電阻式記憶元件操作特性與可靠性之統計測量及三度空間原子與電荷傳輸模擬

Full metadata record

DC Field	Value	Language
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:46:03Z	-
dc.date.available	2014-12-13T10:46:03Z	-
dc.date.issued	2014	en_US
dc.identifier.govdoc	NSC102-2221-E009-096-MY2	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/100602	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=8120674&docId=432384	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	電阻式記憶元件操作特性與可靠性之統計測量及三度空間原子與電荷傳輸模擬	zh_TW
dc.title	Statistical Characterization and 3D Atomistic Simulation Based on Electron Hopping and Thermo-Chemical Dielectric Breakdown in RRAM	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans