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dc.contributor.authorLee, TDen_US
dc.contributor.authorCheng, PHen_US
dc.contributor.authorPan, JSen_US
dc.contributor.authorTai, Ken_US
dc.contributor.authorLai, Yen_US
dc.contributor.authorLin, Wen_US
dc.date.accessioned2014-12-08T15:02:19Z-
dc.date.available2014-12-08T15:02:19Z-
dc.date.issued1996-10-01en_US
dc.identifier.issn0306-8919en_US
dc.identifier.urihttp://hdl.handle.net/11536/1001-
dc.description.abstractWe fabricate both microdisc and microring InGaAsP-InGaAs quantum well semiconductor lasers using an etching-and-bonding technique. Their emission properties are studied by optical pumping at 77 K. Single mode lasing is achieved for discs with a diameter of 5 mu m. Multimode emission is observed for rings with larger diameters. Both fundamental and higher order lasing modes are observed and are found to exhibit interesting emission characteristics.en_US
dc.language.isoen_USen_US
dc.titleMode emission characteristics of semiconductor microdisc and microring lasersen_US
dc.typeArticleen_US
dc.identifier.journalOPTICAL AND QUANTUM ELECTRONICSen_US
dc.citation.volume28en_US
dc.citation.issue10en_US
dc.citation.spage1335en_US
dc.citation.epage1341en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1996VM79500013-
dc.citation.woscount3-
顯示於類別:期刊論文