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Subject: search.filters.subject.multiferroic

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Now showing 1 - 6 of 6
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    Exploring Topological Defects in Epitaxial BiFeO3 Thin Films
    (2011-02-01)
    Vasudevan, Rama K.
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    Chen, Yi-Chun
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    Tai, Hsiang-Hua
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    Balke, Nina
    ;
    Wu, Pingping
    Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO3. The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed.
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    Tailoring Magnetoelectric Coupling in BiFeO3/La0.7Sr0.3MnO3 Heterostructure through the Interface Engineering
    (2019-03-15)
    Yi, Di
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    Yu, Pu
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    Chen, Yi-Chun
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    Lee, Hsin-Hua
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    He, Qing
    Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
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    A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si
    (2017-09-01)
    Chen, Deyang
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    Nelson, Christopher T.
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    Zhu, Xiaohong
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    Serrao, Claudy R.
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    Clarkson, James D.
    A strain-driven orthorhombic (O) to rhombohedral (R) phase transition is reported in La-doped BiFeO3 thin films on silicon substrates. Biaxial compressive epitaxial strain is found to stabilize the rhombohedral phase at La concentrations beyond the morphotropic phase boundary (MPB). By tailoring the residual strain with film thickness, we demonstrate a mixed O/R phase structure consisting of O phase domains measuring tens of nanometers wide within a predominant R phase matrix. A combination of piezoresponse force microscopy (PFM), transmission electron microscopy (TEM), polarization electric field hysteresis loop (P-E loop), and polarization maps reveal that the O-R structural change is an antiferroelectric to ferroelectric (AFE-FE) phase transition. Using scanning transmission electron microscopy (STEM), an atomically sharp O/R MPB is observed. Moreover, X-ray absorption spectra (XAS) and X-ray linear dichroism (XLD) measurements reveal a change in the antiferromagnetic axis orientation from out of plane (R-phaSe) to in plane (O-p hase). These findings provide direct evidence of spin-charge-lattice coupling in La-doped BiFeO3 thin films. Furthermore, this study opens a new pathway to drive the AFE-FE O-R phase transition and provides a route to study the O/R MPB in these films.
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    BiFeO3 Thin Films: A Playground for Exploring Electric-Field Control of Multifunctionalities
    (2015-01-01)
    Yang, Jan-Chi
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    He, Qing
    ;
    Yu, Pu
    ;
    Chu, Ying-Hao
    ;
    材料科學與工程學系
    A promising approach to the next generation of low-power, functional, and green nanoelectronics relies on advances in the electric-field control of lattice, charge, orbital, and spin degrees of freedom in novel materials. The possibility of electric-field control of these multiple materials functionalities offers interesting options across a range of modern technologies, including information communication, computing processes, data storage, active components, and functional electronics. This article reviews electric-field control and modulation of various degrees of freedom through the medium of multiferroic BiFeO3. Coexisting order parameters and inherent couplings in this materials system form a potent playground, enabling direct and indirect manipulation to obtain intriguing properties and functionalities with an electric stimulus. An in-depth understanding of those electrically controlled phenomena and breakthroughs is highlighted, paving a new route toward multifunctional nanoelectronics. This article concludes with a brief discussion on foreseeable challenges as well as future directions.
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    Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces
    (2013-09-14)
    Huijben, M.
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    Yu, P.
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    Martin, L. W.
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    Molegraaf, H. J. A.
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    Chu, Y. -H.
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    Electrical Control of Multiferroic Orderings in Mixed-Phase BiFeO3 Films
    (2012-06-12)
    Chen, Yi-Chun
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    He, Qing
    ;
    Chu, Feng-Nan
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    Huang, Yen-Chin
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    Chen, Jhih-Wei