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Implementation of Digital Self-Interference Cancellation in LTE-based CCFD Transmission
(2017-01-01)
Chu, Jian-Ya
;
Liao, Yuan-Te
;
Hung, Chun-Yi
;
Hsu, Terng-Yin
;
資訊工程學系
In this paper, we propose a real-time and scalable digital cancellation algorithm to cancel the self-interference signal. We implement this algorithm in the FPGA of NI USRP-2953R platform by using LabVIEW to program it through the PCIe. At the end of this paper, we demonstrate the real-time video stream between two platforms at the central frequency 2.2GHz to 2.5GHz with 20MHz bandwidth in the LTE framework.
Developing a VM-based Hybrid DNS System with High Availability
(2013)
Chen, Chang-Sheng
;
Su, Chun-Hsien
;
資訊技術服務中心
;
Information Technology Services Center
In this paper, we proposed to develop a set of lowcost, virtual machine-based hybrid DNS scheme (i.e., a frontend + multiple backend systems) with a scalable capability to provide DNS services with high availability. In this study, we had built two use case diagrams, namely the frontend (i.e., load-balancer) and the backend (i.e., DNS resolving) subsystems, for modeling the overall system. Moreover, we had developed a two-phase DNS health checking algorithm and designed two testing cases to help implement and evaluate the system. For validating the hybrid scheme, we had deployed and run the proposed DNS system for more than 2 years on our campus network. Based on the collected statistics, we had ensured that the proposed DNS systems could offer the expected DNS services with load-sharing capability and high availability for serving daily DNS queries on a regular basis and run smoothly.
A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects
(2005)
Guo, JC
;
Tan, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new T-model is developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L(omega), Re(Z(in)(omega)), and Q(omega) proves the proposed T-model. Besides the broadband feature, scalability is justified by the good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20GHz can improve RF circuit simulation accuracy demanded by broadband design.
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2006)
Guo, J. C.
;
Tan, T. Y.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond resonance. A new scheme of RLC networks is deployed for spiral coils and substrate to account for 3D eddy current, substrate return path, and spiral coil to substrate coupling effects, etc. The 3D eddy current is identified as the key element essential to accurately simulate broadband characteristics. EM simulation using ADS momentum is conducted to predict the on-chip inductor performance corresponding to wide range of substrate resistivities (rho(Si)=0.05 similar to 1K Omega-cm). Three operation modes such as TEM, slow-wave, and eddy current are reproduced. The model parameters manifest themselves physics-base through relevant correlation with rho(Si) over three operation modes. The onset of slow-wave mode can be consistently explained by a key element (R-P) introduced in our model, which accounts for the conductor loss due to eddy current arising from magnetic field coupling through substrate return path. This broadband and scalable model is useful for RF circuit simulation. Besides, it can facilitate optimization design of on-chip inductors through physics-based model parameters relevant to varying substrate resistivities.
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2006-01-01)
Guo, J. C.
;
Tan, T. Y.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond resonance. A new scheme of RLC networks is deployed for spiral coils and substrate to account for 3D eddy current, substrate return path, and spiral coil to substrate coupling effects, etc. The 3D eddy current is identified as the key element essential to accurately simulate broadband characteristics. EAI simulation using ADS momentum is conducted to predict the on-chip inductor performance corresponding to wide range of substrate resistivities (rho(Si)=0.05 similar to 1K Omega-cm). Three operation modes such as TEM, slow-wave, and eddy current are reproduced. The model parameters manifest themselves physics-base through relevant correlation with psi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element (R-p) introduced in our model, which accounts for the conductor loss due to eddy current arising from magnetic field coupling through substrate return path. This broadband and scalable model is useful for RF circuit simulation. Besides, it can facilitate optimization design of on-chip inductors through physics-based model parameters relevant to varying substrate resistivities.
Broadband and scalable on-silicon-chip inductor model for varying substrate resistivities
(2006)
Guo, J. C.
;
Tan, T. Y.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors of various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies up to 20 GHz, even beyond resonance. A new scheme of RLC networks is deployed for spiral coils and substrate to account for 3D eddy current, substrate return path, and spiral coil to substrate coupling effects, etc. The 3D eddy current is identified as the key element essential to accurately simulate broadband characteristics. A key element (R(P)) introduced in our model can successfully accounts for the conductor loss due to eddy current arising from magnetic field coupling through substrate return path. This broadband and scalable model is useful for RF circuit simulation. Besides, it can facilitate on-chip inductor design and optimization through physics-based model parameters relevant to lossy substrate.
A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects
(2006-03-01)
Guo, JC
;
Tan, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L (omega), Re (Z(in), (omega)), and Q (omega) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.
A broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operations
(2007-08-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D fullwave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z(in)(omega)),and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q(max) by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f(m)(Q(max)).
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2007-11-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors with various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies of up to 20 GHz, even beyond resonance. A new scheme of resistance-inductance-capacitance networks is deployed for the spiral coils and substrate to account for 3-D eddy current, substrate return path, and spiral coil to substrate coupling effects. The 3-D eddy current is identified as the key element essential to accurately simulate the broadband characteristics. Electromagnetic simulation using the Advanced Design System momentum is conducted to predict the on-chip inductor performance corresponding to a wide range of substrate resistivities (rho(Si) = 0.05 - 1 k ohm center dot cm). Three operation modes such as transverse electromagnetic mode, slow-wave mode, and eddy current mode are reproduced. The model parameters manifest themselves as physics-based through relevant correlation with psi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element R-p introduced in our model, which accounts for the conductor loss due to an eddy current arising from magnetic field coupling through a substrate return path. This broadband and scalable model is useful for radio frequency circuit simulation. In addition, it can facilitate an optimum design of on-chip inductors through the physics-based model parameters relevant to varying substrate resistivities.
A Broadband and Scalable Lossy Substrate Model for RF Noise Simulation and Analysis in Nanoscale MOSFETs With Various Pad Structures
(2009-02-01)
Guo, Jyh-Chyurn
;
Tsai, Yi-Hsiu
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An enhanced lossy substrate model is developed with important features of broadband accuracy and scalability. The broadband accuracy is justified by a good match with open pad S-parameters measured up to 110 GHz and MOSFETs' S- and Y-parameters over 40 GHz. The proven model can accurately simulate four noise parameters (NF(min), R(n), Re(Y(opt)), and Im(Y(opt))) and power spectral density of current noises (S(id) and S(ig)). The scalability has been validated over nanoscale MOSFETs with different finger numbers and adopting various pad structures (lossy, normal, and small pads). This scalable lossy substrate model attributed to two substrate RLC networks under the pads and transmission lines (TMLs) can consistently predict the abnormally strong finger number dependence and nonlinear frequency dependence of noise figure (NF(min)) revealed in devices with lossy pads. The enhanced model is useful in guiding pad and TML layouts for effective reduction of extrinsic noises and low noise design. Using a normal pad structure, the NF(min) can be effectively suppressed to approach the intrinsic performance, which is nearly independent of finger numbers.

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