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Now showing 1 - 10 of 14
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    Item type:Item,
    A simple passive-alignment packaging technique for laser diode modules
    (1998-10-01)
    Wang, SC
    ;
    Chi, S
    ;
    Cheng, WH
    ;
    光電工程研究所
    ;
    Institute of EO Enginerring
    A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Fabrication and study of a shallow-gap Pirani vacuum sensor with a linearly measurable atmospheric pressure range
    (1999-01-01)
    Chou, BCS
    ;
    Chen, CN
    ;
    Shie, JS
    ;
    光電工程研究所
    ;
    Institute of EO Enginerring
    A Pirani vacuum sensor with a shallow gap between its heated element and its surrounding substrate heat-sink was fabricated using polysilicon as a sacrificial layer. The polysilicon was post-etched by TMAH solution, and an anti-stiction method was used in several steps of the process including a crucial freeze-drying one. The smallest spacing in this device is 0.3 mu m, and via this narrow gap, the heat conductance from the gas-molecule-collisions from the hot element to the heat sink is greatly enhanced in the atmospheric pressure regime. Therefore, this Pirani vacuum sensor is capable of detecting gas pressure linearly up to around 7 bars. As for the low-pressure regime, a partial dummy compensation method reduces the ambient temperature drift effectively and pressure lower than 10(-3) Torr was measurable. Moreover, device packaging was also studied to protect the tiny sensor from any contamination including dust and particles.
  • Thumbnail Image
    Item type:Item,
    INTEGRATED CMOS MEMS LIQUID CAPACITIVE INCLINOMETER
    (2015)
    Chiu, Yi
    ;
    Chen, Bo-Ting
    ;
    Hong, Hao-Chao
    ;
    電機學院
    ;
    College of Electrical and Computer Engineering
    This paper reports a miniaturized CMOS MEMS capacitive inclinometer with dielectric liquid sensing medium in the reservoir on top of the CMOS substrate. A DFR/glass cap is bonded to the CMOS chip to form a reservoir for the sensing liquid. Rotating/tilting the sensor changes the electrode area covered by the liquid and leads to a change of capacitance. The packaged sensor had a dimension of 2.4x2.4x1.2 mm(3). Experimental results obtained by the on-chip readout circuit showed the proposed inclinometer had a sensitivity of 0.48 mV/deg in the linear range between +/- 60 degrees. With proper calibration, the linear range can be extended to +/- 90 degrees.
  • Thumbnail Image
    Item type:Item,
    Design of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to V-Band Frequencies With Excellent Reliability
    (2010-08-01)
    Hsu, Li-Han
    ;
    Wu, Wei-Cheng
    ;
    Chang, Edward Yi
    ;
    Zirath, Herbert
    ;
    Hu, Yin-Chu
    This study demonstrates a flip-chip interconnect with epoxy-based underfill (epsilon(r) = 3.5 and tan delta = 0.02 at 10 MHz) for packaging applications up to V-band frequencies. To achieve the best interconnect performance, both the matching designs on GaAs chip and Al(2)O(3) substrate were adopted with the underfill effects taken into consideration. The optimized flip-chip interconnect showed excellent performance from dc to 67 GHz with return loss below -20 dB and insertion loss less than 0.6 dB. Furthermore, the dielectric loss induced by the underfill was extracted from measurement and compared with the simulation results. The reliability tests including 85 degrees C/85 % relative humidity test, thermal cycling test, and shear force test were performed. For the first time, the S-parameters measurement was performed to check the flip-chip reliability, and no performance decay was observed after 1000 thermal cycles. Moreover, the mechanical strength was improved about 12 times after the underfill was applied. The results show that the proposed flip-chip architecture has excellent reliability and can be applied for commercial applications.
  • Thumbnail Image
    Item type:Item,
    A simple passive-alignment packaging technique for laser diode modules
    (1998-10-01)
    Wang, SC
    ;
    Chi, S
    ;
    Cheng, WH
    ;
    光電工程學系
    ;
    Department of Photonics
    A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Fabrication and study of a shallow-gap Pirani vacuum sensor with a linearly measurable atmospheric pressure range
    (1999-01-01)
    Chou, BCS
    ;
    Chen, CN
    ;
    Shie, JS
    ;
    光電工程學系
    ;
    Department of Photonics
    A Pirani vacuum sensor with a shallow gap between its heated element and its surrounding substrate heat-sink was fabricated using polysilicon as a sacrificial layer. The polysilicon was post-etched by TMAH solution, and an anti-stiction method was used in several steps of the process including a crucial freeze-drying one. The smallest spacing in this device is 0.3 mu m, and via this narrow gap, the heat conductance from the gas-molecule-collisions from the hot element to the heat sink is greatly enhanced in the atmospheric pressure regime. Therefore, this Pirani vacuum sensor is capable of detecting gas pressure linearly up to around 7 bars. As for the low-pressure regime, a partial dummy compensation method reduces the ambient temperature drift effectively and pressure lower than 10(-3) Torr was measurable. Moreover, device packaging was also studied to protect the tiny sensor from any contamination including dust and particles.
  • Thumbnail Image
    Item type:Item,
    Improving the Angular Color Uniformity of Hybrid Phosphor Structures in White Light-Emitting Diodes
    (2013-10-01)
    Chen, Kuo-Ju
    ;
    Han, Hau-Vei
    ;
    Lin, Bing-Cheng
    ;
    Chen, Hsin-Chu
    ;
    Shih, Min-Hsiung
    This letter examines a hybrid phosphor structure for white light-emitting diodes. The hybrid phosphor structure produces more efficient luminosity and more uniform angular correlated color temperature (CCT) than the conventional dispensing method. The experimental results show that the CCT deviation improved from 453 to 280 K between -70 degrees and 70 degrees. This was likely caused by the large blue light divergent angle. The lumen output produced was higher than that produced by dispense and conformal phosphor structures. Therefore, the results show that the hybrid phosphor structure can be used in solid-state lighting.
  • Thumbnail Image
    Item type:Item,
    Enhanced Luminous Efficiency of WLEDs Using a Dual-Layer Structure of the Remote Phosphor Package
    (2013-06-15)
    Chen, Kuo-Ju
    ;
    Chen, Hsin-Chu
    ;
    Shih, Min-Hsiung
    ;
    Wang, Chao-Hsun
    ;
    Tsai, Hsin-Han
    This study demonstrates how the insertion of a thin silicone layer into a dual-layer remote phosphor structure enhances light extraction in white light-emitting diodes (WLEDs). In the experiment, a dual-layer phosphor structure yielded a higher intensity of blue and yellow components than a conventional structure. Moreover, the lumen flux was 5% higher than a conventional remote phosphor package at the same correlated color temperature (CCT). Using a TFCalc32 simulation, the electric field intensity was calculated for different thicknesses of the dual-layer remote phosphor structures, and the enhanced use of blue rays was verified. Additionally, the dual-layer structure reduces chromaticity deviations as the driving current increases.
  • Thumbnail Image
    Item type:Item,
    Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz
    (2012-03-01)
    Hsu, Li-Han
    ;
    Oh, Chee-Way
    ;
    Wu, Wei-Cheng
    ;
    Chang, Edward Yi
    ;
    Zirath, Herbert
    This paper presents a flip-chip-on-board (FCOB) packaging technology using a Rogers RO3210 laminate for microwave applications. Compared to the conventional microwave packaging architecture, the proposed FCOB technology skips one level of the ceramic package and thus results in lower reflections and manufacturing costs. To fulfill the small dimension requirement on printed circuit boards, the coplanar waveguide (CPW) transmission line and flip-chip bump were fabricated on a high-k RO3210 board (epsilon(r) = 10.2) with photolithography and electroplating. The GaAs chip patterned with the CPW line was then flip-chip-mounted onto the RO3210 laminate board. This structure displayed excellent performance from dc to 50 GHz with a return loss S-11 greater than 18 dB and insertion loss S-21 less than 0.5 dB. Meanwhile, the flip-chip bonding of the in-house-fabricated In0.52Al0.As-48/In0.6Ga0.4As metamorphic high-electron-mobility transistor devices on RO3210 also displayed excellent gain performance with a small degradation of 1 dB from dc to 40 GHz, showing the potential of implementing microwave integrated circuits on RO3210. To enhance the mechanical reliability, an epoxy-based underfill was injected into the flip-chip assemblies. Thermal cycling tests were performed to test the interconnect reliability, and the results indicated that the samples passed the thermal cycling test at least up to 600 cycles, showing excellent reliability for commercial applications. To the best of the authors' knowledge, this is the first study that evaluates the use of the RO3210 laminate for microwave flip-chip in open literature.
  • Thumbnail Image
    Item type:Item,
    Study of electromigration in eutectic SnPb solder stripes using the edge displacement method
    (2006-08-01)
    Chou, C. K.
    ;
    Hsu, Y. C.
    ;
    Chen, Chih
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Electromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60 degrees to 140 degrees C. The measured drift velocity was found to be 0.3 A/sec when the solder stripe was stressed under 4.9 x 104 A/cm(2) at 80 degrees C, and it increased as the current density or the temperature increased. The products of DZ* at 60 degrees C, 80 degrees C, 100 degrees C, 120 degrees C, and 140 degrees C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60-100 degrees C and 0.55 eV at the temperature range 100-140 degrees C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints.