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Now showing 1 - 10 of 47
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    A Reliable Schottky Barrier Height Extraction Procedure
    (2016)
    Tsui, Bing-Yue
    ;
    Fu, Tze-Yu
    ;
    電機學院
    ;
    電子工程學系及電子研究所
    ;
    College of Electrical and Computer Engineering
    This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (similar to 0.3 eV) and high doping concentration (similar to 1x10(20) cm(-3)). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.
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    A High Efficiency Field Emitters Pt/Si-nanocones Array with Vertically Aligned Structure
    (2015-01-01)
    Kao, P. H.
    ;
    Tai, H. M.
    ;
    Wang, H. W.
    ;
    Chiang, T. Y.
    ;
    Juang, J. Y.
    An effective method of fabricating vertically aligned silicon nanocones (Si-NCs) was realized by using the self-assembled silver (Ag) nanoislands as natural metal-nanomask during dry etching process. The obtained Si-NCs were preferentially aligned along the c-axis direction. To enhance the field emission property, thin platinum (Pt) films (similar to 20 nm) were subsequently deposited on the Si-NCs by sputter coater to form Pt/Si-NCs heterostructures. The turn-on field defined by the 1 mu A/cm(2) current density criterion is similar to 2.85 V/mu m. As measurements of field emission, the low turn-on field was attributed to the vertical one-dimensional nanostructures, and perhaps more importantly, proper density distribution of the Pt/Si-NCs. The suggesting an interesting alternative route for producing Si-NCs that might be useful for optical and electronic applications.
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    金屬氫化法製作奈米裂隙---表面傳導電子發射顯示技術應用
    (2008)
    潘扶民
    ;
    PAN FU-MING
    ;
    國立交通大學材料科學與工程學系(所)
    我們擬利用鈀(Pd)金屬氫化(palladium hydrogenation)法在Pd 電極上產生奈米裂隙 場發射結構，製作出表面傳導電子發射(surface conductive electron emission，SCE)元件， 探討其於表面傳導電子場發射平面顯示器技術(surface conduction electron emitter display，SED ) 的應用。當氫氣溶入Pd 金屬薄膜後，造成材料體積的增加，產生應變， 導致薄膜斷裂，於是形成了奈米裂隙，裂隙寬度及均勻性與SCE 元件結構設計、氫化 溫度與氫氣壓力有密切關係。本計畫的研究重點內容簡述如下： (一) SCE 元件的製程 步驟相當簡單，利用鍍膜，lift-off 微影與氫化製程便可在SCE 元件上形成奈米尺度的 場發射裂隙，但必須適當設計SCE 元件內Pd 電極薄膜結構與控制氫化條件，我們除 設計製作SCE 元件結構，並將探討最佳化的氫化條件，以形成適當的場發射奈米裂隙。 (二) SED 的顯像效能取決發射自閘極的電子數量，表面物化特性會顯著影響電子發射 效率，我們將進行Pd 電極表面改質，提升電子發射效率，如沉積非晶質碳與氧化銥披 覆層於Pd 電極上。(三)為了達成前兩項工作目標，我們將利用電腦模擬SCE 元件Pd 薄膜電極在氫化條件下的應力分佈，及閘極散射電子的發射軌跡，做為SCE 元件結構 設計與製程的參考。(四)為了探討氫化SCE 元件實際應用於SED 顯示器技術的可行 性，我們將進行SCE 元件的電性量測，點亮測試與可靠性研究。
  • Thumbnail Image
    Item type:Item,
    金屬氫化法製作奈米裂隙---表面傳導電子發射顯示技術應用
    (2009)
    潘扶民
    ;
    PAN FU-MING
    ;
    國立交通大學材料科學與工程學系(所)
    我們擬利用鈀(Pd)金屬氫化(palladium hydrogenation)法在Pd 電極上產生奈米裂隙 場發射結構，製作出表面傳導電子發射(surface conductive electron emission，SCE)元件， 探討其於表面傳導電子場發射平面顯示器技術(surface conduction electron emitter display，SED ) 的應用。當氫氣溶入Pd 金屬薄膜後，造成材料體積的增加，產生應變， 導致薄膜斷裂，於是形成了奈米裂隙，裂隙寬度及均勻性與SCE 元件結構設計、氫化 溫度與氫氣壓力有密切關係。本計畫的研究重點內容簡述如下： (一) SCE 元件的製程 步驟相當簡單，利用鍍膜，lift-off 微影與氫化製程便可在SCE 元件上形成奈米尺度的 場發射裂隙，但必須適當設計SCE 元件內Pd 電極薄膜結構與控制氫化條件，我們除 設計製作SCE 元件結構，並將探討最佳化的氫化條件，以形成適當的場發射奈米裂隙。 (二) SED 的顯像效能取決發射自閘極的電子數量，表面物化特性會顯著影響電子發射 效率，我們將進行Pd 電極表面改質，提升電子發射效率，如沉積非晶質碳與氧化銥披 覆層於Pd 電極上。(三)為了達成前兩項工作目標，我們將利用電腦模擬SCE 元件Pd 薄膜電極在氫化條件下的應力分佈，及閘極散射電子的發射軌跡，做為SCE 元件結構 設計與製程的參考。(四)為了探討氫化SCE 元件實際應用於SED 顯示器技術的可行 性，我們將進行SCE 元件的電性量測，點亮測試與可靠性研究。
  • Thumbnail Image
    Item type:Item,
    金屬氫化法製作奈米裂隙 --- 表面傳導電子發射顯示技術應用
    (2010)
    潘扶民
    ;
    PAN FU-MING
    ;
    國立交通大學材料科學與工程學系（所）
    我們擬利用鈀(Pd)金屬氫化(palladium hydrogenation)法在Pd 電極上產生奈米裂隙 場發射結構，製作出表面傳導電子發射(surface conductive electron emission，SCE)元件， 探討其於表面傳導電子場發射平面顯示器技術(surface conduction electron emitter display，SED ) 的應用。當氫氣溶入Pd 金屬薄膜後，造成材料體積的增加，產生應變， 導致薄膜斷裂，於是形成了奈米裂隙，裂隙寬度及均勻性與SCE 元件結構設計、氫化 溫度與氫氣壓力有密切關係。本計畫的研究重點內容簡述如下： (一) SCE 元件的製程 步驟相當簡單，利用鍍膜，lift-off 微影與氫化製程便可在SCE 元件上形成奈米尺度的 場發射裂隙，但必須適當設計SCE 元件內Pd 電極薄膜結構與控制氫化條件，我們除 設計製作SCE 元件結構，並將探討最佳化的氫化條件，以形成適當的場發射奈米裂隙。 (二) SED 的顯像效能取決發射自閘極的電子數量，表面物化特性會顯著影響電子發射 效率，我們將進行Pd 電極表面改質，提升電子發射效率，如沉積非晶質碳與氧化銥披 覆層於Pd 電極上。(三)為了達成前兩項工作目標，我們將利用電腦模擬SCE 元件Pd 薄膜電極在氫化條件下的應力分佈，及閘極散射電子的發射軌跡，做為SCE 元件結構 設計與製程的參考。(四)為了探討氫化SCE 元件實際應用於SED 顯示器技術的可行 性，我們將進行SCE 元件的電性量測，點亮測試與可靠性研究。
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    Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii
    (2000-02-01)
    Tarntair, FG
    ;
    Hong, WK
    ;
    Ku, TK
    ;
    She, NJ
    ;
    Chen, CF
    Various types of ultra sharp Si microtips and multitips with carbon-clading films were fabricated by microwave plasma chemical vapor deposition (MPCVD). The radii of these Si tips prepared by bias assisted carburization (BAC) can he reduced below 300 Angstrom under a low deposition temperature (<550 degrees C). Field emission characterization was performed in a high vacuum environment. With an applied anode voltage of 1100 V, emission currents of 169 mu A, 198 mu A, and 385 mu A can be achieved from an array of 50 x 50 BAG-clad Si monotips, Si multitips via high bias, and Si multitips via the Ar presputtering technique, respectively. Both the auger electron spectroscopy (AES) and X-ray photo-electron spectroscopy (XPS) studies of the C l s peak suggest that the BAC-cladding is more likely to be a carbon-rich SiC layer or a SiC layer mixed with a small amount of diamond nuclei. This BAC-carbon can be used as an effective nucleation layer for further diamond nuclei. Due to the low field emission, low temperature, and large area growth capability, the sharp BAC-clad Si multitip field emitter arrays are attractive Tor flat panel display applications.
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    Field emission property of carbon nanotube field emitters in triode structure fabricated with anodic aluminum oxide templates
    (2008-04-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    Lin, Chen-Chun
    ;
    Pan, Fu-Ming
    ;
    材料科學與工程學系
    In this work, we study the field emission (FE) properties of carbon nanotubes (CNTs) field emitters in the triode structure fabricated with anodic aluminum oxide (AAO) template. To obtain the self-consistent solution, a set of Maxwell's equations coupling with Lorentz equation are solved simultaneously using finite difference time domain (FDTD) particle-in-cell (PIC) method. The FE current is then computed with the Fowler-Nordheim equation. To validate our simulation model, we firstly calibrate the collected electron current density between the measurement data of fabricated AAO-CNTs and simulation result. We find that the high density of CNTs will result in large screening effect among adjacent emitters and reduce the strength of electric field. Consequently, it significantly affects the collected emission current density. Our prediction shows that more than three-order magnitude difference on the collected emission current density could be observed when the spacing between CNTs is decreased from 0.7 to 0.233 mu m for the explored structure with the diameter of 7 mu m. Effects of random heights and thickness of oxide on the FE property of structure are also discussed.
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    Fabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arrays
    (2001-03-01)
    Chen, CF
    ;
    Tsai, CL
    ;
    Lin, CL
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    In this work, we present a novel scheme that involves a new fabrication process for gate-structured metal-insulator-semiconductor (MIS) diodes using IC technology. Using a bias-assisted microwave-plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped emitters completes this process. A comparison of the held emission characteristics of two types of non-doped dendrite-like and P-doped nanotube-like diamond emitters with a 4-mum gate aperture is made. Phosphorus doping can enhance the electrical characteristics by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped and P-doped emitters is 15 and 5 V, respectively. Phosphorus doping can enhance the electrical properties by increasing the emission current, since the field emission current (I-a) of non-doped and P-doped emitters is 4 muA (at V-gc = 45 V) and 322 muA (at V-gc = 120 V), respectively. The emission current of P-doped emitters is approximately 80-fold larger than that of non-doped diamond emitters. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Numerical simulation of field emission efficiency of anodic aluminum oxide carbon nanotube field emitter in the triode structure
    (2008-07-01)
    Li, Yiming
    ;
    Cheng, Hui-Wen
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    In this work, we study the field emission (FE) properties of carbon nanotubes (CNTs) field emitter in the triode structure fabricated with anodic aluminum oxide (AAO) template. To obtain the self-consistent solution, a set of two-dimensional Maxwell's equations coupling with Lorentz equation are solved with a finite difference time domain (FDTD) particle-in-cell (PIC) method. The FE current is then computed with the Fowler-Nordheim equation. Calculated result of the collected current density shows good agreement with the measured data for the fabricated sample. Effect of the height and number of CNTs on the collected electron current density is thus investigated. We find that the explored structure with few number of CNTs exhibit high current density due to insignificant screening effect. The current density is low and approaches to stable current level when the number of CNTs increases. The simulation further predicts that the structure with the height of CNTs = 0.42 mu m has a maximum current density. The FE efficiency (i.e., the collected electron current density/the emission current density) versus the number of CNTs is estimated. The explored AAO-CNTs triode structure maintains high FE efficiency (similar to 95%) with a nonzero gate voltage. (C) 2008 Elsevier B.V. All rights reserved.
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    Electronic properties of phosphorus-doped triode-type diamond field emission arrays
    (2001-11-01)
    Chen, CF
    ;
    Tsai, CL
    ;
    Lin, CL
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.