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Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions
(2019-01-01)
Chen, Yu-Chen
;
Hsieh, Pin-Hsien
;
Lin, Gray
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Monolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures
(1997-06-01)
Chen, SS
;
Lin, CC
;
Lan, WH
;
Tu, SL
;
Peng, CK
A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 --> 0)/AlyGa1-yAs (y = 0 --> 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance r(c) of 1.05 x 10(-7) Omega . cm(2) and an extrinsic transconductance g(me) of 272 mS/mm for devices with 1 mu m gate-length, microwave measurements shelved a current gain cut-off frequency f(t) of 22 GHz and a maximum oscillation frequency f(max) of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450 degrees C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.
Novel chirped multilayer quantum-dot lasers
(2008-01-01)
Lin, G.
;
Chang, C. Y.
;
Tseng, W. C.
;
Lee, C. P.
;
Lin, K. F.
Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks, respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low temperature below 200 K from our analysis.
Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
(2014-03)
Wu, Yue-Han
;
Wong, Yuen-Yee
;
Chen, Wei-Chun
;
Tsai, Dung-Sheng
;
Peng, Chun-Yen
Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality similar to 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.
Dual-wavelength mode-locking of novel chirped multilayer quantum-dot lasers
(2016)
Chiang, Chun-Ping
;
Lin, Gray
;
Chen, Yu-Chen
;
Cheng, Hsu-Chieh
;
電子工程學系及電子研究所
Monolithic passively mode-locked lasers are investigated based on chirped multilayer InAs/InGaAs QDs. Three chirped wavelengths, with stacking numbers of 2, 3 and 5 layers, are designed with capped InGaAs thickness of 4, 3 and 1 nm, respectively. The ridge-waveguide devices of 5-mu m width and 3-mm length are fabricated to have absorber-to-gain length ratio of 1:9. A curve tracer is used to analyze the hysteresis on the light-current curve. Two kinks in the L-I curve are observed at threshold current near 50 mA and at higher current of about 150 mA. The lasing wavelength just above threshold is centered at 1268 nm and the RF spectrum of mode-locking is peaked at 13.32 GHz. At well above threshold of 200 mA, another RF peak at 13.21 GHz occurs that corresponds to shorter lasing wavelength around 1233 nm. The two lasing wavelengths are originated from ground-state transitions of two groups of InAs/InGaAs QDs. Simultaneous dual-wavelength mode-locking is therefore achieved at rather low forward current and low reverse bias by incorporating this novel design of QD structure.
Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy
(2015-10-01)
Wu, Chia-Hsin
;
Yang, Chu-Shou
;
Wang, Yen-Chi
;
Huang, Hsi-Jung
;
Ho, Yen-Teng
In this study, hetero-epitaxy of GaSe epilayers on a c-sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high-energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15min of growth, and they were correlated with the m-axis and a-axis of hexagonal GaSe. The single crystal of GaSe was verified using X-ray diffraction and high-resolution cross-section transmission electron microscopy. The full width at half-maximum of (0002) in the XRD rocking-curve spectrum of GaSe epilayer is obtain around 207arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large-area epilayers.
Single-Crystalline Aluminum Nanostructures on a Semiconducting GaAs Substrate for Ultraviolet to Near-Infrared Plasmonics
(2015-04-01)
Liu, Hsuan-Wei
;
Lin, Fan-Cheng
;
Lin, Shi-Wei
;
Wu, Jau-Yang
;
Chou, Bo-Tsun
Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and is superior to noble metals in natural abundance, cost, and compatibility with modern semiconductor fabrication processes. Ultrasmooth single-crystalline metallic films are beneficial for the fabrication of high-definition plasmonic nanostructures, especially complex integrated nanocircuits. The absence of surface corrugation and crystal boundaries also guarantees superior optical properties and applications in nanolasers. Here, we present UV to near-infrared plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with a molecular beam epitaxy method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and nonlinear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance, and the nanoholes are found to support both photonic modes and localized surface plasmon resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such a counterintuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on a high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices.
新穎材料開發關鍵核心設施計畫---二六族化合物半磁性半導體磊晶核心設施
(2009)
周武清
;
CHOU WU-CHING
;
國立交通大學電子物理學系(所)
我們計畫建立一套二六族半磁性半導體的分子束磊晶系統核心設施，將包括碲、硒、錳、鋅及鎘等元素，及氮與二氯化鋅做正負型參雜。所以可以製作(碲化錳鋅/硒化鋅)量子點、(硒化錳鎘/硒化鋅)量子點、(碲化錳鎘/碲化鋅)量子點、(硒化鋅/硒化錳鋅/硒化鋅)三明治結構製作的自旋過濾器等。另外也考慮加氧研究氧化錳鋅相關的量子結構。除了提供各式各樣的樣品給國內外物理學家研究新穎的自旋物理外，本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究。
新穎材料開發計畫---二六族半磁性半導體磊晶核心設施之運作與新穎物理研究
(2010)
周武清
;
CHOU WU-CHING
;
國立交通大學電子物理學系（所）
以電漿輔助分子束磊晶技術成長各式各樣的二六族半磁性半導體量子結構，提供給國內外物理學家研究新穎的自旋與光電物理外，本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究，並且研究單一量子點於耦合微共振腔中之量子同調操控。
富銦之氮化鋁銦薄膜成長與性質
(2010)
張立
;
CHANG LI
;
國立交通大學材料科學與工程學系（所）
AlInN 是新興之氮化物半導體材料，富銦之AlxIn1-xN(x<0.4)之能隙小於2eV，可成為新世代太陽能電池之材料之一。本計劃擬以電漿輔助有機金屬分子束磊晶法(MOMBE)沉積高品質Al0.4In0.6N 磊晶薄膜於在(0001)sapphire、(0001)GaN/sapphire、Si(110)、YSZ(111) [yttria-stabilized zirconia]四種基板，並經由X 光繞射、電子顯微鏡等材料分析了解薄膜之微觀結構及成長機制，並測量其光電性質，探討其跟微觀結構之關係。最後，根據薄膜結構與特性，評估應用於太陽能電池之潛力。

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