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Now showing 1 - 8 of 8

High adhesion and quality diamond films on steel substrate
(1998-06-01)
Lin, CR
;
Kuo, CT
;
材料科學與工程學系
;
Department of Materials Science and Engineering
A process to deposit a diamond coating on steel substrates has been successfully developed. It includes the electroplating of nickel by using an electrolyte dispersed with micro-diamonds, and then a diamond deposition through a microwave plasma chemical vapor deposition system. The diamond films were characterized by Raman and CL spectroscopy, XRD, SEM and SEM line scanning. The results show a high diamond crystal quality, low residual stress (about 0.67 GPa) and high nucleation density. The adhesion of the films was evaluated by a cutting test and an interface examination. The results show that the retentivity of the diamond grits in the films after the cutting test is much better than that in the commercial electroformed diamond tools. The advantages of the process are: (1) the formation of nickel-carbon-hydrogen alloys to enhance diamond nucleation and growth, (2) the micro-diamonds acting as the seeds for diamond nucleation and growth, and forming effective mechanical interlocking with the nickel interlayer, and (3) the formation of good diffusion bonding of the nickel interlayer with the steel substrate. (C) 1998 Elsevier Science S.A.
Improvement in adhesion of diamond films on cemented WC substrate with Ti-Si interlayers
(1998-12-01)
Lin, CR
;
Kuo, CT
;
Chang, RM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Diamond films were deposited on the cemented WC+(3-5)% Co substrates by a microwave plasma chemical vapor deposition system. The substrates were pretreated with various processing steps before diamond deposition, including: polishing, etching for Co removal, Ti coating by DC sputter, and amorphous Si coating by E-gun. The residual stress of the films was determined by both Raman shift and low incident beam angle X-ray diffraction (LIBAD) methods. The adhesion of the films was evaluated by indentation adhesion testing. The him morphology and film-substrate interface structure were examined by SEM and Auger electron spectroscopy, respectively. The results show that Ti-Si can be a good interlayer to improve film adhesion and inhibit diffusion of Co to the substrate surface on diamond nucleation. This is due to the formation of strong TiC and SiC bonding to enhance film adhesion; Si acts as a promoter for diamond nucleation, and the residual stress with application of interlayer is much lower than that interlayer-free. The results also show the existence of an optimum Ti thickness for the best film adhesion. (C) 1998 Elsevier Science S.A. All rights reserved.
Growth of diamond films with bias during microwave plasma chemical vapor deposition
(2002-03-01)
Lu, CA
;
Chang, L
;
Huang, BR
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Diamond films on 3-inch diameter (100) silicon wafers were synthesized with bias during microwave plasma vapor deposition (MPCVD). The deposition parameters were as follows: 0.13% CH4 in H-2 pressure at 30 torr; deposition temperature at 768-869 degreesC, and a deposition time of 3-3.5 h. The bias voltage applied to the substrates during diamond growth varied from 0 to -450 V. The deposited films were characterized by Raman spectroscopy and electron microscopy. The results show that the film properties are uniform across the whole 3-inch diameter area. Raman spectra show that the ratio of sp(3) to sp(2) is increased with the bias voltage up to -350 V, while further increases in voltage resulted in a decreased ratio. It was found that column-shaped grains of diamond were directly grown from the substrate surface without grain coalescence in the lateral direction during growth. The nucleation density of diamond with biased growth was of the order of 10(9) cm(-2). (C) 2002 Elsevier Science B.V. All rights reserved.
Diamond deposition on Si (111) and carbon face 6H-SiC (0001) substrates by positively biased pretreatment
(2002-03-01)
Chang, TF
;
Chang, L
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The growth of textured diamond films on Si (111) and carbon face 6H-SiC (0001) has been achieved by positive bias-enhanced-nucleation in microwave plasma chemical vapor deposition. A bias voltage of + 100 to +300 V, 3% CH4 concentration in bias step, and 0.33% CH4 concentration in growth step were used to synthesize diamond films on Si and carbon face 6H-SiC. Highly oriented diamond films were observed by scanning electron microscopy and X-ray diffraction patterns. Cross-sectional transmission electron microscopy showed that the interface between diamond and Si substrate was smooth, while it was rough between diamond and SiC. It also showed that diamond films were directly grown on both substrates. (C) 2002 Elsevier Science B.V. All lights reserved.
Formation of carbon cluster on the surface of diamond films for improving electron field emission properties
(2002-10-01)
Chang, YC
;
Tu, JC
;
Kuo, CT
;
Wang, CY
;
Lin, IN
The electron field emission properties of the diamond films were significantly improved via the formation of nanosized carbon clusters on their surface. The microstructures and Raman spectroscopy are markedly altered when the diamond films were coated with a thin layer of Fe/Co films (< 10 nm) and then post-annealed at high enough temperature ( > 800degreesC). The turn-on field was decreased from 14.8 to 7.6 V/mum and the electron field emission current density was increased more than 2 order of magnitude, from 20 to 2400 muA/cm(2), due to post-annealing process. (C) 2002 Elsevier Science B.V. All rights reserved.
Nondestructive characterization of the film quality and stress states in diamond films on various substrates
(2000)
Kuo, CT
;
Wu, JY
;
Chou, SL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Diamond films deposited on various substrates were characterized nondestructively by Raman spectroscopy and X-ray diffraction (XRD) to evaluate their stress states and film quality. The X-ray diffraction method is further divided into two methods, i.e., the low incident beam angle X-ray diffraction (LIBAD), and Clemens-Bain method for the textured films. The whole-pattem-fitting structure refinement method, or called "Rietveld method" was adapted in XRD method to improve its accuracy. The film adhesion, film morphology and film structures including its non-diamond carbon content, crystal size, texture coefficient, film thickness and surface roughness were also examined. The correlations between structure and residual stress of the films on various substrates and under various deposition and pretreatment conditions were analyzed. The feasibility of nondestructive evaluation the Blm quality and stress states, and the origins of the residual stress of the films were discussed.
Characterization of diamond films grown on amorphous SiO2
(1996-04-01)
Chen, CF
;
Leu, SY
;
Chen, SH
;
Yeh, WK
;
交大名義發表
Continuous diamond film growth on SiO2 was achieved by an effective pretreatment. Carbon implantation and diamond powder abrasion were used to enhance diamond nucleation on SiO2. The possibility of using two gas mixtures (CH4-CO2 and CH4-H-2) in order to achieve the growth of continuous diamond films on SiO2 was examined. The diamond film growth rate obtained using the CH4-CO2 gas mixture was 0.6 mu m/h which is roughly three times higher than that of the CH4-H-2 gas mixture. CH4-H-2 gas mixtures had a lower etching reaction rate than that of CH4-CO2 gas mixtures. The higher etching rate of the CH4-CO2 gas mixture was considered to be due to a higher concentration of active carbon radicals or carbon-containing species in the plasma. Scanning electron microscopy (SEM) and optical emission spectroscopy (OES) indicated that active carbon radicals and carbon-containing species are the major cause of pits arising at the surface. Using CH4-H-2 gas mixtures at a low microwave power gave the optimum reaction conditions for depositing diamond films on SiO2 layers.
Application of heat treatment and dispersive strengthening concept in interlayer deposition to enhance diamond film adherence
(1997-10-31)
Lin, CR
;
Kuo, CT
;
Chang, RM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Two different deposition processes were carried out to enhance adherence of diamond films on WC + 3 similar to 5%Co substrate with Ti-Si as the interlayer. One process can be called two-step diamond deposition process. Another process can be called interlayer heat treatment process. Diamond films were deposited by a microwave plasma chemical vapor deposition system. Ti and Si interlayer are deposited by DC sputter and an E-gun, respectively. Film morphologies, interface structure and film qualify were examined by SEM, XRD, Auger electron spectroscopy and Raman spectroscopy. The residual stresses and adhesion strengths of the films were determined by Raman spectroscopy and indentation adhesion testing, respectively. Comparing the regular one-step diamond deposition process with the present two different new processes, the average dP/dX values, which are a measure of the adherence of the film, are 354 kgf/mm, 494 kgf/mm and 787 kgf/mm, respectively. In other words, the interlayer heat treatment process gives the best film adherence on average. For the two-step diamond deposition process, the interlayer thickness and the percent diamond surface coverage of the first diamond deposition step are the main parameters, and there exists an optimum Ti thickness and percent diamond coverage for the best film adherence. The main contribution to better film adherence is not a large difference in residual stress, but is due to the following reasons. The interlayer heat treatment can transform amorphous Si to polycrystalline Si, and may form strong TiC and SiC bonding. The polycrystalline Si and the diamond particles from the first diamond deposition step can be an effective seeds to enhance diamond nucleation. Published by Elsevier Science S.A.

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