<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2009 - 200912010 - 20143

Settings

🏛️國立陽明交通大學機構典藏

Subject: search.filters.subject.high-electron mobility transistors (HEMTs)

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
  • Thumbnail Image
    Item type:Item,
    Ka-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling Points
    (2014-01-01)
    Chang, Wei-Ling
    ;
    Meng, Chinchun
    ;
    Syu, Jin-Siang
    ;
    Wu, Yan-Feng
    ;
    Huang, Guo-Wei
    A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.
  • Thumbnail Image
    Item type:Item,
    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
  • Thumbnail Image
    Item type:Item,
    Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
    (2009-03-01)
    Chang, Chia-Ta
    ;
    Hsiao, Shih-Kuang
    ;
    Chang, Edward Yi
    ;
    Lu, Chung-Yu
    ;
    Huang, Jui-Chien
    This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. is phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is, likely due to the additional donorlike surface states created through the piezoelectric effect.