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Adhesion Properties of Electroplating Process Between Polyimide and Metal Layer for Polymer/Metal Hybrid Bonding
(2020-01-01)
Lu, Cheng-Hsien
;
Yang, Yi-Lun
;
Chen, Chiao-Pei
;
Tsai, Bin-Ling
;
Chen, Kuan-Neng
This article investigates the adhesion properties between the polyimide layers and the Ti/Cu layer after the electroplating process. The adhesion strength was evaluated by the four-point bending system, and the influence factors were confirmed by using different electroplating times and currents. The fracture interface after the four-point bending measurement was characterized, and the interface spectrum between the polyimide and the Ti/Cu layer was analyzed. The results showed that the modified polyimide-like material has better adhesion performance than the conventional polyimide. Moreover, the mechanism of degradation was proposed. As a result, the modified polyimide-like material can be applied in electroplating, a redistribution layer (RDL) formation, and packaging at the back-end-of-line processes.
Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure
(1970-01-01)
Wang, I-Ju
;
Ku, Ching-Shun
;
Tu-Ngoc Lam
;
Huang, E-Wen
;
Tu, K. N.
We have examined the effect of different bath temperatures on residual stress of both the random-oriented Cu films and the highly (111)-oriented nanotwinned Cu films by synchrotron radiation x-ray measurements. The bath temperature varied from 15 degrees C to 40 degrees C. The results indicate that the average residual stress in the highly (111)-oriented nanotwinned films is higher than that in the randomly oriented Cu films. However, the stress in the highly (111)-oriented Cu decreases with increasing bath temperature. The average residual stress can be reduced from 253 MPa electroplated at 15 degrees C to 95 MPa under a bath temperature of 35 degrees C. We could successfully tune and measure residual stress of the Cu thin films. The films with low residual stress prevent warpage from occurring on the substrate and lower the processing failure in copper direct bonding and other processes that need alignment.
Fabrication and characterization of electroplated nanotwinned-copper films on polymer substrates(IMPACT-IAAC 2016)
(2016)
Chang, Liang-Hsien
;
Chen, Chih
;
Hu, Dyi-Chung
;
Tain, Ray
;
Chen, Y. H.
Nanotwinned copper (nt-Cu) is drawing wide attention for it simultaneously demonstrates high strength and high ductility, which are thought to be mutually exclusive. According to previous studies, nanotwinned Cu may be the best structure for resisting electromigration damage. In this study, we deposit (111)-oriented nt-Cu using direct current with suitable additives on PCB substrates. Current density and the plating bath are variables. After copper electroplating, XRD, FIB, EBSD were used to observe the microstructure of the films. We found that the as-deposited Cu has > 30% (111)-oriented nt-Cu on the polymer substrate. The microstructures of the highly (111)-oriented nt-Cu will be presented.
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
(2002-08-01)
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
Investigation of carrying agents on microstructure of electroplated Cu films
(2002-11-01)
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Adding high molecular-weight polyethylene glycol (PEG) as a carrying agent benefits Cu electroplating from the viewpoint of an increase in both filling capability and films' conductivity, when plated in a lower current-density region. On electroplating in a higher current-density region, a gradually decreasing grain size from the top to bottom of Cu films occurs in the electrolyte without PEG or with PEG200. In comparison, sharp grains are formed for the mentioned multi-domain crystallization for those films deposited by the electrolyte containing PEG2000 or PEG6000 due to its lower surface tension which facilitates grain growth along the higher electric field. The used concentration of PEG was flexible due to the fact that the surface morphology, resistivity and deposition rate of deposited films remained almost unchanged over a wide PEG concentration range.
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
(2000)
Shieh, JM
;
Suen, SC
;
Lin, KC
;
Chang, SC
;
Dai, BT
In our work, fluorinated amorphous carbon films (a-C:F) was deposited by PECVD. The amorphous carbon films (a-C:F) with low dielectric constant (K similar to2.3), thermal stability (higher than 400 degreesC) and acceptable adhesion to cap-layer such as SiOF was obtained by optimum of content ration between carbon with fluorine and adding few SiH4 for improvement of adhesion. The etching profile with high aspect ratio and etching selection ration more than 50 (a-C:F/SiOF) were obtained by etching gas of N-2+O-2. Furthermore, we demonstrated the technology of electroplating copper in trenches or vias as small as 0.15 mum, 6:1 AR The wetting agent system was consisted of mainly two molecular weights polyethylene glycols (PEG). The small molecular weight PEG (200) with better diffusion ability for reducing the surface tension and the larger PEG (2000) enhancing grain growth control was proposed for the first time to wet the inner portion of the sub-150 nm damascene feature. The leveling agent system was mainly heterocyclic compound contained N, S atoms offering sufficient activation over-potential and selective inhibition gradient.
Characterization of embedded root method in UV-LIGA process
(2003)
Ho, CH
;
Hsu, W
;
機械工程學系
;
Department of Mechanical Engineering
SU-8 photoresist has been popularly used as a mold for electroplating and facilitated low-cost MEMS production in many previous researches. However, the reachable thickness of electroplated structures standing on the substrate were limited to 50 mum below due to the internal stress and deformation of the SU-8 resist in final stripping process. In order to fabricate thicker structures, an embedded root method has been proposed to consolidate the adhesion of the metal structures to the substrate during the SU-8 removal process. In this paper, detailed investigation on this method is conducted to characterize the relationship among the root depth, the line-width and the allowable thickness of the electroplated structures. Some test patterns with embedded roots are designed and tested to generalize the possible extent of various structural scales associated with different niches in depth, which are completely defined through SiO2 masking and KOH etching processes., Based on establishment of the relationship between the root depth and the geometric sizes, a 3-D integrated coil with 200 mum in thickness, 80 mum in width and 4 mum in root depth is successfully released by the SU-8 mold with 400 mum in height, which can not be achieved by the standard SU-8 molding process. The UV-LIGA process presented herein may be applied to the fabrication of other microstructures and microactuators.
Design and fabrication of a three-dimensional long-stretch micro drive by electroplating
(2003)
Wu, CT
;
Tai, WC
;
Hsu, CP
;
Hsu, W
;
機械工程學系
Although lots of works have been devoted to develop the microactuators or microstructures, few researches have been done on three-dimensional microactuators. Here the feasibility investigation on a three-dimensional electrothermally driven long-stretch micro drive (LSMD) is proposed by integrating the LSMD and mechanical hinge mechanism. The LSMD (about 2000 mum x 500 mum) consists of two cascaded compliant structures in parallel. Each cascaded structure is formed by connecting several basic actuation units in series. The mechanical hinge is used to allow the LSMD to be lifted as a three-dimensional structure. One of the important issues in fabricating the three-dimensional microactuator is the conducting circuit to actuate the microactuator. Here the Ni electroplating process is used to fabricate the mechanical hinge structure and the LSMD, then the mechanical hinge itself can act as the conductive circuit easily. From the LSMD simulation results, several design parameters are found to have significant influence on the output displacements. Larger out-stretching displacements are feasible by proper choice of design parameters. Preliminary fabrication results of nickel-made LSMD exhibit output displacement of 190 mum at input voltage of 3 volts. Fabrication results of nickel-made three-dimensional LSMD are also presented.
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
(2005-05-01)
Chiu, SY
;
Wang, YL
;
Chang, SC
;
Feng, MS
;
材料科學與工程學系
In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (similar to 5.2 x 10(18) m(-2)) of PIII I'd was required to drive Cu-ECP and the dependence of Pd dosage on the implantation time was quasi-linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity (> 10 mu Omega cm) while too low a I'd dosage resulted in an insufficient nucleation site for Cu-ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap-filling capability of Cu-ECP and the Cu(111) formation of electroplated copper films. (c) 2004 Elsevier B.V. All rights reserved.
Thermal bimetallic microactuators by Ni and Ni-diamond nanocomposite
(2007)
Huang, Chia-Sheng
;
Chung, Junwei
;
Cheng, Yu-Ting
;
Hsu, Wensyang
;
機械工程學系
In previous investigation, it was found that Ni-diamond nanocomposite fabricated by adding nano-diamond particles in nickel plating could enhance coefficient of thermal expansion (CTE). Here thermal bimetallic microactuators made of Ni and Ni-diamond nanocomposite are proposed, fabricated, and tested. By controlling plating sequence of Ni and Ni-diamond nanocomposite, two types of the thermal bimetallic microactuators, including upward displacement and downward displacement types, are developed. Due to the same low process temperature in electroplating these two layers, the residual thermal stress and initial deformation of. fabricated thermal bimetallic microactuators are small. Since two materials in the bimetallic actuators are Ni-based, the bonding strength between Ni and Ni-diamond nanocomposite is found to be strong. From vibration test, after 109 cycles, the resonant frequency remains unchanged. From thermal cycling test, the fabricated thermal bimetallic microactuator shows good interfacial bonding strength with only 0.002 % deviation of resonant frequency and 13.5 % deviation of tip deflection after 1,000 continuous thermal cycles.

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