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Subject: search.filters.subject.load-pull measurement

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    Hot-carrier effects on power characteristics of SiGeHBTs
    (2004-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
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    Tseng, HC
    ;
    Hsu, TL
    This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations.
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    Item type:Item,
    Impact of hot carrier stress on RF power characteristics of MOSFETs
    (2005)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Yang, DY
    ;
    Chang, CY
    This paper investigates hot-carrier (HQ effects on the RF power and linearity characteristics of MOS transistors using load-pull measurement. We found that the RF power characteristics are affected by the HC stress, and the linearity of MOS transistors is clearly degraded after HC stress at constant gate voltage measurement. However, at high gate voltage bias, the HC-induced power degradation is much reduced compared with that under low gate voltage regimes. In addition, HC effects on linearity can be softened by biasing the transistor at constant drain currents. These experimental observations can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility degradation coefficient under HC stress.