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dc.contributor.authorJang, Ling-Shengen_US
dc.contributor.authorLin, Guo-Huaen_US
dc.contributor.authorLin, Yi-Liangen_US
dc.contributor.authorHsu, Chih-Yuanen_US
dc.contributor.authorKan, Wai-Hongen_US
dc.contributor.authorChen, Chiun-Hsunen_US
dc.date.accessioned2014-12-08T15:12:59Z-
dc.date.available2014-12-08T15:12:59Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn1387-2176en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10544-007-9089-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/10019-
dc.description.abstractElectrowetting on dielectric (EWOD) moving fluid by surface tension effects offers some advantages, including simplicity of fabrication, control of minute volumes, rapid mixing, low cost and others. This work presents a numerical model using a commercial software, CFD-ACE+, and an EWOD system including a microfluidic device, a microprocessor, electric circuits, a LCD module, a keypad, a power supply and a power amplifier. The EWOD model based on a reduced form of the mass conservation and momentum equations is adopted to simulate the fluid dynamics of the droplets. The EWOD device consists of the 2 x 2 mm bottom electrodes (Au/Cr), a dielectric layer of 3,000 angstrom nitride, 500 angstrom Teflon and a piece of indium tin oxide (ITO)-coated glass as the top electrode. The complete EWOD phenomenon is elucidated by comparing simulation with the experimental data on droplet transportation, cutting and creation. In transportation testing, the speed of the droplet is 6 mm/s at 40 V-dc. In addition, the droplet division process takes 0.12 s at 60 V-dc in the current case. Finally, a 347 nl droplet is successfully created from an on-chip reservoir at 60 V-dc.en_US
dc.language.isoen_USen_US
dc.subjectmicrofluidicsen_US
dc.subjectelectrowettingen_US
dc.subjectEWODen_US
dc.subjectsurface tensionen_US
dc.titleSimulation and experimentation of a microfluidic device based on electrowetting on dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10544-007-9089-8en_US
dc.identifier.journalBIOMEDICAL MICRODEVICESen_US
dc.citation.volume9en_US
dc.citation.issue6en_US
dc.citation.spage777en_US
dc.citation.epage786en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000250462200001-
dc.citation.woscount10-
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