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dc.contributor.authorLu, Hau-Yanen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTai, Ya-Hsingen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChi, Sienen_US
dc.date.accessioned2014-12-08T15:13:02Z-
dc.date.available2014-12-08T15:13:02Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2007.900921en_US
dc.identifier.urihttp://hdl.handle.net/11536/10058-
dc.description.abstractA new pixel design and driving method for active-matrix organic light-emitting diode (AMOLED) display using low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) is proposed. The new circuit consists, of five TFTs and one capacitor to eliminate the variation in the threshold voltage of the TFTs, and the drop in the supply voltage in it single frame operation. The proposed pixel circuit has been verified to realize uniform output current by the simulation work using HSPICE software. The simulated error rate of the output current is also discussed in this paper. The novel pixel design has great potential for use in large size and high resolution AMOLED displays.en_US
dc.language.isoen_USen_US
dc.subjectactive-matrix organic light-emitting diode (AMOLED)en_US
dc.subjectcurrrent-resistance (I-R) dropen_US
dc.subjectpixel designen_US
dc.subjectpoly crystalline silicon thin-film transistors (poly-Si TFTs)en_US
dc.subjectuniformityen_US
dc.titleA new pixel circuit compensating for brightness variation in lagre size and high resolution AMOLED displaysen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JDT.2007.900921en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume3en_US
dc.citation.issue4en_US
dc.citation.spage398en_US
dc.citation.epage403en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000259064600009-
dc.citation.woscount12-
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