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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 6 of 6
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    Item type:Item,
    Interrelation of transport and optical properties in gold nanoclusters
    (2010-09-20)
    Shu, G. W.
    ;
    Chen, T. Y.
    ;
    Shen, J. L.
    ;
    Lin, C. A. J.
    ;
    Chang, W. H.
    Temperature dependence of the electrical conductivity and photoluminescence (PL) in Au nanoclusters (NCs) is investigated. The correlation of the conductivity and PL in Au NCs at different temperatures is evident: (i) for T < 50 K, both the conductivity and PL intensity decrease with temperature, which suggests thermal structural fluctuations; (ii) for 50 K < T < 90 K, conductivity and PL are explained by variable range hopping; (iii) for 90 K < T < 170 K, simple thermal activated hopping dominates in conductivity, with a rate-equation model proposed to analyze the carrier transfer in PL. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491288]
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    Item type:Item,
    Graphically Transforming Mueller-Schulz Percolation Criteria to Random Telegraph Signal Magnitudes in Scaled FETs
    (2015-03-01)
    Chen, Ming-Jer
    ;
    Tu, Kong-Chiang
    ;
    Chuang, Li-Yang
    ;
    Wang, Huan-Hsiung
    ;
    電子工程學系及電子研究所
    We propose a novel graphic method to enable the analysis of the field-effect transistor (FET) threshold voltage variation Delta V-th due to random telegraph signals in a percolative channel. First, through technology computer-aided design simulation with no percolation, both a minimum Delta V-th and a critical curve in a m(loc) - sigma(loc) plot are produced. The former constitutes a statistical distribution far away from the conventional log-normal one. In the latter, m(loc) and sigma(loc) are the mean and the standard deviation, respectively, of a well-known normal variable in Mueller-Schulz\'s percolation theory. The critical m(loc) - sigma(loc) curve divides the plot into the allowed region and the forbidden region and will go down with increasing gate size. Then, Delta V-th contours in the allowed region are graphically created. While applying to existing experimental Delta V-th statistical distributions of SiON- and high-k metal gate (HKMG)-scaled FETs, resulting paired m(loc) and sigma(loc) at high Delta V-th remain intact, regardless of gate size or gate stack type. This means that the underlying percolation patterns resemble each other, due to the same manufacturing process used. However, if these paired m(loc) and sigma(loc) fall in the forbidden region, it is the critical m(loc) - sigma(loc) curve dominating. Application to bias and temperature instability statistical data in literature is straightforwardly well done.
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    Criteria for Plasmon-Enhanced Electron Drag in Si Metal-Oxide-Semiconductor Devices
    (2015-03-01)
    Chen, Ming-Jer
    ;
    Hsieh, Shang-Hsun
    ;
    Liao, Yu-Chiao
    ;
    Chen, Chuan-Li
    ;
    Tsai, Ming-Fu
    Plasmons in the highly doped source and drain regions of silicon field-effect transistors can strongly drag channel electrons via long-range collective Coulomb interactions and cause deteriorations in overall device performances. To examine such interactions, two different methods have been published: 1) sophisticated device simulations and 2) carefully calibrated experiments. To provide a more transparent understanding, we propose a third method in terms of two criteria: 1) one for the occurrence of the plasmon resonance and 2) the other for the strength of the plasmons. The former is determined based on our published dragged mobility data due to the interface plasmons and the bulk plasmons in gate. The latter makes use of our more recently experimentally extracted potential fluctuations due to plasmons in crystalline silicon. The effects of the temperature on the criteria are considered. It is a straightforward task to confirm that for a channel density larger than approximately 5 x 10(12) cm(-2), the source and drain plasmons act as key limiters in silicon device scaling. Therefore, the underlying device physics, modeling, simulations, experimental analyses, and data interpretation may be inaccurate if the limiting factors are not incorporated.
  • Thumbnail Image
    Item type:Item,
    Interrelation of transport and optical properties in gold nanoclusters
    (2010-09-20)
    Shu, G. W.
    ;
    Chen, T. Y.
    ;
    Shen, J. L.
    ;
    Lin, C. A. J.
    ;
    Chang, W. H.
    Temperature dependence of the electrical conductivity and photoluminescence (PL) in Au nanoclusters (NCs) is investigated. The correlation of the conductivity and PL in Au NCs at different temperatures is evident: (i) for T < 50 K, both the conductivity and PL intensity decrease with temperature, which suggests thermal structural fluctuations; (ii) for 50 K < T < 90 K, conductivity and PL are explained by variable range hopping; (iii) for 90 K < T < 170 K, simple thermal activated hopping dominates in conductivity, with a rate-equation model proposed to analyze the carrier transfer in PL. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491288]
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    Item type:Item,
    Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon
    (2014-07-01)
    Chen, Ming-Jer
    ;
    Chen, Chuan-Li
    ;
    Hsieh, Shang-Hsun
    ;
    Chang, Li-Ming
    ;
    電子工程學系及電子研究所
    Well-known apparent electrical silicon bandgap narrowing in a heavily doped region of a bipolar transistor is observed by means of an enhanced minority-carrier injection experiment. In the region of interest, plasmons-induced potential fluctuations are existent in nature and hence constitute the origin of apparent bandgap narrowing. In this letter, we extract the underlying potential fluctuations directly from the enhanced minority-carrier injection experiment published in the literature. The core of the extraction lies in a combination of the two existing theoretical frameworks. First, the Gaussian distribution can serve as a good approximation of potential fluctuations. Second, no change can be made in the real bandgap between fluctuating conduction-and valence-band edges. Extracted potential fluctuations come from plasmons, as verified by our published temperature dependences of plasmons limited mobility in the inversion layer of MOSFETs as well as theoretical calculation results on bulk silicon. More importantly, this letter can deliver potential applications in the modeling and simulation area of nanoscale FETs (MOSFETs, FinFETs, and so forth) and bulk semiconductors.
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    Thermal fluctuations and disorder effect on the square-rhombic structural phase transition of the vortex lattice in tetragonal superconductors
    (2006)
    Lin, Fareh PeiJen
    ;
    Knigavko, Anton
    ;
    Li, DingPing
    ;
    Rosenstein, Baruch
    ;
    電子物理學系
    Influence of the thermal fluctuations and weak disorder on the square--rhombic transition of the vortex lattice in tetragonal superconductors is investigated using the Ginzburg Landau approach which is valid near the H-c2(T) line. In both cases the phase transition line in the T-H plane shifts in a way that makes the region occupied by the more symmetric square phase larger.