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Now showing 1 - 8 of 8

Spectroscopy of a single Sb2Se3 nanorod
(2009-08-01)
Sun, Kien Wen
;
Yang, Cheng-Hang
;
Ko, Ting-Yu
;
Chang, Hao-Wei
;
Liu, Chen-Wei
In this paper, we present solvothermal methods to chemically synthesize Sb2Se3 nanorods using dialkyl diselenophosphate (dsep) complexes of antimony. Energy-dispersive X-ray analysis shows the products are phase pure. We have also studied the Raman and photoluminescence spectroscopy of a single Sb2Se3 nanorod with an average size of 60 nm in diameter and a length less than 1 mu m. Techniques have been devised to immobilize and allocate a single nano-object on an electron beam (E-beam) patterned smart substrate with metallic coordination markers. This also overcomes the limitation of spatial resolution of conventional Optical techniques (similar to 1 mu m) to perform optical spectroscopy on an individual nano-object less than 100 nm in size. Raman spectroscopy reveals that Sb2Se3 nanorods synthesized at a lower temperature contain a small amount of Sb2Se3. The broad linewidth observed in luminescence spectra from a single rod is attributed to the increasing number of surface defects, impurities, and dangle bonds attached on the surface as the nanoparticle size reduced to nanometer scale.
Magnetic domain pinning in lithographically patterned amorphous magnetic layer
(1999-03-01)
Wu, JC
;
Huang, YW
;
Chen, BM
;
Wu, TH
;
Shieh, HPD
Artificial pinning sites have been fabricated for the magnetic domain pinning in perpendicular anisotropy magneto-optical (MO) thin film media. The pinning sites were radial hole array made by patterning a layer of radial gold grid on the silicon nitride (SiN) coated silicon (Si) substrate using a standard electron beam lithography. Various magnetization and demagnetization procedures were performed to investigate the magnetic domain pinning behavior. A polar Kerr microscope was used in situ to monitor the magnetic wall motion and a magnetic force microscope was employed to scan the magnetic domain structures. Magnetic domains were found to be pinned inside the hole array and resembled to the geometric shape of the holes. The coercivity in the patterned MO layer is much higher than in thr unpatterned MO layer. Moreover, the coercivity in the larger pinning sites area is higher than in the smaller pinning sites area.
New nanometer T-gate fabricated by thermally reflowed resist technique
(2002-12-15)
Lee, HM
;
Chang, EY
;
Chen, SH
;
Chang, CY
;
電子工程學系及電子研究所
Novel nanometer T-gate process has been developed utilizing electron beam (EB) lithography and thermally reflowed resist technique. Through well-controlled EB exposure dosage, heating time and reflow temperature; the resist structures can be efficiently reflowed to form the desired T-gate configuration with dimension ranging from 150 nm to 30 nm. After Ti/Pt/Au metal deposition by electron gun evaporation and lift-off process, the nanometer T-gates with thickness of about 500 nm were formed. With the optimized conditions, ultra-short 30 nm T-shaped gate was clearly demonstrated on the GaAs substrate. This is the smallest T-gate reported with the thermally reflowed technique in the literature so far and can practically be used in the GaAs monolithic microwave integrated circuit (MMIC) fabrications.
Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
(2003-06-15)
Lee, HM
;
Yang, TH
;
Luo, GL
;
Chang, EY
;
材料科學與工程學系
Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like. [DOI: 10.1143/JJAP.42.L718].
Controlled placement of self-organized Ge dots on patterned Si (001) surfaces
(2004-02-15)
Lee, HM
;
Yang, TH
;
Luo, GL
;
Chang, EY
;
材料科學與工程學系
The positioning and ordering of the self-organized Ge dots were controlled using the ultra high-vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The experimental results indicate that the edge smoothness of the etched Si holes affects the distribution and long-range ordering of the Ge dots formed. With optimized etching conditions, the Ge dots can be grown uniformly on the edges of the holes etched on the patterned Si substrates. The sizes of the Ge dots are approximately 10 nm. The proposed, technique can be applied to the fabrication of regimented arrays in signal processing applications.
Self-assembled molecular magnets on patterned silicon substrates: Bridging bio-molecules with nanoelectronics
(2007-04-01)
Chang, Chia-Ching
;
Sun, Kien Wen
;
Lee, Shang-Fan
;
Kan, Lou-Sing
;
生物科技學系
The paper reports the methods of preparing molecular magnets and patterning of the molecules on a semiconductor surface. A highly magnetically aligned metallothionein containing Mn and Cd (Mn,Cd-MT-2) is first synthesized, and the molecules are then placed into nanopores prepared on silicon (001) surfaces using electron beam lithography and reactive ion-etching techniques. We have observed the self-assemble growth of the NIT molecules on the patterned Si surface such that the NIT molecules have grown into rod or ring type three-dimensional nanostructures, depending on the patterned nanostructures on the surface. We also provide scanning electron microscopy, atomic force microscopy, and magnetic force microscope studies of the molecular nanostructures. This engineered molecule shows molecular magnetization and is biocompatible with conventional semiconductors. These features make Mn,Cd-MT-2 a good candidate for biological applications and sensing sources of new nanodevices. Using molecular self-assembly and topographical patterning of the semiconductor substrate, we can close the gap between bio-molecules and nanoelectronics built into the semiconductor chip. (c) 2006 Elsevier Ltd. All rights reserved.
Fabrication and characterization of three-dimensional all metallic photonic crystals for near infrared applications
(2009-01-26)
Yang, Yu-Lin
;
Hou, Fu-Ju
;
Wu, Shich-Chuan
;
Huang, Wen-Hsien
;
Lai, Ming-Chih
Three-dimensional all metallic photonic crystals with a feature size of 0.20 mu m were fabricated using electron-beam lithography with the photoresist of hydrogen silesquioxane. This process method has high compatibility with the fabrication of damascene copper interconnections and also simplifies the whole process flow. The dependence of the complete photonic band gaps on polarization was experimentally observed and compared with the simulation results. The band edge for the four-layer lattice was found at a wavelength of around 0.80 mu m in normal incidence.
A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
(1996-12-01)
Lai, YL
;
Chang, EY
;
Chang, CY
;
Yang, HPD
;
Nakamura, K
A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-mu m-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.

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