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Subject: search.filters.subject.field-induced drain

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Now showing 1 - 6 of 6
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    A novel thin-film transistor with self-aligned field induced drain
    (2001-01-01)
    Lin, HC
    ;
    Yu, CM
    ;
    Lin, CY
    ;
    Yeh, KL
    ;
    Huang, TY
    In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with their effective FID length set by two separate photolithographic masking layers, the new SAFID is totally immune to photomasking misalignment errors, while enjoying the low off-state leakage as well as high turn-on characteristics inherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio.
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    Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
    (2001-04-01)
    Lin, HC
    ;
    Yeh, KL
    ;
    Huang, RG
    ;
    Lin, CY
    ;
    Huang, TY
    A novel Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain (FID) extension is proposed and demonstrated. In the new device configuration, a metal field-plate (or sub-gate) lying on the passivation oxide is employed to induce a sheet of carriers in a channel offset region located between the silicided drain and the active channel region underneath the main-gate. The new device thus allows ambipolar device operation by simply switching the polarity of the bias applied to the field plate. In contrast to the conventional SBTFT that suffers from high GIDL (gate-induced drain leakage)-like off-state leakage current, the new SBTFT with FID is essentially free from the GIDL-like leakage current. In addition, unlike the conventional SBTFT that suffers from the low on-off current ratio, the new device exhibits high on/off current ratio up to 10(6) for both n- and p-channel modes of operation. Moreover, the implantless feature and the ambipolar capability of the new device also result in extra low mask count for CMOS processes integration. These excellent device characteristics, coupled with its simple processing, make the new device very promising for future large-area electronic applications.
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    Item type:Item,
    Ambipolar Schottky-barrier TFTs
    (2002-02-01)
    Lin, HC
    ;
    Yeh, KL
    ;
    Huang, TY
    ;
    Huang, RG
    ;
    Sze, SM
    A novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and characterized. The new SBTFT device features a fleld-induced-drain (FID) region, which is controlled by a metal field-plate lying on top of the passivation oxide. The FED region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. The device is thus capable of ambipolar operation. Excellent ambipolar performance with on/off current ratios over 10(6) for both p- and n-channel operations was realized simultaneously on the same device fabricated with polysilicon active layer. Moreover, the off-state leakage current shows very weak dependence on the gate-to-drain voltage difference with the FID structure. Finally, the effects of FED length are explored.
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    Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
    (2002-05-01)
    Yu, M
    ;
    Lin, HC
    ;
    Chen, GH
    ;
    Huang, TY
    ;
    Lei, TF
    Characteristics of polycrystalline silicon thin-film transistors (TFT) with source/drain extensions induced by a bottom sub-gate were explored, high on/off current ratio up to 10(7) could be achieved for both n- and p-channel devices. Nevertheless, the performance is significantly degraded by a marked increase of off-state leak-age current when the channel length is scaled below 1 mum. Moreover, a hump in the subthreshold current-voltage regime is observed. After careful analysis, it is found that the leakage current is strongly dependent on the field strength and is not a thermally activated process. A leakage path along the bottom interface of the poly-Si channel layer is proposed to explain these results.
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    Self-aligned fabrication of thin-film transistors with field-induced drain
    (2002-08-01)
    Yu, CM
    ;
    Lin, HC
    ;
    Lin, CY
    ;
    Yeh, KL
    ;
    Huang, TY
    Thin-film transistor (TFT) devices with either a top or a bottom sub-gate were fabricated and characterized. The top sub-gate scheme allows the self-aligned formation of main-gate with respect to the sub-gate. On the other hand, the bottom sub-gate scheme features a self-aligned field-induced drain with a sidewall spacer located on its top to set the effective field-induction-drain (FID) length. Unlike the conventional TFTs, the FID serves to distribute the high drain electric field and thereby eliminates gate-induced drain leakage-like off-state leakage current. Superior device performance is realized with the bottom sub-gate structure. (C) 2002 Elsevier Science Ltd. All rights reserved.
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    Item type:Item,
    Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
    (2003-02-01)
    Lin, HC
    ;
    Wang, MF
    ;
    Lu, CY
    ;
    Huang, TY
    ;
    電子工程學系及電子研究所
    A novel Schottky barrier silicon-on-insulator metal-oxide-semiconductor field-effect transistor featuring metallic source/drain and an electrical drain junction has been fabricated and characterized. The formation of electrical drain junction, or the field-induced drain (FID), is controlled by a metal field-plate overlying the passivation oxide. Excellent ambipolar operation is demonstrated on the device. Specifically, on/off current ratios up to 10(8) and 10(7) are observed for p- and n-channel operations, respectively. Meanwhile, the off-state leakage current shows very weak dependence on the voltage difference between the main-gate and the drain, highlighting the effectiveness of FID. Finally, negative differential conductance effect is observed for n-channel operation, which is identified as due to dynamic hot electron trapping during device characterization. (C) 2002 Elsevier Science Ltd. All rights reserved.