🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 5 of 5

V-band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplers
(2017-01-01)
Chang, Wei-Ling
;
Su, Jen-Yi
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Huang, Guo-Wei
A V-band balanced two-stage power amplifier MMICs with Lange couplers is demonstrated using 0.15 mu m GaAs pHEMT technology in this paper. A CPWG-MS-CPWG topology with via holes at the transistors as the transition between coplanar waveguide with backside ground (CPWG) and microstrip (MS) is employed for the two-stage amplifier. CPWG is applied to realize the flip-chip transition interface for both input and output ports of the amplifier and inter-stage MS matching has the advantage of small size. The structure parameters of the CPWG Lange coupler and matching network are designed and optimized for power combining. Finally, a 60-GHz balanced two-stage power amplifier using a CPWG-MS-CPWG structure delivers the small signal gain of 18 dB, OP1dB of 12 dBm and P-sat of 15 dBm.
Design of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to V-Band Frequencies With Excellent Reliability
(2010-08-01)
Hsu, Li-Han
;
Wu, Wei-Cheng
;
Chang, Edward Yi
;
Zirath, Herbert
;
Hu, Yin-Chu
This study demonstrates a flip-chip interconnect with epoxy-based underfill (epsilon(r) = 3.5 and tan delta = 0.02 at 10 MHz) for packaging applications up to V-band frequencies. To achieve the best interconnect performance, both the matching designs on GaAs chip and Al(2)O(3) substrate were adopted with the underfill effects taken into consideration. The optimized flip-chip interconnect showed excellent performance from dc to 67 GHz with return loss below -20 dB and insertion loss less than 0.6 dB. Furthermore, the dielectric loss induced by the underfill was extracted from measurement and compared with the simulation results. The reliability tests including 85 degrees C/85 % relative humidity test, thermal cycling test, and shear force test were performed. For the first time, the S-parameters measurement was performed to check the flip-chip reliability, and no performance decay was observed after 1000 thermal cycles. Moreover, the mechanical strength was improved about 12 times after the underfill was applied. The results show that the proposed flip-chip architecture has excellent reliability and can be applied for commercial applications.
High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness
(2007-03-01)
Huang, H. W.
;
Kuo, H. C.
;
Lai, C. F.
;
Lee, C. E.
;
Chiu, C. W.
We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2-SiO2 onmidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm vias integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and. photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm x 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2-SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.
Heterogeneous Chip Integration Process for Flexible Wireless Microsystem Application
(2011-03-01)
Chao, Tzu-Yuan
;
Liang, Chia-Wei
;
Cheng, Y. T.
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
This paper presents a low-cost heterogeneous integration technology combining the previously developed bumpless radio-frequency (RF) system-on-a-package scheme with a special surface cleaning process to assemble a complementary metal-oxide-semiconductor chip with an organic substrate (SU-8/polydimethylsiloxane) by low-temperature Au-Au thermocompressive bonds (< 200 degrees C) for flexible wireless microsystem fabrication. The RF performance of -15 dB return loss and -0.25 dB insertion loss at 40 GHz and above 6 MPa bonding strength of a microstrip-to-coplanar-waveguide interconnect transition between the chip and the substrate make the technology practical for flexible wireless microsystem integration.
Design, Fabrication, and Characterization of Novel Vertical Coaxial Transitions for Flip-Chip Interconnects
(2009-05-01)
Wu, Wei-Cheng
;
Chang, Edward Yi
;
Hwang, Ruey-Bing
;
Hsu, Li-Han
;
Huang, Chen-Hua
In this paper, a novel transition design using vertical "coaxial transition" for coplanar waveguide (CPW-to-CPW) flip-chip interconnect is proposed and presented for the first time. The signal continuity is greatly improved since the coaxial-type transition provides more return current paths compared to the conventional transition in the flip-chip structure. The proposed coaxial transition structure shows a real coaxial property from the 3-D electromagnetic wave simulation results. The design rules for the coaxial transition are presented in detail with the key parameters of the coaxial transition structure discussed. For demonstration, the back-to-back flip-chip interconnect structures with the vertical coaxial transitions have been successfully fabricated and characterized. The demonstrated interconnect structure using the coaxial transition exhibits the return loss below 25 dB and the insertion loss within 0.4 dB from dc to 40 GHz. Furthermore, the measurement and simulation results show good agreement. The novel coaxial transition demonstrates excellent interconnect performance for flip-chip interconnects and shows great potential for flip-chip packaging applications at millimeter waves.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results