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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.flip-chip (FC)

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Now showing 1 - 3 of 3
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    Item type:Item,
    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
  • Thumbnail Image
    Item type:Item,
    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
  • Thumbnail Image
    Item type:Item,
    Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector
    (2006-09-01)
    Lin, C. H.
    ;
    Lai, C. F.
    ;
    Ko, T. S.
    ;
    Huang, H. W.
    ;
    Kuo, H. C.
    Enhancement of light extraction of GaN-based flip-chip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an onmidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm x 1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITO LED with the ODR shows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.