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Subject: search.filters.subject.heteroepitaxy

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Now showing 1 - 8 of 8
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    Flexible Heteroepitaxy Photoelectrode for Photo-electrochemical Water Splitting
    (2018-08-01)
    Le Thi Quynh
    ;
    Chien Nguyen Van
    ;
    Tzeng, W. Y.
    ;
    Huang, Chun-Wei
    ;
    Lai, Yu-Hong
    MICAtronics represents a new research direction by taking the advantages of good mechanical flexibility and optical transparency of muscovite mica, leading to a new platform to use oxide heteroepitaxy for novel transparent soft technology. Here we report a model flexible photoelectrode for photo-electrochemical (PEC) water splitting based on Fe2O3/ZnO/mica heteroepitaxy. The heteroepitaxy was confirmed by a combination of X-ray diffraction and transmission electron microscopy. The PEC performance of this flexible and semitransparent photoelectrode under various bending states was investigated. We found that the photocurrent of the heteroepitaxial system was enhanced by three times relative to pure ZnO and Fe2O3 under visible-light irradiation, and the heteroepitaxial photoelectrodes retain their photocurrent after continuous bending in cycling (>3000 cycles) with a smallest bending radius of 3.5 mm. The energy band alignment and charge dynamics under light excitation were characterized to understand the mechanism of the enhanced PEC performance. This study provides a new platform for design and fabrication of a flexible transparent photoelectrode in the harvest of solar energy based on oxide heteroepitaxy.
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    Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
    (2019-07-24)
    Tsai, Meng-Fu
    ;
    Jiang, Jie
    ;
    Shao, Pao-Wen
    ;
    Lai, Yu-Hong
    ;
    Chen, Jhih-Wei
    With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zro7Ti0.3)03 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.
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    Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
    (1997-09-01)
    Tsai, WC
    ;
    Chang, CY
    ;
    Jung, TG
    ;
    Chang, TC
    ;
    Lin, HC
    High-quality Si/Si1-xGex strained-layer superlattices have been grown in the temperature range 525 degrees C-550 degrees C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si1-xGex superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1nm for growth at 525 degrees C and 0.2nm for growth at 550 degrees C. A simple model for estimating the interfacial abruptness of Si/Si1-xGex heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si1-xGex interfaces. The Ge composition x of a Si/Si1-xGex superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3-0.7nm for growth at 525 degrees C and 1-1.5nm for growth at 550 degrees C.
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    Atomic Heterointerfaces and Electrical Transportation Properties in Self-Assembled LaNiO3-NiO Heteroepitaxy
    (2018-04-09)
    Zhu, Yuan Min
    ;
    Thi Hien Do
    ;
    Vu Thanh Tra
    ;
    Yu, Rong
    ;
    Chu, Ying-Hao
    Vertical nanostructure heteroepitaxy opens new opportunities for designing next-generation electronic devices due to the enthralling multifunction combinations and the abundant heterointerfaces manipulated effects. In this study, self-assembled heteroepitaxial thin films, vertically aligned metallic LaNiO3 (LNO) and semiconducting NiO with diverse heterointerfaces, are created and systematically investigated by advanced transmission electron microscopy. With the increase of LaNiO3 content, the LaNiO3 phases present as isolated islands encircled by the connected NiO nanoplates and eventually become the continuous matrix with embedded NiO nanopillars. The atomic heterointerface between NiO and LaNiO3 phases is determined to be [NiO2-LaO](LaNiO3)-LaO-[NiO](NiO), in which an extra La-O layer is enriched at the heterointerface. Besides, the formation mechanism of the heterointerface and antiphase boundaries observed in LaNiO3 phase is discussed. The electrical transport properties at room temperature can be tuned gradually by changing the volume ratio of constituents. The correlation among the insulator-to-metal transition, the carrier types associated with transport behaviors, and the heterostructure evolutions are explored. This study offers a desirable platform to design new multifunctional electronic devices based on the oxide heterojunctions.
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    Oxide Heteroepitaxy for Flexible Optoelectronics
    (2016-11-30)
    Bitla, Yugandhar
    ;
    Chen, Ching
    ;
    Lee, Hsien-Chang
    ;
    Do, Thi Hien
    ;
    Ma, Chun-Hao
    The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite\'s superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.
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    Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics
    (2016-12-14)
    Wu, Ping-Chun
    ;
    Chen, Ping-Fan
    ;
    Thi Hien Do
    ;
    Hsieh, Ying-Hui
    ;
    Ma, Chun-Hao
    Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe3O4 film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe3O4/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe3O4. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe3O4/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.
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    Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition
    (2000-04-01)
    Chang, L
    ;
    Yan, JE
    ;
    Chen, FR
    ;
    Kai, JJ
    ;
    材料科學與工程學系
    Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H-2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond [110]//6H-SiC [11 (2) over bar 0]. (C) 2000 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
    (1997-09-01)
    Tsai, WC
    ;
    Chang, CY
    ;
    Jung, TG
    ;
    Chang, TC
    ;
    Lin, HC
    High-quality Si/Si1-xGex strained-layer superlattices have been grown in the temperature range 525 degrees C-550 degrees C by ultrahigh vacuum chemical vapor deposition. We employed X-ray reflection and high-resolution double-crystal X-ray diffraction measurements to study the dimensional and compositional variations in a Si/Si1-xGex superlattice. From the X-ray reflection results, the interfacial roughness of Si layers on SiGe, and SiGe layers on Si, is 0.1nm for growth at 525 degrees C and 0.2nm for growth at 550 degrees C. A simple model for estimating the interfacial abruptness of Si/Si1-xGex heterojunctions is proposed. In this model, a transition region with a linearly graded Ge composition is assumed to exist at both Si/Si1-xGex interfaces. The Ge composition x of a Si/Si1-xGex superlattice is found to increase with the growth time at a constant gas phase composition. This phenomenon can be explained by this model, and the thickness of the transition region and the transition time can be extracted from these fitting results. The transition thicknesses are found to be about 0.3-0.7nm for growth at 525 degrees C and 1-1.5nm for growth at 550 degrees C.