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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.molybdenum

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Now showing 1 - 9 of 9
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    Phase transition behaviors of Mo- and nitrogen-doped Ge2Sb2Te5 thin films investigated by in situ electrical measurements
    (2009-08-01)
    Huang, Yu-Jen
    ;
    Chen, Yen-Chou
    ;
    Hsieh, Tsung-Eong
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    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Phase-change behaviors of Ge2Sb2Te5 (GST) thin films doped with molybdenum (Mo) or nitrogen (N) were investigated by utilizing in situ electrical property measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy. It was found that the Mo doping mainly reduces the resistivity level of amorphous GST while the N-doping raises both the resistivity levels of amorphous and crystalline GSTs. XRD and TEM analyses revealed that the element doping stabilizes the amorphous state of GST and suppresses the grain growth in GST films. This resulted in the increase in recrystallization temperature (T-m) and activation energy (E-a) of amorphous-to-crystalline phase transition in GST layers, as revealed by the calculation in terms of Kissinger's theory. The results of data fitting into various percolation models and Johnson-Mehl-Avrami analysis indicated the heterogeneous feature of phase transition process in GST layers that the nucleation first occurs at the atmosphere/sample interface and the recrystallization front advances into the interior of sample in a layer-by-layer manner along the direction of surface normal.
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    Reactions of Metal-Metal Quintuple Bonds with Alkynes: [2+2+2] and [2+2] Cycloadditions
    (2012)
    Chen, Hong-Zhang
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    Liu, Shih-Cheng
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    Yen, Chun-Hsu
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    Yu, Jen-Shiang K.
    ;
    Shieh, Yun-Jen
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    An Electron-Rich Molybdenum-Molybdenum Quintuple Bond Spanned by One Lithium Atom
    (2012)
    Liu, Shin-Cheng
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    Ke, Wei-Lun
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    Yu, Jen-Shiang K.
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    Kuo, Ting-Shen
    ;
    Tsai, Yi-Chou
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    Novel dual-metal gate technology using Mo-MoSix combination
    (2006-06-01)
    Li, TL
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    Ho, WL
    ;
    Chen, HB
    ;
    Wang, HCH
    ;
    Chang, CY
    A novel dual-metal gate technology that uses a combination of Mo-MoSix gate electrodes is proposed. An amorphous-Si/Mo stack was fabricated as a gate electrode for the n-channel device. It was thermally annealed to form MoSix. Pure Mo served as the gate electrode for the p-channel device. The work functions of MoSix and pure Mo gates on SiO2 are 4.38 and 4.94 eV, respectively, which are appropriate for devices with advanced transistor structures. The small increase in the work function (< 20 meV) and the negligible equivalent oxide thickness variation (< 0.08 nm) after rapid thermal annealing at 950 degrees C for 30 s also demonstrate the excellent thermal stabilities of Mo and MoSix on SiO2. Additional arsenic ion implantation prior to silicidation was demonstrated further to lower the work function of MoSix to 4.07 eV. This approach for modulating the work function makes the proposed combination of Mo-MoSix gate electrodes appropriate for conventional bulk devices. The developed dual-metal-gate technology on HfO2 gate dielectric was also evaluated. The effective work functions of pure Mo and undoped MoSix gates on HfO2 are 4.89 and 4.34 eV, respectively. A considerable work-function shift was observed on the high-k. gate dielectric. The effect of arsenic preimplantation upon the work function of the metal silicide on HfO2 was also demonstrated, even though the range of modulation was a little reduced.
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    Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes
    (2008-05-01)
    Kao, Chia-Chun
    ;
    Lin, Pang
    ;
    Shen, Yu-Yuan
    ;
    Yan, Jing-Yi
    ;
    Ho, Jia-Chong
    The synthesis, single-crystal structures, and device performance of novel naphthalene-diimide are described. The crystal structure has revealed the importance of a withdrawing group on solid-state packing. Metal molybdenum use as source/drain (S/D) electrodes can improve the performance of the bottom-contact device. The bottom-contact device based on a material of N,N'-bis (4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide has a high mobility of 3.58 x 10(-2) cm(2) V-1 s(-1), a threshold voltage of 1.3 V, and an on/off current ratio of 5.2 x 10(5). (c) 2008 Published by Elsevier B.V.
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    Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
    (2008-12-01)
    Lin, Chao-Cheng
    ;
    Chang, Ting-
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
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    Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
    (2009)
    Lin, Chao-Cheng
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Feng, Li-Wen
    An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
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    Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
    (2009)
    Lin, Chao-Cheng
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    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
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    Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
    (2009-02-09)
    Lin, Chao-Cheng
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.