| 標題: | 在矽基板整合40奈米三五族與鍺量子井場效電晶體作為低功率與高速無線之應用(II) Integration of 40 nm III-V and Ge Quantum Well FETs on Si Substrate for Low-Power and High Speed Wireless Applications (II) |
| 作者: | 張翼 CHANG EDWARD YI 國立交通大學材料科學與工程學系（所） |
| 關鍵字: | 量子井場效電晶體;砷化銦;超低功率;數位邏輯;原子層氣相沉積;表面處理 |
| 公開日期: | 2010 |
| 官方說明文件#: | NSC99-2120-M009-005 |
| URI: | http://hdl.handle.net/11536/100259 https://www.grb.gov.tw/search/planDetail?id=2149157&docId=346002 |
| Appears in Collections: | Research Plans |
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