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Now showing 1 - 6 of 6
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    Giant Resistivity Change of Transparent ZnO/Muscovite Heteroepitaxy
    (2020-05-13)
    Yen, Min
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    Lai, Yu-Hong
    ;
    Zhang, Chun-Li
    ;
    Cheng, Hou-Yung
    ;
    Hsieh, Yi-Ting
    The piezoresistive effect has shown a remarkable potential for mechanical sensor applications and been sought for its excellent performance. A great attention was paid to the giant piezoresistive effect and sensitivity delivered by silicon-based nanostructures. However, low thermal stability and complicated fabrication process hinder their practical applications. To overcome these issues and enhance the functionalities, we envision the substantial piezopotential in a zinc oxide (ZnO)/muscovite (mica) heteroepitaxy system based on theoretical consideration and realize it in practice. High piezoresistive effect with giant change of resistivity (-80 to 240%) and large gauge factor (>1000) are demonstrated through mechanical bending. The detailed features of heteroepitaxy, electrical transport, and strain are probed to understand the mechanism of such a giant resistivity change. In addition, a bending model is established to reveal the distribution of strain. Finally, we demonstrate a flex sensor featuring high sensitivity, optical transparency, and two-segment sensing with a great potential toward practical applications. Such an oxide heteroepitaxy exhibits excellent piezoresistive properties and mechanical flexibility. In the near future, the importance of flex sensors will emerge because of the precise control in the automation industries, and our results lead to a new design in the field of flex sensors.
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    Epitaxial Yttria-Stabilized Zirconia on Muscovite for Flexible Transparent Ionic Conductors
    (2018-12-01)
    Wu, Ping-Chun
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    Lin, Yu-Pin
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    Juan, Yung-Hsiang
    ;
    Wang, Yao-Ming
    ;
    Do Thi-Hien
    The advantages of ionic conductors have attracted great interest worldwide because they can fit the requirements that standard electrical conductors struggle to meet. Yttria-stabilized zirconia (YSZ) is the most common ionic conductor for various practical applications. In this study, in order to bring ionic conductors into the field of soft technology, transparent YSZ films with superior mechanical flexibility were epitaxially grown on a muscovite substrate by pulsed-laser deposition. The epitaxial relationship between YSZ and muscovite has been well established, indicating a high-crystallinity thin film. The heterostructure of YSZ/muscovite exhibits excellent ionic conductivity with great mechanical flexibility. The smallest bending radius of this heterostructure that can be achieved is similar to 10 mm with excellent mechanical cyclabilty (>800 cycles) and stability (>10(5) s), serving as a new platform to fabricate highly flexible ionic conductors.
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    The Effect of Vapor Transport Annealing on FeSe Films Deposited on 2D Material
    (2020-01-01)
    Fitriyah, Nurul
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    Hong, Ten-Her
    ;
    Duy, Ha Thai
    ;
    Mi, Juinn-Wei
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    Hsiao, Yen-Fu
    Owing to its simple crystal structure, tetragonal FeSe has been considered as a perfect candidate for investigating the interplays among the superconductivity, magnetism and structural phase transition. Previous works had revealed that superconductivity could only be seen in samples with Se deficiency for the otherwise ferromagnetic tetragonal FeSe. In this study, we investigated the effect of vapor transport annealing on the crystalline quality of FeSe films deposited on flexible muscovite (mica) substrates by pulsed laser deposition. The annealing processes were conducted by sealing FeSe powder in tandem with the as-deposited FeSe films in a quartz tube. The FeSe powder was placed at a distance of about 18.5 cm from the FeSe films and the entire sealed quartz tube (about 1.2 cm in diameter) assembly was put into a Lindberg three-zone furnace and maintained a temperature gradient between the two ends of the quartz tube. The results showed that FeSe films successfully grown on flexible mica substrates and the annealing did improve the morphology and crystallinity of the films, however, the films appeared to have more inhomogeneous phases. We suspect that this might be due to uncompleted FeSe phase nucleation in non-optimum condition. The interface between the muscovite substrate and the FeSe films also could be the caused of the formation of other impurity phases, such as FeSe2 and Fe3Se4. Consequently, the obtained films exhibited only paramagnetic behaviors, and there was no sign of zero-resistance down to 2 K.
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    Heteroepitaxy of Co-Based Heusler Compound/Muscovite for Flexible Spintronics
    (2019-09-25)
    Chen, Yi-Cheng
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    Yen, Min
    ;
    Lai, Yu-Hong
    ;
    Markou, Anastasios
    ;
    Zhang, Liguo
    Materials with high spin-polarization play an important role in the development of spintronics. Co-based Heusler compounds are a promising candidate for practical applications because of their high Curie temperature and tunable half-metallicity. However, it is a challenge to integrate Heusler compounds into thin film heterostructures because of the lack of control on crystallinity and chemical disorder, critical factors of novel behaviors. Here, muscovite is introduced as a growth substrate to fabricate epitaxial Co2MnGa films with mechanical flexibility. The feature of heteroepitaxy is evidenced by the results of X-ray diffraction and transmission electron microscopy. Moreover, high chemical ordering with superior properties is delivered according to the observation of large Hall conductivity (680 Omega(-1) cm(-1)) and highly saturated magnetic moment (similar to 3.93 mu(B)/f.u.), matching well with bulk crystals. Furthermore, the excellence of magnetic and electrical properties is retained under the various mechanical bending conditions. Such a result suggests that the development of Co2MnGa/muscovite heteroepitaxy provides not only a pathway to the thin film heterostructure based on high-quality Heusler compounds but also a new aspect of spintronic applications on flexible substrates.
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    Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
    (2019-07-24)
    Tsai, Meng-Fu
    ;
    Jiang, Jie
    ;
    Shao, Pao-Wen
    ;
    Lai, Yu-Hong
    ;
    Chen, Jhih-Wei
    With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zro7Ti0.3)03 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.
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    Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics
    (2016-12-14)
    Wu, Ping-Chun
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    Chen, Ping-Fan
    ;
    Thi Hien Do
    ;
    Hsieh, Ying-Hui
    ;
    Ma, Chun-Hao
    Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe3O4 film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe3O4/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe3O4. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe3O4/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.