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Chaotic behavior of hole mixing tunneling in asymmetric coupled quantum wells
(1997-02-01)
Juang, C
;
Tsai, CB
;
Juang, J
;
應用數學系
;
Department of Applied Mathematics
Coherent oscillatory motion of hole mixing tunneling in asymmetric coupled quantum well structures collapses if the heavy hole state in the first well is aligned with the light hole state in the second well under a significant in-plane vector k(parallel to). The tunneling probability obtained by the time-dependent Schrodinger operator with the Luttinger Hamiltonian in the oscillation collapse region is shown to be a chaotic time series using the simplex projection method. This effect is attributed to the nonlinear interaction of mixing tunnelings between HH to the LH state in the first well and HH to the LH state in the second well. (C) 1997 Elsevier Science Ltd.
Activation of Molecular Hydrogen by Arylcarbenes
(2018-12-12)
Mendez-Vega, Enrique
;
Maehara, Mika
;
Raut, Akshay Hemant
;
Mieres-Perez, Joel
;
Tsuge, Masashi
The hydrogenation reactions of diphenylcarbene 1, fluorenylidene 2, and dibenzocycloheptadienylidene 3 were investigated in solid H-2 and D-2 matrices and in H-2- and D-2-doped argon matrices at cryogenic temperatures. The reactivity of the carbenes towards H-2 increases in the order 1<3<2. Whereas 1 is stable in solid H-2, 2 and 3 react fast under the same conditions via quantum chemical tunneling. In D-2 both 1 and 3 are stable, whereas 2 slowly reacts. The different reactivity of the three carbenes is rationalized in terms of differing carbene stabilization energies.
Absorption enhancement in type-II coupled quantum rings due to existence of quasi-bound states
(2018-01-01)
Hsieh, Chi-Ti
;
Lin, Shih-Yen
;
Chang, Shu-Wei
;
光電工程學系
;
Department of Photonics
The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially separated electrons and holes. We model the bound-to-continuum absorption of type-II quantum rings (QRs) using a multiband source-radiation approach using the retarded Green function in the cylindrical coordinate system. The selection rules due to the circular symmetry for allowed transitions of absorption are utilized. The bound-to continuum absorptions of type-II GaSb coupled and uncoupled QRs embedded in GaAs matrix are compared here. The GaSb QRs act as energy barriers for electrons but potential wells for holes. For the coupled QR structure, the region sandwiched between two QRs forms a potential reservoir of quasi-bound electrons. Electrons in these states, though look like bound ones, would ultimately tunnel out of the reservoir through barriers. Multiband perfectly-matched layers are introduced to model the tunneling of quasi-bound states into open space. Resonance peaks are observed on the absorption spectra of type-II coupled QRs due to the formation of quasi-bound states in conduction bands, but no resonance exist in the uncoupled QR. The tunneling time of these metastable states can be extracted from the resonance and is in the order of ten femtoseconds. Absorption of coupled QRs is significantly enhanced as compared to that of uncoupled ones in certain spectral windows of interest. These features may improve the performance of photon detectors and photovoltaic devices based on type-II semiconductor nanostructures.
Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings
(2018-03-01)
Hsieh, Chi-Ti
;
Lin, Shih-Yen
;
Chang, Shu-Wei
;
光電工程學系
;
Department of Photonics
The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially indirect optical transitions. This phenomenon limits the application of type-II nanostructures in photon detections. In this paper, we show that with proper arrangements of conduction barriers, the formation of quasi-bound states can significantly boost up the absorption of type-II coupled quantum rings. Meanwhile, the rapid tunneling of electrons in these leaky states should make the corresponding external quantum efficiency comparable to that of single (uncoupled) rings. These featuresmay improve the performance of photon detectors based on type-II semiconductor nanostructures.
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
(2016-10-05)
Wang, Jingli
;
Yao, Qian
;
Huang, Chun-Wei
;
Zou, Xuming
;
Liao, Lei
High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
Spin-dependent delay time in electronic resonant tunneling at zero magnetic field
(2000)
Voskoboynikov, O
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The dependence of the phase tunneling time on electronic spin polarization in symmetric and asymmetric double-barrier semiconductor heterostructures is studied theoretically. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions are used for theoretical investigation of the electron spin influence on the delay time in tunneling processes. It is shown that the spin-orbit splitting in the dispersion relation for the electrons can provide a dependence of the delay time on the electron spin polarization without additional magnetic field. This dependence can be controlled by an external electric field and can be very pronounced for realistic double-barrier semiconductor heterostrctures. (C) 2000 Elsevier Science Ltd. All rights reserved.
Electron spin filtering in all-semiconductor tunneling structures
(2003-09-01)
Yu, L
;
Huang, HC
;
Voskoboynikov, O
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work we briefly review the present day perspectives for exploiting conventional nonmagnetic semiconductor nano-technology to design high speed spin-filter devices. In recent theoretical investigations a high spin polarization has been predicted for the ballistic tunneling current in semiconductor single- and double-barrier asymmetric tunnel structures of III-V semiconductors with strong Rashba spin-orbit coupling. We show in this paper that the polarization in the tunneling can probability be sufficiently increased for producing realistic single-barrier structures by including of the Dresselhaus term into consideration. (C) 2004 Published by Elsevier Ltd.
Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dots
(2004-09-20)
Li, YM
;
友訊交大聯合研發中心
;
D Link NCTU Joint Res Ctr
We investigate the transition energy of vertically stacked semiconductor quantum dots with a complete three-dimensional (3D) model in an external magnetic field. In this study, the model formulation includes: (1) the position-dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (2) the position-dependent effective mass Hamiltonian in parabolic approximation for holes, (3) the finite hard-wall confinement potential, and (4) the Ben Daniel-Duke boundary conditions. To solve the nonlinear problem, a nonlinear iterative method is implemented in our 3D nanostructure simulator. For multilayer small InAs/GaAs quantum dots, we find that the electron-hole transition energy is dominated by the number of stacked layers. The inter-distance d plays a crucial role in the tunable states of the quantum dots. Under zero magnetic field for a 10-layer QDs structure with d = 1.0 nm, there is about 30% variation in the electron ground state energy. Dependence of the magnetic field on the electron-hole transition energy is weakened when the number of stacked layers is increased. Our investigation is constructive in studying the magneto-optical phenomena and quantum optical structures. (C) 2004 Elsevier B.V. All rights reserved.
Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
(2011-01-01)
Lee, Wei-Han
;
Chen, Ming-Jer
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Currently, both the band-structure calculation and the mobility measurement are used to assess the electron piezo-effective-mass coefficients in strained nMOSFETs. In this paper, we present a new experimental method through a fitting of the strain-altered electron gate direct tunneling current. The core of this method lies in the sensitivity of the direct tunneling to the position of the subband level in the presence of the electron piezo-effective-mass coefficients. First, a correction-coefficient generating expression is systematically constructed to compensate for the error in the subband levels due to the use of a triangular potential approximation. Then, with the known deformation potential constants and uniaxially compressive stress in the channel as inputs, a strain quantum simulator is carried out. The resulting gate direct tunneling current is used to fit experimental data, thus leading to the values of the piezo-effective-mass coefficients associated with the twofold and fourfold valleys. The comparison of the extracted piezo-effective-mass coefficients to those published in the literature is made.
Tunneling IPv6 through NAT with Teredo mechanism
(2005)
Huang, SM
;
Wu, Q
;
Lin, YB
;
資訊工程學系
;
Department of Computer Science
Teredo is a service that enables hosts located behind one or more IPv4 NATs to obtain IPv6 connectivity by tunneling packets over IPv4 UDP Under the national IPv6 deployment project in Taiwan, we developed the first Linux-based Teredo service in 2003. In this paper we explain how IPv6 candidates located behind NATs can enlist the help of "Teredo servers" and "Teredo relays" to learn their "global addresses" and to obtain connectivity, and how clients, servers and relays can be organized in Teredo networks. We also describe in details our strategies for implementing Teredo server and Teredo relay under Linux, and show the performance of different Teredo implementations in public domain.

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