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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.flexible electronics

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Now showing 1 - 10 of 18
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    Proton-Mediated Phase Control in Flexible and Transparent Mott Transistors
    (1970-01-01)
    Deng, Xing
    ;
    Zhao, Yi-Feng
    ;
    Zhong, Ni
    ;
    Yue, Fang-Yu
    ;
    Huang, Rong
    To meet the development of wearable and energy-efficient flexible electronics, multifunctional oxide film on soft substrate and its versatile phase control are in demand. Here, flexible VO2 film is directly deposited on mica via van der Waals epitaxy, exhibiting pronounced metal-insulator (MI) transition and infrared (IR) switching properties. Using a rubbery solid ionic gel as gate insulator, a fully flexible and transparent VO2-channel Mott transistor is successfully demonstrated. The prototype Mott transistor processes excellent mechanical flexibility and giant on/off current ratio of approximate to 10(5)% even at room temperature. Highly reversible suppression of MI transition is realized by applying small gate voltages and the nonvolatile phase modulation suggests an electrochemical reaction mechanism. X-ray diffraction and secondary-ion mass spectroscopy analyses, together with theoretical calculation, confirm that electrically controlled phase transformation is mainly caused by reversible and nonvolatile proton (H+) doping into VO2 lattices. Significant modulation of IR transmittance (>40%) is observed in the VO2 Mott transistor, which is attributed to electrically driven phase transition between insulating VO2 and metallic HxVO2 phases. The flexible and transparent Mott transistor provides a good platform for proton-mediated Mottronics and realizes novel electric control of optical characteristics, showing a promising application for flexible energy-saving smart windows.
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    Enhanced Ferroelectric Functionality in Flexible Lead Zirconate Titanate Films with In Situ Substrate-Clamping Compensation
    (1970-01-01)
    Winestook, Rachel Onn
    ;
    Saguy, Cecile
    ;
    Ma, Chun-Hao
    ;
    Chu, Ying-Hao
    ;
    Ivry, Yachin
    Much attention has recently been given to flexible and wearable integrated electronic devices, with a strong emphasis on real-time sensing, computing, and communication technologies. Thin ferroelectric films exhibit switchable polarization and strong electromechanical coupling, and hence are in widespread use in such technologies, albeit not when flexed. Effects of extrinsic strain on thin ferroelectric films are still unclear, mainly due to the lack of suitable experimental systems that allow cross structural-functional characterization with in situ straining. Moreover, although the effects of intrinsic strain on ferroelectric films, e.g., due to film-substrate lattice mismatch, have been extensively investigated, it is unclear how these effects are influenced by external strain. A method to strain thin films homogenously in situ is developed, allowing structural characterization as well as functional switching and piezorsponse measurements at the nanoscale, while retaining the sample under constant straining conditions. Using this method, thin films of PbZr0.2Ti0.8O3, which were grown on a flexible mica substrate, are strained to reduce substrate clamping effects and increase the tetragonality. Consequently, the domain stability is increased, the coercive field value is decreased, and imprint effects are reduced. This method also allows direct characterization of the relationship between the lattice parameters and nanoscale properties of other flexible materials.
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    Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics
    (2019-03-27)
    Singh, Eric
    ;
    Singh, Pragya
    ;
    Kim, Ki Seok
    ;
    Yeom, Geun Young
    ;
    Nalwa, Hari Singh
    Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS2) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS2 atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS2 atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS2 FETs by integrating high-K dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS2 device structures. The photoluminescence (PL) of MoS2 atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS2 transistors. The review discusses the overall recent progress made in developing MoS2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.
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    Development of magnetoelectric nanocomposite for soft technology
    (2018-06-13)
    Bitla, Yugandhar
    ;
    Chu, Ying-Hao
    ;
    材料科學與工程學系
    ;
    電子物理學系
    ;
    國際半導體學院
    The proliferation of flexible and stretchable electronics has led to substantial advancements in principles, material combinations and technologies. The integration of magnetoelectric systems in soft electronics is inevitable by virtue of their extensive applications. Recently, 2D layered materials have emerged as potential candidates due to their excellent flexibility and atomic-scale thickness scalability in addition to their interesting physics. This paper presents a new perspective on the development of magnetoelectric nanocomposites through materials engineering on a pliant mica with excellent mechanical, thermal and chemical stabilities. The unique features of 2D muscovite mica and the power of van der Waals epitaxy are expected to contribute significantly to the emerging transparent soft-technology research applications.
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    Oxide Heteroepitaxy for Flexible Optoelectronics
    (2016-11-30)
    Bitla, Yugandhar
    ;
    Chen, Ching
    ;
    Lee, Hsien-Chang
    ;
    Do, Thi Hien
    ;
    Ma, Chun-Hao
    The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite\'s superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.
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    Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics
    (2016-12-14)
    Wu, Ping-Chun
    ;
    Chen, Ping-Fan
    ;
    Thi Hien Do
    ;
    Hsieh, Ying-Hui
    ;
    Ma, Chun-Hao
    Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe3O4 film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe3O4/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe3O4. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe3O4/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.
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    二維層狀過渡金屬硫化物於綠能及可撓式電子之應用
    (2015)
    侯拓宏
    ;
    Hou Tuo-Hung
    ;
    國立交通大學電子工程學系及電子研究所
    今日幾乎所有電子元件皆利用三維(3D)半導體為材料，但自從石墨烯(Graphene)於2004年被發現後，電子元件的設計上有了另一種全新的材料選擇：二維(2D)層狀材料，緊接著石墨烯之後，各式二維層狀材料如氮化硼(BN)，二硫化鉬 (MoS2)、二硫化鎢(WS2)、二硒化鉬(MoSe2)、二硒化鎢 (WSe2)，二硒化鈮(NbSe2)亦被發展出來，這些材料因為本身的低維度特性，產生了許多前所未見的載子傳輸、光學、光電、電子自旋、機械結構等性質，為目前物理及材料界積極研究的重要領域，其中過渡金屬硫化物(Transition Metal Dichalcogenides; TMD)因具備適當能隙，特別適合應用於固態電子元件中。但二維層狀TMD是否能取代或互補現有的三維晶體材料，提供電子元件與電路持續微縮的新動能，目前仍未有定論。本計畫希望在「國科會吳大猷先生紀念獎研究計畫」的鼓勵支持下，建立我們團隊在新穎二維層狀TMD於低功耗綠能及可撓式電子元件應用的研究動能，將基礎科學領域發展出的新材料與物理特性，導入固態電子工程領域應用，改善元件特性與功能性。 本計畫規畫以三年的時間投入包含高性能超薄體電晶體、垂直型穿隧式電晶體(TFET)、與可撓式光感應電晶體等重要固態電子元件開發。過去我們的研究團隊在氧化物薄膜電晶體與可撓式電子元件開發上有豐富的經驗，對我們快速進入此全新領域有很大的助益。我們已與中央研究院原子與分子科學研究所李連忠博士所領導的材料合成團隊建立良好的合作夥伴關係，目前成功地在大面積二硫化鉬與二硒化鎢上製作出具良好特性之n型與p型TMD超薄體電晶體，具有高於六個數量級的電流開關比，在此基礎上，我們將系統性地研究如何提升可應用於未來綠能電子中的TMD超薄體電晶體特性。我們也將研究利用TMD異質接面結構的垂直型穿隧式電晶體，期待能較傳統場效電晶體在功耗與性能上皆有所提升。我們也將利用二維層狀TMD適合移轉至任意基板的優點，開發其在可撓式電子，例如光感應式非接觸互動螢幕等應用。
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    軟性透明a-IGZO薄膜電晶體之前瞻研究
    (2008)
    蔡娟娟
    ;
    Tsai Chuang-Chuang
    ;
    國立交通大學光電工程學系(所)
    本計劃預計以三年時間，開發高效能、高穿透率非晶氧化物半導體（amorphous oxide semiconductor）的薄膜電晶體。研究元件電極接面、通道區域/閘極絕緣層介面特性、 與元件結構對電晶體效能的影響，並進行一系列的可靠度分析。在本計劃初期，藉由低 溫濺鍍法製作非晶氧化物薄膜，利用濺鍍氣體分壓的調控及沉積溫度來改變薄膜特性， 研究薄膜成份、晶相對於載子濃度與電特性的影響，並分析沉積條件對於穿透率等相關 光特性的影響。根據初期研究的成果，開發非晶氧化物薄膜電晶體，並針對電極接面與 閘極絕緣層接面進行改質。在研究中，我們將利用氧組成的調控對上述區域進行改質處 理， 並輔以元件結構的設計、與源極（ Source ） 汲極（ Drain ） 的重新配置 （re-configuration）提升元件效能，並以四端點探針量測來驗證上述的結果。最後， 以本計畫開發的高效能元件來研究非晶氧化合物載子傳輸的機制，並對該高效能元件進 行可靠度分析。利用熱應力（thermal stress）、電偏壓應力（bias stress）、與光浸 潤（light soaking）來加速元件退化，研究元件的可靠度與退化的物理機制。尋找影 響非晶氧化合物元件退化的關鍵因素，以期提升元件長時間的穩定性。
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    軟性透明a-IGZO薄膜電晶體之前瞻研究
    (2009)
    蔡娟娟
    ;
    Tsai Chuang-Chuang
    ;
    國立交通大學光電工程學系(所)
    本計劃預計以三年時間，開發高效能、高穿透率非晶氧化物半導體（amorphous oxide semiconductor）的薄膜電晶體。研究元件電極接面、通道區域/閘極絕緣層介面特性、 與元件結構對電晶體效能的影響，並進行一系列的可靠度分析。在本計劃初期，藉由低 溫濺鍍法製作非晶氧化物薄膜，利用濺鍍氣體分壓的調控及沉積溫度來改變薄膜特性， 研究薄膜成份、晶相對於載子濃度與電特性的影響，並分析沉積條件對於穿透率等相關 光特性的影響。根據初期研究的成果，開發非晶氧化物薄膜電晶體，並針對電極接面與 閘極絕緣層接面進行改質。在研究中，我們將利用氧組成的調控對上述區域進行改質處 理， 並輔以元件結構的設計、與源極（ Source ） 汲極（ Drain ） 的重新配置 （re-configuration）提升元件效能，並以四端點探針量測來驗證上述的結果。最後， 以本計畫開發的高效能元件來研究非晶氧化合物載子傳輸的機制，並對該高效能元件進 行可靠度分析。利用熱應力（thermal stress）、電偏壓應力（bias stress）、與光浸 潤（light soaking）來加速元件退化，研究元件的可靠度與退化的物理機制。尋找影 響非晶氧化合物元件退化的關鍵因素，以期提升元件長時間的穩定性。
  • Thumbnail Image
    Item type:Item,
    軟性透明a-IGZO薄膜電晶體之前瞻研究
    (2010)
    蔡娟娟
    ;
    Tsai Chuang-Chuang
    ;
    國立交通大學光電工程學系（所）
    本計劃預計以三年時間，開發高效能、高穿透率非晶氧化物半導體（amorphous oxide semiconductor）的薄膜電晶體。研究元件電極接面、通道區域/閘極絕緣層介面特性、 與元件結構對電晶體效能的影響，並進行一系列的可靠度分析。在本計劃初期，藉由低 溫濺鍍法製作非晶氧化物薄膜，利用濺鍍氣體分壓的調控及沉積溫度來改變薄膜特性， 研究薄膜成份、晶相對於載子濃度與電特性的影響，並分析沉積條件對於穿透率等相關 光特性的影響。根據初期研究的成果，開發非晶氧化物薄膜電晶體，並針對電極接面與 閘極絕緣層接面進行改質。在研究中，我們將利用氧組成的調控對上述區域進行改質處 理， 並輔以元件結構的設計、與源極（ Source ） 汲極（ Drain ） 的重新配置 （re-configuration）提升元件效能，並以四端點探針量測來驗證上述的結果。最後， 以本計畫開發的高效能元件來研究非晶氧化合物載子傳輸的機制，並對該高效能元件進 行可靠度分析。利用熱應力（thermal stress）、電偏壓應力（bias stress）、與光浸 潤（light soaking）來加速元件退化，研究元件的可靠度與退化的物理機制。尋找影 響非晶氧化合物元件退化的關鍵因素，以期提升元件長時間的穩定性。