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Now showing 1 - 10 of 38
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    Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
    (1998-12-14)
    Chuang, JC
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
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    Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
    (2010-01-01)
    Chang, Chih-Chieh
    ;
    Pan, Fu-Ming
    ;
    Chen, Ching-Wen
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    This study performs surface reduction treatments, including hydrogen plasma treatment and rapid thermal anneal (RTA) in hydrogen ambient, to reduce the nitrogen content in the surface layer of the TaNx ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly beta-TaNx, is formed on the PE-ALD TaNx thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated TaNx thin film significantly improves the adhesion of the TaNx film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated TaNx thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD TaNx thin film can sustain the thermal anneal at 600 degrees C, the one on the as-deposited TaNx thin film exhibits voiding even at a temperature as low as 400 degrees C.
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    Application of Aspergillus oryzae and Rhizopus oryzae for Cu(II) removal
    (1996-09-01)
    Huang, CP
    ;
    Huang, CP
    ;
    環境工程研究所
    ;
    Institute of Environmental Engineering
    Biosorption of copper(II) by the untreated and acid-treated fungal biomass has been studied in both batch and column modes. Two species, Aspergillus oryzae and Rhizopus oryzae, were used in this study. A. oryzae mycelia (undergoing acid-washing) exhibit a clear advantage in Cu(II) removal, compared with other adsorbents. The acid-washing process can strongly enhance the adsorption capacity for A. oryzae mycelia. However, acid-washing does not alter the metal adsorption capacity of R. oryzae mycelia. The result indicates that acid-washing is not only a pretreatment step but also a regeneration step in the heavy metal removal process. These dual purposes, therefore, give the acid-washing biomass an indication of successful prospect. Cultivating A. oryzae in pellet form is an effective means of mycelium immobilization. The method established in this study provides the high-yield, uniformly-sized particles (2-3 mm in diameter), which are effective in solid-liquid separation. This pellet column can completely remove metals before breakpoint. After the breakpoint, a significant amount of Cu(II) removal over a long period has been observed. This is thought to be the result of intracellular uptake. Copyright (C) 1996 Elsevier Science Ltd
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    Effect of Cu-Ion Concentration in Concentrated H3PO4 Electrolyte on Cu Electrochemical Mechanical Planarization
    (2010-01-01)
    Kung, Te-Ming
    ;
    Liu, Chuan-Pu
    ;
    Chang, Shih-Chieh
    ;
    Chen, Kei-Wei
    ;
    Wang, Ying-Lang
    The influence of Cu-ion concentration in a concentrated H3PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/cm(2) when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu(OH)(2) is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/[Cu(OH)(2)+CuO] in the Cu 2p(3/2) X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3425807] All rights reserved.
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    Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
    (1998-12-14)
    Chuang, JC
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
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    Effects of BF2+ implantation on the oxidation resistance of copper films
    (1999-06-01)
    Wu, ZC
    ;
    Liu, YL
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This work investigates the effects of BF2+ implantation on the oxidation resistance of copper films. The BF2+ ions were implanted into Cu films through a 1000 Angstrom thick screen SiO2 layer. We found that the oxidation resistance of Cu films can be significantly improved by BF2+ implantation at appropriate conditions. In particular, BF2+ implantation at 35 to 40 keV to a dose of 1 - 8 x 10(14) cm(-2) made the Cu films capable of resisting oxidation at temperatures up to 250 degrees C. At these BF2+ implantation energies, boron atoms of peak concentration were projected near the Cu surface; thus the diffusion paths of oxidizing species were efficiently blocked. Implantation at too high energy would result in greater depth of projection, thus a lower concentration of boron at the Cu surface; moreover, it generally leads to increased implantation defects that might serve as diffusion paths for the oxidation species. On the other hand, too high dosage implantation would also have an adverse effect on the capability of oxidation resistance for Cu films owing to the higher density of implantation damage as well as the formation of reactive fluorine compound (CuF2) near the Cu surface. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane
    (1999-08-01)
    Lin, PJ
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films,was dependent on the film's microstructure and impurity content, which in turn. were dependent on the deposition conditions. Using H-2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Angstrom/min. The lowest resistivity Cu films can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr.
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    Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
    (1999-10-15)
    Hu, TC
    ;
    Chiu, SY
    ;
    Dai, BT
    ;
    Tsai, MS
    ;
    Tung, IC
    A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
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    Passivation of copper films with magnesium doping using recoil ion implantation
    (2000-01-10)
    Wu, ZC
    ;
    Liu, YL
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Electrical properties of Ta2O5 thin films deposited on Cu
    (2000-02-01)
    Ezhilvalavan, S
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta2O5/Cu/n-Si, were studied. Ta2O5 films subjected to rapid thermal annealing (RTA) at 800 degrees C for 30 s in N-2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (<100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (>100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta2O5 storage capacitors. (C) 2000 Elsevier Science S.A. All rights reserved.