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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 10 of 17
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    A Single Spherical Assembly of Protein Amyloid Fibrils Formed by Laser Trapping
    (2017-06-06)
    Yuyama, Ken-ichi
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    Ueda, Mariko
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    Nagao, Satoshi
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    Hirota, Shun
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    Sugiyama, Teruki
    Protein amyloids have received much attention owing to their correlation with serious diseases and to their promising mechanical and optical properties as future materials. Amyloid formation has been conducted by tuning temperature and chemical conditions, so that its nucleation and the following growth are analyzed as ensemble dynamics. A single spherical assembly of amyloid fibrils of cytochrome c domain-swapped dimer was successfully generated upon laser trapping. The amyloid fibrillar structure was confirmed by fluorescence characterization and electron microscopy. The prepared spheres were further manipulated individually in solution to fabricate a three-dimensional microstructure and a line pattern. Amyloid formation dynamics and amyloid-based microstructure fabrication are demonstrated based on direct observation of a single spherical assembly, which foresees a new approach in amyloid studies.
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    Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions
    (2015-06-01)
    Chou, Yi-Chia
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    Tang, Wei
    ;
    Chiou, Chien-Jyun
    ;
    Chen, Kai
    ;
    Minor, Andrew M.
    Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.
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    Effect of diatomic islands on step morphological stability of a terrace edge in molecular beam epitaxy
    (1999-09-29)
    Lin, SP
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    Hwang, CC
    ;
    Chu, HS
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    機械工程學系
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    Department of Mechanical Engineering
    The effect of two-dimensional diatomic-island nucleation on the linear stability of the step morphology during molecular beam epitaxy is investigated numerically via shooting methods. It is found that the effect of diatomic islands on the step morphological stability is significant. The greater the effects of diatomic islands, the more stable the step morphology. increasing capture efficiency can decrease the critical surface capillary length and shift the critical wave number toward short-wavelength regimes. The unstable region is shrunk with increasing capture efficiency. Further, increasing flux coverage and/or surface coverage can decrease the critical surface capillary length and shift the critical wave number toward short-wavelength regimes. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Bias-enhanced nucleation of oriented diamonds on cone-like Si
    (2008-04-01)
    Chang, Li
    ;
    Yan, Jhih-Kun
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Uniform distribution of bias-enhanced nucleation of diamond has been improved on Si substrate of an area of 1 x 1 cm(2) by using a domeshaped Mo counter electrode in a microwave plasma chemical vapor deposition reactor. A nucleation density of 10(9) cm(2) can be reached within a few minutes when the bias voltage of - 100 V is applied on the substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that a single-crystalline diamond in a few nanometered size can be deposited on a volcano-shaped cubic SiC which is epitaxially formed on a Si cone. Examination reveals a large fraction of diamond nuclei are oriented along with one side of SiC on each Si cone. The Si cone formed on the Si substrate is due to plasma etching. The diamond nuclei have a shape close to rhombus in TEM. With further growth, secondary nucleation of diamond occurs on top of diamond nuclei and SiC which grows with Si cones. As a result, polycrystalline diamonds are deposited on each Si cone. (C) 2008 Elsevier B.V. All fights reserved.
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    Diamond nucleation on Cu by using MPCVD with a biasing pretreatment
    (2001-11-01)
    Chuang, KL
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    Chang, L
    ;
    Lu, CA
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    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Diamond growth onCoSi(2)/Si by bias-enhanced microwave plasma chemical vapor deposition method
    (2001-11-01)
    Chen, MR
    ;
    Chang, L
    ;
    Chang, DF
    ;
    Chen, HG
    ;
    材料科學與工程學系
    Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach similar to 10(9) cm(-2) with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Effect of TiN substrate plasma treatment on copper chemical vapor deposition
    (2004-05-01)
    Chang, CL
    ;
    Lin, CL
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    Chen, MC
    ;
    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    In this study, we investigated copper chemical vapor deposition (Cu CVD) on TiN substrates with respect to the effects of various plasma treatments. The Cu films deposited on the Ar-, H(2)-, and Ar+H(2)-plasma-treated TiN substrates all exhibit favorable properties over films deposited on the as-deposited TiN substrate. These include a smaller wetting angle of Cu nucleation and thus a smoother film surface, and an increased (111)-preferred orientation. However, the Cu films deposited on the plasma-treated substrates all exhibit a slightly higher resistivity, presumably due to a small grain size. With postdeposition thermal annealing at 400degreesC, the surface roughness of the Cu films and the Cu(111)/Cu(200) reflection ratio were both improved. We consider that a combined process including an Ar+H(2) plasma substrate treatment prior to Cu film deposition and a postdeposition thermal annealing is favorable for achieving a low surface roughness and high (111)-oriented Cu film deposition.
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    Highly oriented diamond growth on SixGe1-x (100) thin films
    (2004-11-01)
    Chang, TF
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    Chang, L
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Highly oriented (100) diamond films have been successfully grown on SixGe1-x(100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm(-1) peak which proves the formation of diamond. Diamond nucleation density on SixGe1-x substrate estimated by scanning electron microscopy is higher than 10(9) cm(-2). The interface between diamond and SixGe1-x substrate was characterized by transmission electron microscopy (TEM). About 20 nm decrease in thickness of the SixGe1-x film. was observed after bias enhanced nucleation step. TEM shows the existence of silicon carbide and heteroepitaxial diamond grains grown on SixGe1-x substrate. Characterization from high-resolution TEM on the specimen of short time deposition reveals that a number of epitaxial diamond grains were directly nucleated on SixGe1-x with {111} interplanar spacing ratio of diamond and SixGe1-x of 2:3. The diamond nucleation is found to be preferred on the ridge position of the rough substrate surface. Diamond {100} facets were quickly developed in the early stage of growth. (C) 2004 Elsevier B.V. All rights reserved.
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    Nanoparticles of Pb-Bi eutectic nucleation and growth on alumina template
    (2004-12-01)
    Chen, CC
    ;
    Kuo, CG
    ;
    Chen, JH
    ;
    Chao, CG
    ;
    材料科學與工程學系
    A novel and convenient method of thermo-immersion was used to fabricate of a large of lead-bismuth (Pb-Bi) eutectic nanoparticles on an uniform size anodic aluminum oxide (AAO) template. The AAO with a 60 nm pore diameter was used as a template for nanoparticles nucleation and growth. Both Pb-Bi and AAO were placed in a glass tube in vacuum at 10(-6) Torr, controlled by a molecular turbo pump then heated up to the melting point of the alloy. Nanoparticles nucleated and grew on the AAO template when the molten Pb-Bi solidified. The nanoparticles nucleated on the pore corners of the AAO template initially, grew simultaneously and assembled into a big nanoparticle on top of the AAO template later. Additionally, the size diameters of the initial nanoparticles were approximately 15 nm on the pore corners of the AAO template, and 80 nm when the initial nanoparticles formed a large nanoparticle. Latent heat was released when the molten Pb-Bi solidified to form nanoparticles. The size diameters distribution of nanoparticles was observed by scanning electron microscopy (SEM) such that, the diameters of the nanoparticles were 80 nm on top of the AAO template, and 200 nm in depths of the concave.
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    Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
    (2014-07-01)
    Chang, Li-Chuan
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    Chen, Yu-An
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    Kuo, Cheng-Huang
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    照明與能源光電研究所
    ;
    Institute of Lighting and Energy Photonics
    In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ratio patterned sapphire substrate (HARPSS). The crystal quality of the GaN epitaxial layer prepared on HARPSS with a PVD AlN nucleation layer was significantly better than that with a conventional metal organic chemical vapor deposition (MOCVD)-grown AlN nucleation layer. In addition, the pure wurzite structure GaN prepared on HARPSS could be obtained using PVD AlN nucleation layer. With the PVD AlN nucleation layer, the 20-mA LED light output power of the LEDs can be enhanced by 47.7% compared with the LEDs with the conventional MOCVD-grown AlN nucleation layer.