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Subject: search.filters.subject.dielectric constant

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Now showing 1 - 10 of 24
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    High-Gain Patch-Fed 3D-Printing Fresnel Zone Plate Lens Antenna for 60-GHz Communications
    (2018-01-01)
    Chi, Pei-Ling
    ;
    Pao, Chi-Hsien
    ;
    Huang, Ming-Hui
    ;
    Yang, Tao
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    電機工程學系
    This paper presents a high-gain Fresnel zone plate lens antenna designed for 60-GHz systems. Manufactured with the 3D printing technology and fed by a simple patch on the substrate, the proposed Fresnel lens antenna allows for low-cost fabrication and easy integration with planar circuitry. Experimental results show that the prototype antenna can achieve a 10-dB impedance bandwidth from 56.6 GHz to > 67 GHz and the peak gain of 14 similar to 20 dBi across the bandwidth, corresponding to gain enhancement of 9.2 similar to 10.9 dB.
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    Comparative role of metal-organic decomposition-derived [100] and [111] in electrical properties of Pb(Zr,Ti)O-3 thin films
    (1997-07-01)
    Chen, SY
    ;
    Chen, IW
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The effect of composition (phase), texture, microstructure and thickness on electrical properties of Pb(Zr1-zTiz)O-3 (PZT) films have been evaluated. Zr-rich PZT films with [111] texture have a higher remanent polarization and dielectric constant, but a lower coercive field as compared with PZT[100] films. Ti-rich PZT films with [100] texture have a higher dielectric constant, but a lower remanent polarization and coercive field as compared with PZT[111] films. Near the morphotropic phase boundary (MPB) composition, films with a mixed texture of [111] and [100] have a higher dielectric constant than PZT[100] and PZT[111] films even though the values of remanent polarization and coercive field of the mixed textured films are in between those of the other two films. Both remanent and saturation polarization are independent of film thickness, whereas dielectric constant decreases but coercive field increases at very small thickness.
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    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2002-02-17)
    Sun, CL
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    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
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    The role of CuO-MOx in low-fire high dielectric ceramics for multilayer capacitors
    (1999)
    Chen, SY
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    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    CuO-based oxide mixtures were selected as sintering aid for (Ba,Ca)(Ti,Zr)O-3 ceramics. Both microstructure and dielectric properties of were remarkably influenced by BaCO3-CuO flux type. With 1 wt % additive of BaCuO2-2.5CuO eutectic phase, (Ba,Ca)(Ti,Zr)O-3 ceramics give high dielectric constant of 11000 and uniform grain size of 4 - 10 mu m when sintered at 1130 degrees C for 1 h. Different kinds of CuO-MOx mixtures were also used to investigate the role of MOx metal oxide in the grain growth and densification of CuO-added (Ba,Ca)(Ti,Zr)O-3 ceramics. The eutectic temperature between CuO and MOx plays an important key in microstructure evolution. Both dielectric properties and microstructure can be further modified with doping secondary oxides.
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    Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
    (2000-08-15)
    Ezhilvalavan, S
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper reviews the recent developments of (Ba,Sr)TiO3 (BST) thin films for future Gbit era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors in the last decade are briefly described first. Then the technological aspects of BST films such as deposition techniques, post-annealing, physical, electrical and dielectric characteristics of the films, effects of electrode materials, dielectric relaxation and defect analysis and the reliability phenomena associated with the films are briefly reviewed with specific examples from recent literature. The basic mechanisms that control the bulk electrical conduction and the origin of leakage currents in BST films are also discussed. Finally, possible developments of gigabit era DRAM technology are summarized. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties
    (2001)
    Nayak, M
    ;
    Lee, SY
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Barium strontium titanate thin films with composition (Ba0.5Sr0.5)TiO3 were prepared by a sot-gel method using hydroxide-alkoxide precursors. Reasonably well-crystallized film was obtained at a temperature as low as 500 degreesC. The leakage current characteristics and dielectric constant of the films varied with the annealing temperature due to the change in microstructure. The electrical and dielectric properties of the films showed strong dependence on the precursor solution concentration. Dielectric response of the films prepared from dilute solution is superior to that prepared from the concentrated solution. The change in electrical and dielectric characteristics of the films has been correlated to their microstructure, which revealed that the concentration change affected the grain size distribution, film porosity and morphology.
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    Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
    (2001-11-01)
    Chang, TC
    ;
    Mor, YS
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    Liu, PT
    ;
    Tsai, TM
    ;
    Chen, CW
    The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained. (C) 2001 Elsevier Science B.V. All rights reserved.
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    High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
    (2002-04-01)
    Chen, SB
    ;
    Lai, CH
    ;
    Chin, A
    ;
    Hsieh, JC
    ;
    Liu, J
    We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
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    Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
    (2002-04-01)
    Chen, SB
    ;
    Lai, CH
    ;
    Chan, KT
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    Chin, A
    ;
    Hsieh, JC
    We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
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    Characterization of porous silicate for ultra-low k dielectric application
    (2002-07-01)
    Liu, PT
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    Chang, TC
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    Hsu, KC
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    Tseng, TY
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    Chen, LM
    Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 degreesC for I h. A series of material analysis techniques and electrical characteristics have been used to verify the physical and chemical characteristics of the porous silicate film. (C) 2002 Elsevier Science B.V. All rights reserved.