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ZrN-Based Flexible Resistive Switching Memory
(2020-05-01)
Kumar, Dayanand
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Chand, Umesh
;
Siang, Lew Wen
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (10(7)), a rapid speed (45 ns) and stable retention (10(4) s) at 100 degrees C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.
Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
(2020-03-01)
Majumdar, Swatilekha
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Chen, Ying
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Hudec, Boris
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Hou, Tuo-Hung
;
Suri, Manan
In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO sigma /Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.
Improving linearity by introducing Al in HfO2 as a memristor synapse device
(2019-11-01)
Chandrasekaran, Sridhar
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Simanjuntak, Firman Mangasa
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Saminathan, R.
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Panda, Debashis
;
Tseng, Tseung-Yuen
Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.
Recommended Methods to Study Resistive Switching Devices
(2019-01-01)
Lanza, Mario
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Wong, H-S Philip
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Pop, Eric
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Ielmini, Daniele
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Strukov, Dimitri
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.
A Nanostructuring Method to Decouple Electrical and Thermal Transport through the Formation of Electrically Triggered Conductive Nanofilaments
(2018-07-12)
Retamal, Jose Ramon Duran
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Kang, Chen-Fang
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Lien, Der-Hsien
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Kuo, Wei-Cheng
;
Juang, Zhen-Yu
Transforming thermal energy into electric energy and vice versa needs the decoupling of electrical transport from thermal transport. An innovative strategy is proposed by forming/disrupting electrically triggered conductive nanofilaments within semiconducting thin films to switch thermoelectric properties between two states without further material modification and manufacturing processes. It can also controllably adjust the degree of decoupling, providing a potential resolution and performance adjustability for heat/coldness control or power consumption reduction on demand.
Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications
(2011-10-01)
Huang, Jiun-Jia
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Tseng, Yi-Ming
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Hsu, Chung-Wei
;
Hou, Tuo-Hung
;
電子工程學系及電子研究所
A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO2 barriers. The series connection with an HfO2-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
(2019-03-01)
Kumar, Dayanand
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Aluguri, Rakesh
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Chand, Umesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
A bipolar, highly nonlinear n-p-n selector is coupled in series with resistive switching memory device to suppress the sneak path current. The memory characteristics are measured for the crossbar array fabricated on a flexible polyethylene terephthalate substrate. Dominant conduction mechanism is the Zener tunneling to obtain the high nonlinearity in the selector device. This phenomenon validates the I-V characteristics which are temperature dependent, which leads to decrease in the turn-on voltage of the device as the temperature increases. The proposed one bipolar selector-one resistor device demonstrates better memory characteristics with the high nonlinearity (similar to 10(3)), observable memory window of about one order, excellent ac endurance (10(7)) cycles, fast switching speed (60 ns), and stable retention (10(4) s) at 100 degrees C. The results show the substantial potential of the proposedone selector-one-resistor structure in suppressing the leakage current, making it attractive for future high-density flexible crossbar memory array.
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
(2011-08-01)
Wu, Ming-Chi
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Lin, Yi-Wei
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Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The Ti/ZrO2/Pt resistive memory devices with one transistor and one resistor (1T1R) architecture are successfully fabricated in this letter. The tested devices show low operation current (20 mu A), low switching voltage (set/reset, 0.8/-1 V), and reliable data retention for low-resistance state (LRS) with a 20-mu A set current at 80 degrees C (over ten years) via an excellent current limiter, namely, a metal-oxide-semiconductor field-effect transistor (MOSFET). In addition, multilevel storage characteristics are also demonstrated by modulating the amplitude of the MOSFET gate voltage. The various LRS levels obtained are possibly attributed to the formation of different numbers and sizes of conducting filaments consisting of oxygen vacancies caused by an external electric field. Moreover, reproducible resistive switching characteristics up to 2000 switching cycles are achieved in the same device. Our 1T1R ZrO2-based resistive switching access memory with low-power and highly reliable multilevel operation has high potential for practical applications.
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
(2017-09-20)
Simanjuntak, Firman Mangasa
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Chandrasekaran, Sridhar
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Pattanayak, Bhaskar
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Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10(4) s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.
Switching characteristics in TiO2/ZnO double layer resistive switching memory device
(2017-06-01)
Jain, Praveen K.
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Salim, Mohammad
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Chand, Umesh
;
Periasamy, C.
;
電子工程學系及電子研究所
The uniform and reliable resistive switching characteristics of a ZnO based resistive random access memory device with a thin TiO2 layer are successfully investigated. In this study, the effect of thickness of the TiO2 layer on switching characteristics has been investigated. Compared with different thicknesses of the thin TiO2 layer, the remarkably improved resistive switching parameters such as lower forming voltage and the narrower variation of endurance are achieved for a TiO2 layer of thickness 2 nm. The forming voltages are dependent on the TiO2 thickness which supports the idea that forming process is governed by a dielectric breakdown-like phenomenon. The Ti/TiO2/ZnO/Pt device with the 2 nm TiO2 layer exhibits good DC endurance up to 10(3) cycles. The non-volatility of data storage is further confirmed by retention test measured at room temperature. It has been observed that both low resistance state and high resistance state do not exhibit any degradation for more than 10(4)s.

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