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Subject: search.filters.subject.surface treatment

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Now showing 1 - 10 of 10
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    Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
    (2005-01-01)
    Chen, CW
    ;
    Chien, CH
    ;
    Perng, TH
    ;
    Yang, MJ
    ;
    Liang, JS
    We have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH3 surface nitridation (NH3-annealed), and rapid thermal oxidation (RTO-treated), have on the electrical properties of HfO2 gate dielectrics. The NH3-annealed technique is superior to the others because the dielectric subject to NH3 surface nitridation possesses a tremendously reduced leakage current, the lowest equivalent oxide thickness (EOT),and a moderate, hysteresis width. In contrast, the RTO-treated preparation can only effectively reduce the leakage current by its resultant increased physical thickness and displays considerably severe hysteresis. We have also studied the dependence of hysteresis on the initial inversion bias (V-inv), temperature, and frequency for-all splits. The hysteresis width increases upon increasing the initial inversion bias and decreasing the temperature, but it is rather insensitive to the measuring frequency. In addition, our experimental results indicate that the hysteresis width depends exponentially on both the initial inversion bias and the temperature, and it can be described well by a general empirical relationship that has the form C(T) (.) exp(RvVinv,). Finally, the conduction currents through the dielectrics are probably dominated by trap-assisted tunneling (TAT) because the current densities display stronger temperature dependence at low voltage than they do at higher voltages. Based on the trap-assisted tunneling model, the corresponding parameters have been extracted and are presented.
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    Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
    (2010-01-01)
    Chang, Chih-Chieh
    ;
    Pan, Fu-Ming
    ;
    Chen, Ching-Wen
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    This study performs surface reduction treatments, including hydrogen plasma treatment and rapid thermal anneal (RTA) in hydrogen ambient, to reduce the nitrogen content in the surface layer of the TaNx ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly beta-TaNx, is formed on the PE-ALD TaNx thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated TaNx thin film significantly improves the adhesion of the TaNx film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated TaNx thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD TaNx thin film can sustain the thermal anneal at 600 degrees C, the one on the as-deposited TaNx thin film exhibits voiding even at a temperature as low as 400 degrees C.
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    Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
    (2011-06-01)
    Trinh, H. D.
    ;
    Brammertz, G.
    ;
    Chang, E. Y.
    ;
    Kuo, C. I.
    ;
    Lu, C. Y.
    Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al2O3 on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C-V characterization of Al2O3/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (< 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
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    The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
    (2010-07-26)
    Trinh, H. D.
    ;
    Chang, E. Y.
    ;
    Wu, P. W.
    ;
    Wong, Y. Y.
    ;
    Chang, C. T.
    The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
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    Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment
    (2016-09)
    Tsai, Ming-Li
    ;
    Ko, Jun-Yu
    ;
    Wang, Shin-Yuan
    ;
    Chien, Chao-Hsin
    ;
    電子工程學系及電子研究所
    We investigate p-type GaSb MOS capacitors with various HfO2 thicknesses grown using an atomic layer deposition. GaSb surfaces treated with ex-situ chemical solution and in situ remote hydrogen plasma are inspected. After a series of etching steps, the GaSb surfaces exhibit smooth topography, indicating that this combination of treatments is capable of realizing ultrathin dielectric deposition. After etching processes, the ultrathin (approximately 3 nm) HfO2 layer deposited successfully on GaSb exhibit high-permittivity (approximately 21) properties as well as equivalent oxide thickness (EOT) of 0.75 nm, which can be attributed to the flat surface. To the best of our knowledge, the EOT of GaSb capacitor prepared using the exploited approach is record low. Furthermore, we find that the interlayer present after hydrogen plasma treatment and forming gas annealing could efficiently passivate interface state density and achieve high C-V modulation. Compared with the benchmark of gate leakage current versus EOT, the electrical performance with low gate leakage current of the GaSb MOS capacitors demonstrates the high feasibility of the proposed treatments.
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    Influence of Surface State on Biochemical Sensing Using SiGe Nanowire
    (2015-06-01)
    Lai, Chiung-Hui
    ;
    Chang, Kow-Ming
    ;
    Chen, Yi-Ming
    ;
    Chen, Chu-Feng
    ;
    Kuo, Po-Shen
    Nanowires are extensively used to fabricate highly sensitive electrical sensors for detection of biological and chemical species. The hole mobility can be promoted by the increasing Ge fraction in SiGe, achieved by the oxidation-induced Ge condensation. However, oxidation increases the number of surface states, which brings the nonnegligible contribution in mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent to modify the surface of SiGe nanowires, then bonding to bio-linker, bis (3-sulfo-N-hydroxysuccinimide ester) sodium salt (BS3). Various methods have been proposed for increasing sensitivity of boron-doped SiGe nanowires, such as capping layer, surface treatment, and annealing temperature.
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    A Facile Surface Treatment Utilizing Binary Mixtures of Ammonium Salts and Polar Solvents for Multiply Enhancing Thermoelectric PEDOT: PSS Films
    (2014-12-01)
    Tsai, Tsung-Che
    ;
    Chen, Tsung-Han
    ;
    Chang, Hsiu-Cheng
    ;
    Chen, Chun-Hua
    ;
    Huang, Yi-Chia
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    Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
    (2013-08-01)
    Trinh, Hai-Dang
    ;
    Lin, Yueh-Chin
    ;
    Kuo, Chien-I
    ;
    Chang, Edward Yi
    ;
    Hong-Quan Nguyen
    The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.
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    Optical sensing of square lattice photonic crystal point-shifted nanocavity for protein adsorption detection
    (2010-05-24)
    Lu, Tsan-Wen
    ;
    Lin, Pin-Tso
    ;
    Sio, Kuan-Un
    ;
    Lee, Po-Tsung
    ;
    光電工程學系
    We propose a point-shifted D(0) nanocavity formed by locally modulating four central air holes in square lattice photonic crystal for optical sensing application. Three defect modes in this nanocavity, including monopole, whispering-gallery, and dipole modes, are identified in experiments. We also apply a chemical treatment on InGaAsP surface to form a 1-octadecanethiol linking monolayer, which enables the following protein adsorption. In experiments, the wavelength shifts of lasing modes in the D(0) nanocavity due to the protein adsorption are observed and agree with the simulation results. This can be a practical tool for label-free molecule detection in biomedical researches. (C) 2010 American Institute of Physics. [doi:10.1063/1.3436550]
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    Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
    (2007-09-01)
    Chen, Shih-Chang
    ;
    Chen, Yung-Yu
    ;
    Chang, Yu-Tzu
    ;
    Lou, Jen-Chung
    ;
    Kin, Kon-Tsu
    In this study, we improved the interfacial properties of high-kappa gate stacks with the surface treatment of ozonated water prior to deposition of hafnium oxide (HfO2). We demonstrated that the Ozone-oxide improved the electrical properties of the HfO2 gate stack interface in terms of its smoother interface, lower leakage current density, narrower hysteresis width, superior charge trapping effect, and reliability. From these experimental results, we believe that treatment with ozone is an efficient method for the preparation of high-quality interfaces between HfO2 and silicon surfaces.