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Subject: search.filters.subject.intermetallic compounds

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Now showing 1 - 5 of 5
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    Formation Mechanism of Porous Cu3Sn Intermetallic Compounds by High Current Stressing at High Temperatures in Low-Bump-Height Solder Joints
    (2016-01-01)
    Lin, Jie-An
    ;
    Lin, Chung-Kuang
    ;
    Liu, Chen-Min
    ;
    Huang, Yi-Sa
    ;
    Chen, Chih
    Electromigration tests of SnAg solder bump samples with 15 m bump height and Cu under-bump-metallization (UBM) were performed. The test conditions were 1.45 x 10(4) A/cm(2) at 185 degrees C and 1.20 x 10(4) A/cm(2) at 0 degrees C. A porous Cu3Sn intermetallic compound (IMC) structure was observed to form within the bumps after several hundred hours of current stressing. In direct comparison, annealing alone at 185 degrees C will take more than 1000 h for porous Cu3Sn to form, and it will not form at 170 degrees C even after 2000 h. Here we propose a mechanism to explain the formation of this porous structure assisted by electromigration. The results show that the SnAg bump with low bump height will become porous-type Cu3Sn when stressing with high current density and high temperature. Polarity effects on porous Cu3Sn formation is discussed.
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    Effect of Sn Grain Orientation on Formation of Cu6Sn5 Intermetallic Compound Under Current Stressing
    (2017-04-01)
    Chen, Ming-Yao
    ;
    Lin, Han-wen
    ;
    Chen, Chih
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Solder joints with Cu/Sn-Ag/Cu structure and bump height of 15 mu m have been used to investigate the electromigration phenomenon at different temperatures and current densities. Moreover, the grain orientation was analyzed using electron backscatter diffraction. It was found that the anisotropic properties of tin affected the formation rate of Cu-Sn intermetallic compounds (IMCs), and that the angle between the electron flow direction and tin grain orientation played an important role in the formation of Cu6Sn5 IMC. With changes in angle, the diffusion rate of copper atoms in tin also varied. When the c-axis of tin was parallel to the electron flux, copper atoms diffused rapidly, resulting in fast formation of Cu-Sn IMCs. On the other hand, if the angle between the c-axis of the grain and the electron flow direction was large, the tin grains were more resistant to Cu diffusion during current stressing, leading to a very slow IMC formation rate.
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    Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
    (2003-09-01)
    Liang, MW
    ;
    Hsieh, TE
    ;
    Chang, SY
    ;
    Chuang, TH
    ;
    材料科學與工程學系
    The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250degreesC and 400degreesC by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) eta-(Cu0.99Au0.01)(6)Sn(5/)delta-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)(6)Sn-5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm(2) could be attained under the bonding condition of 300degreesC for 20 min.
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    Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization
    (2003-11-01)
    Hsu, YC
    ;
    Shao, TL
    ;
    Yang, CJ
    ;
    Chen, C
    ;
    材料科學與工程學系
    This paper investigates the electromigration-induced failures of SnAg3.8Cu0.7 flip-chip solder joints. An under-bump metallization (UBM) of a Ti/Cr-Cu/Cu trilayer was deposited on the chip side, and a Cu/Ni(P)/Au pad was deposited on the BT board side. Electromigration damages were observed in the bumps under a current density of 2 x 10(4) A/cm(2) and 1 x 10(4) A/cm(2) at 100 degreesC and 150 degreesC. The failures were found to be at the cathode/chip side, and the current crowding effect played an important role in the failures. Copper atoms were found to move in the direction of the electron flow to form intermetallic compounds (IMCs) at the interface of solder and pad metallization as a result of current stressing.
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    An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W, P) Layer to Lead-Free SnBi Solder
    (2011-03-01)
    Pan, Hung-Chun
    ;
    Hsieh, Tsung-Eong
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diffusion barrier characteristics for eutectic SnBi solder/electroless Co(W,P) couples were investigated via liquid-state aging at 250 degrees C and solid-state aging at 120 degrees C. At the couple interface, CoSn(3) intermetallic compound (IMC) spallation was observed for the SnBi/amorphous Co(W,P) couple subjected to liquid-state aging. In contrast, no spallation of IMCs was observed for the SnBi/amorphous Co(W,P) couples subjected to solid-state aging. For the SnBi/polycrystalline Co(W,P) couple, a thick IMC layer was observed adjacent to a tungsten-enriched amorphous interfacial layer regardless of aging conditions. IMC formation in all samples indicated that Co(W,P) is essentially a sacrificial barrier to SnBi solder. However, amorphous Co(W,P) might also exhibit stuffed-type barrier behavior due to its relatively high phosphorus (P) content. Analytical results indicated that the P content in Co(W,P) is a crucial factor affecting the structural evolution at the SnBi/electroless Co(W,P) interface.