件，進行理論與實驗研究。在可靠度方面，吾人將延續在前期計畫 中所發展之單電子量測技術，研究新式閘極介電層材料之缺陷及其對載子移動率(carrier mobility) 之影響，並探討限制元件微縮之可靠性議題，如電流雜訊等。 在理論計算方面，吾人將以先前所發展之蒙地卡羅模擬為基礎，並配合載子能帶結構之計 算，研究各種增進載子移動率之技術，內容涵蓋具形變之元件通道，極短通道內載子之特殊傳輸 效應(velocity overshoot and ballistic motion)，及具量子結構之元件特性(例如FinFET, quantum well channel)，上述研究將著重於含量子結構與形變能帶結構之計算，綜合本計劃之研究目標，一為 利用吾人在元件可靠性量測方法之突破(單電子效應量測)，探討元件在微縮過程中新的材料與新 的元件結構所產生可靠性議題及相關物理機制，另一方面，針對目前各種新式元件提供一具量子 效應之蒙地卡羅模擬，以探討各種增進載子速度方法之理論基礎與極限。